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접촉전도와 반투명 복사가 반도체 웨이퍼의 CVD 공정 중 열전달에 미치는 영향
윤용석(Yong Seok Yoon),홍혜정(Hye Jung Hong),송명호(Myungho Song) 대한기계학회 2008 大韓機械學會論文集B Vol.32 No.2
During CVD process of semiconductor wafer fabrication, maintaining the uniformity of temperature distribution at wafer top surface is one of the key factors affecting the quality of final products. Effect of contact conductance between wafer and hot plate on predicted temperature of wafer was investigated. The validity of opaque wafer assumption was also examined by comparing the predicted results with Discrete Ordinate solutions accounting for semitransparent radiative characteristics of silicon. As the contact conductance increases predicted wafer temperature increases and the differences between maximum and minimum temperatures within wafer and between wafer and hot plate top surface temperatures decrease. The opaque assumption always overpredicted the wafer temperature compared to semitransparent calculation. The influences of surrounding reactor inner wall temperature and hot plate configuration are then discussed.