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Nam, Junggyu,Kang, Yoonmook,Kim, Dongseop,Baek, Dohyun,Lee, Dongho,Yang, JungYup Elsevier 2016 Solar energy materials and solar cells Vol.144 No.-
<P><B>Abstract</B></P> <P>We investigated the surface properties of a Mo back contact for large-area thin-film solar modules with high efficiency and good adhesion between Mo and the absorber layer. It was determined that the appropriate surface properties of Mo would improve the efficiency from 10% to above 15.0±0.21% and narrow the efficiency distribution in large-area modules. The Mo back contact was annealed at various temperatures between room temperature and 230°C in air to control the amount of sodium diffusing from the soda-lime glass substrate during selenization and sulfurization, and to improve the uniformity of the unit cell. Before the heat treatment, the amount of sodium in the patterned area of the unit cell was more than 10 times of that in the central area of the cell. The patterned region with higher Na content had smaller grains than those in the central area with less Na, resulting in many peel-offs and shunting paths. The difference in sodium content was reduced after heat treatment. The optimized surface oxide of the Mo back contact had a thickness of around 3–5nm and consisted of the MoO<SUB>3</SUB> phase. The grain boundary of Mo columnar structure near the surface consisted of the oxide layer.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The surface oxide layer (under 5nm) of Mo back contact improved the efficiency of large modules. </LI> <LI> The reason of the peel-off is the stress of thin film after selenization/sulfurization due to the grain size of CIGSS. </LI> <LI> Shunt paths were reduced after the oxidation of Mo back contact. </LI> <LI> The oxidation of Mo back contact reduced the difference between pattern region and the middle of unit cell. </LI> <LI> The heat treatment of Mo back contact was conducted in the range from room temperature to 230°C. </LI> </UL> </P>
Contact Characteristics of Silicon and Indium Tin Oxide (ITO) in Polysilicon
Donghwan Kim,Won-Kyu Park,Yoonmook Kang 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
Contact-resistance reduction methods were investigated for the contact between Si layer and indium tin oxide (ITO) when the number of photolithography-mask step processes needs to be reduced in the new polycrystalline silicon thin-film-transistor (TFT) device structure. A barrier oxide has been developed for ITO/Si contact in polysilicon TFT. Titanium oxide located between Si and ITO may prevent the formation of silicon oxide that degrades the contact resistance. This method is useful for displays because it meets the requirements for the electric and optical characteristics.
Park, Hyomin,Park, Sungeun,Lee, Seunghun,Kang, Yoonmook,Lee, Hae-Seok,Kim, Donghwan American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.10
<P>In this study, the effect of acceleration voltage on emitter properties was investigated. Phosphorus ion was implanted into a silicon substrate at acceleration voltages of 7, 13, and 20 KeV. As the acceleration voltage increased, the amorphous layer thickness increased from 14 to 33 nm. The projected ranges were around 10 to 13 nm, and little change was observed with the acceleration voltage. The as-implanted phosphorus concentrations as well as the junction depth were higher for higher acceleration voltages. As the phosphorus acceleration voltage increased, a larger and rougher area of contrast was observed at the amorphous/crystalline interface. After thermal treatment at 750 degrees C, strains were observed by high-resolution X-ray diffraction for all acceleration conditions. It was observed that a higher acceleration voltage resulted in a higher intensity of rocking curves with more fringes. Sheet resistances decreased rapidly after thermal treatment above 850 degrees C. The sheet resistance decreased with increasing annealing temperature, while at every temperature, the sample at 7 KeV acceleration voltage showed a higher sheet resistance than the samples at 13 and 20 KeV. The mobility increased for temperatures up to 850 degrees C but the carrier concentrations showed little change. Above 850 degrees C, the mobility did not show much change, but the carrier concentration increased. It is considered that the dopant activation was highly affected by the carrier concentration and not by the mobility.</P>
Investigation of Optimum Conditions for Synthesis of Cu(In,Ga)Se2 Nanoparticles by Refluxing
Mi Joung Kim,Yongjei Lee,양정엽,이민재,Yoonmook Kang,PilHo Huh 한국물리학회 2020 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.76 No.6
Cu(In,Ga)Se2 (CIGSe) has been proven to be a better candidate as a light absorber layer in thin-film solar cells. However, most processes require high vacuum and high temperature during deposition, which results in significant loss of materials and is not applicable to a flexible substrate. Solution processes often involve low processing temperature and cheap precursor, can be used with flexible substrates, and offer the possibility of roll-to-roll manufacturing, potentially reducing manufacturing costs for the module. Here, we have experimentally investigated the optimum synthesis conditions for CIGSe nanoparticles fabricated by using a facile and a non-vacuum reflux method for low-temperature solution processes. By employing various reflux conditions by changing the temperature of heating mantle, single-phase CIGSe nanoparticles were synthesized at 200 °C. On the other hand, synthesized products with an impure multi-phase were formed at heating mantle temperatures lower than 200 °C. XRD measurements confirmed that the Ga content of the CIGSe nanoparticles increased with increasing heating mantle temperature. In addition, the average diameter of the CIGSe nanoparticles increased with increasing reaction time from 5 min to 30 min at a fixed heating mantle temperature of a 200 °C. The optical band gap is calculated by using ultraviolet-visible (UV-Vis) absorption spectra, decreased from 1.69 eV to 1.29 eV with increasing reaction time due to the increased CIGSe nanoparticles size. From our results, we can conclude that the characteristics of the CIGSe nanoparticles can be effectively controlled by using simple growth conditions, thereby providing many advantages for the fabrication of absorber layers for use in CIGSe solar cells.