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증기상 Beckmann 전이 반응에 대한 Aluminophosphate 분자체의 촉매 특성
윤영삼,박판욱,권성헌,김병주 釜山大學校生産技術硏究所 1997 生産技術硏究所論文集 Vol.53 No.-
Molecular sieves인 AIPO₄-5, SAPO-5 그리고 SAPO-11을 수열합성하여 제조한 다음 XRD, SEM, NH₃TPD와 IR을 통해 물리화확적 특성을 조사하였다. 증기상에서 cyclohexanone oxime의 Beckmann 전이 반응 결과는 oxime의 전화율과 Lactam의 수율에 있어서 SAPO-11가 반응성이 우수하였고, WHSV의 변화에 있어서는 AIPO₄-5와 SAPO-5 경우 WHSV가 증가할수록 전화율과 선택도는 감소하였지만 SAPO-11는 선택도가 증가함을 보였다. 본 대상 반응계인 Beckmann 전이 반응에서는 촉매의 기공 크기보다는 산성도에 더 큰 영향을 받음을 알수 있었다. AIPO₄-5, SAPO-5 AND SAPO-11 which are molecular sieves were synthesized by hydrothermal crystallization. The crystallinity of the prepared catalysts was confirmed by XRD and SEM, and their acidic properties were examined by TPD of NH₃and IR. Catalytic characteristics of the catalysts were tested by vapor phase Beckmann rearrangement of cyclohexanone oxime to caprolactam. The conversion of lactam and yield of lactam increased with acidity of the catalyst. Among the tested catalysts, SAPO-11 was excellent in Beckmann rearrangement reaction. AIPO₄-5 and SAPO-5 showed that conversion of oxime and selectivity of lactam decreased with the increase of WHSV but SAPO-11 showed different tendency in selectivity of lactam, or selectivity of lactam increased with the increase of WHSV. Beckmann rearrangement reaction was affected by acidity than pore size.
Si-Schottky障壁型의 大陽電池 製作에 관한 硏究
李相潤,羅炳旭,朴德圭,李鍾德,金奎用,玄東杰,禹洪,盧景錫 慶北大學校 物理化學硏究所 1981 硏究論文集 Vol.1-2 No.-
The characteristics of these Si-schottky barrier type and Heterojunction type solar cells are as follows; 1. SnO_2/n-Si Heterojunction Solar Cells Fabricated by Spray Pyrolysis Method SnO_2 film were deposited on the (100) or (111) surface of Si single crystal by the spray pyrolysis method. The best SnO_2/n-Si solar cell has a good performance, with an open-circult voltage: Voc.=0.45V, short circuit current: Isc.=35.5㎃, fill factor: FF.=0.64, and conversion efficiency: η=10.2% under 98㎽/㎠ irradiation of AMl. The spray pyrolysis described in this paper is simple and suitable for mass production. One possibility for cost reduction lies in this method of junction fabrication, and the idea of simply deposited SnO_2/n-Si junction is, at first sight, very attractive. Hence the SnO_2/n-Si Solar Cell and the effectiveness of this method may be of great value in some future production of low-cost solar cells. 2. In_2O_3: Sn Heterojunction Solar Cells Fabricated by Spray Pyrolitic Method Highly conductive and transparent thin films of In_2O_3: Sn (ITO) are fabricated by spray pyrolytic method. The parameters of these thin films are as follows: resistivity ρ = 1.5×10 exp (-3) Ω·㎝, carrier concentration n = 7.5×10 exp (19) cm^-3, mobility μ = 55.5 ㎠/V·sec and transmission 85-90% over visible and long wave-length region. These thin films have simple cubic system with lattice constant 10.2Å. In_2O_3: Sn/n-Si heterojunction solar cells are fabricated, depositing In_2O_3: Sn (ITO) thin films on n-Si substrates with orientation(100) and resistively 2-3Ω, ㎝ by spray pyrolitic method. Under AMl sunlight simulator, the parameters of the excellent cell obtained has open-circuit voltage Voc=0.52V, short-circuit current I_sc=39.0㎃, fill factor: F.F=0.60 and conversion efficiencyη=12.1%. 3. Al/p-Si MOS Solar Cells Fabricated by Vacuum Evaporation Method Al/p-Si MOS solar cells, consisting of Al on P-tupe silicon with a thin interfacial layer of SiO_2 have been found to have good light conversion efficiency for solar radiation. The effects of the oxide layer thickness between metal and substrate were investigated. Under AMl simulated sunlight illumination the best cell has open circuit voltage Voc=0.50V, short-circuit current I_sc=26.3㎃/㎠, fill-factor FF=0.70 and conversion efficiency η=9.2%. 4. Cr-Cu/P-Si MOS Solar Cells Fabricated by Vacuum Evaporation Method Cr-Cu/p-Si MOS Solar cells, consisting of Cr-Cu on p-type silicon with a thin interfacial layer of SiO_2 have been found to have good light conversion efficiency for solar radiation. The effects of the oxide layer thickness between metal and substrate were investigated. Under AMl simulated sunlight illumination the best cell has open circuit voltage Voc=0.49V, short-circuit current I_sc=26.4㎃, fill-factor: FF=0.72 and conversion efficiency η=9.3%.
羅炳旭,李相潤,孫鍊圭,金東洛 慶北大學校 物理化學硏究所 1984 硏究論文集 Vol.5 No.-
Titanium thin film was deposited on the chemically etched (100) surface of silicon single crystal by the vacuum evaporation. The interfacial oxide was grown by ramp heating. The Ti/p-Si solar cells have shown good rectification properties with the 0.78V built-in potential and the 20㎂/㎠ reverse saturation current density in dark. The best cell have 0.58V open circuit voltage, 38.0 ㎃/㎠ short circuit photocurrent density, 0.64 fill factor and 13.9% energy conversion efficiency under 100㎽/㎠ tungsten halogen lamp irradiation. Therefore, this solar cell is a very promising one, but the life testing is not performed yet in our laboratory.
羅炳旭,李相潤,孫鍊圭,金東洛 慶北大學校 自然科學大學 1982 自然科學論文集 Vol.1 No.-
Titanium thin film was deposited on the chemically etched (100) surface of silicon single crystal by the vacuum evaporation. The interfacial oxide was grown by ramp heating. The Ti/p-Si solar cells have shown good rectification properties with the 0.78V built-in potential and the 20μA/㎠ reverse saturation current density in dark. The best cell have 0.58V open circuit voltage, 38.0 mA/㎠ short circuit photocurrent density, 0.64 fill factor and 13.9% energy conversion efficiency under 100mW/㎠ tungsten halogen lamp irradiation. Therefore, this solar cell is very promising one, but the life testing is not performed yet in our laboratory.
多層薄膜型 ZnS : Mn電場發光素子에 관한 硏究 Mn Thin Film Electroluminescence and it's Characteristics
李相潤,羅炳旭,孫相豪,李相敦 慶北大學校 1986 論文集 Vol.42 No.-
The devices have an ITO-Y_2O_3-ZnS : Mn-Y_2O_3-Al structure with Y_2O_3 double insulating layers. The dependence of the emission characteristics and crystallinity of ZnS : Mn upon the fabrication parameters such as the Mn concentrations and substrate temperatures during the evaporation has been investigated. The highest brightness with 30fL at frequency of 1KHz and a pulse height of 200V was obtained. And then the peak of spectrun of PL and EL are 5850Å.
최병욱,조덕연 선문대학교 2001 공학계열 논총 Vol.4 No.-
In this paper, we apply the embedded Linux to monitor the status of industrial inverter, which is for controlling the motor of hydraulic elevator. And we implement the monitoring board using an embedded web server in which embedded Linux is running inside. The monitoring board is based on ARM7TDMI and has Ethernet controller to connect internet. The web-based monitoring system using embedded Linux can reduce the cost, and have flexibility both of technical issues and locations of the system to be monitored. The system shows the feasibility of remote monitoring system based on embedded web server running as a daemon in embedded Linux.