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Method for providing IP-based voice conferencing service using Session Initiation Protocol
Wook Hyun,ShinGak Kang 대한전자공학회 2007 ITC-CSCC :International Technical Conference on Ci Vol.2007 No.7
Since SIP has been proposed and standardized in IETF, it has been one of major signaling protocol in internet telephony service area. Since SIP has been selected as a base protocol in 3GPP, ITU-T, there have been several kinds of new featured services proposed by extending SIP. However this kind of new featured services requires some service-specific extensions on the signaling protocol. In other words, it is required to upgrade or replace firmware of end user devices for accommodating each new service. In this paper, we introduce a way of providing conference service to conference-unaware SIP UAs.
Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage
Wookhyun Kwon,In Jun Park,Changhwan Shin 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.2
For highly scalable NAND flash memory applications, a compact (4F2/cell) nonvolatile memory architecture is proposed and investigated via threedimensional device simulations. The back-channel program/erase is conducted independently from the front-channel read operation as information is stored in the form of charge at the backside of the channel, and hence, read disturbance is avoided. The memory cell structure is essentially equivalent to that of the fully-depleted transistor, which allows a high cell read current and a steep subthreshold slope, to enable lower voltage operation in comparison with conventional NAND flash devices. To minimize memory cell disturbance during programming, a charge depletion method using appropriate biasing of a buried back-gate line that runs parallel to the bit line is introduced. This design is a new candidate for scaling NAND flash memory to sub-20 nm lateral dimensions.
Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage
Kwon, Wookhyun,Park, In Jun,Shin, Changhwan The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.2
For highly scalable NAND flash memory applications, a compact ($4F^2/cell$) nonvolatile memory architecture is proposed and investigated via three-dimensional device simulations. The back-channel program/erase is conducted independently from the front-channel read operation as information is stored in the form of charge at the backside of the channel, and hence, read disturbance is avoided. The memory cell structure is essentially equivalent to that of the fully-depleted transistor, which allows a high cell read current and a steep subthreshold slope, to enable lower voltage operation in comparison with conventional NAND flash devices. To minimize memory cell disturbance during programming, a charge depletion method using appropriate biasing of a buried back-gate line that runs parallel to the bit line is introduced. This design is a new candidate for scaling NAND flash memory to sub-20 nm lateral dimensions.
플라즈마의 특성 분석을 위한 수정된 로렌츠 분산 모형 기반 FDTD 알고리즘
안욱현(Wookhyun Ahn),김상인(Sangin Kim),조창석(Changseok Cho),오태주(Taejoo Oh),이용식(Yongshik Lee),오일영(Ilyoung Oh),임진우(Jinwoo Yim),하정제(Jungje Ha),배지훈(Gihun Bae),유흥철(Heung Cheol You),육종관(Jong-Gwan Yook) 한국전자파학회 2021 한국전자파학회논문지 Vol.32 No.2
본 논문은 유한 차분 시간 영역법(FDTD: finite-difference time-domain)에 적용 가능한 플라즈마 분산 모형을 제안한다. 주파수에 따라 전기적 특성이 변하는 플라즈마의 분산 특성을 정확하고 효율적으로 모델링하기 위해 수정된 로렌츠 분산 모형을 이용하여 표현하였다. 가중최소제곱법 기반의 복소 곡선 접합법을 적용하여 플라즈마에 대한 수정된 로렌츠 분산 모형의 계수를 추출하였으며, 수정된 로렌츠 분산 모형을 FDTD에 적용하는 방법을 논의하였다. 본 논문에서 제안한 수정된 로렌츠 분산 모형 기반의 플라즈마 모형이 유전체 장벽 방전(DBD: dielectric barrier discharge) 플라즈마 발생기를 유전체 슬래브로 등가 모델링하여 추출한 유전율의 데이터와 일치하는 것을 확인하였다. 광대역 레이다 단면적(RCS: radar cross-section) 측정실험의 결과와 비교를 통해 제안한 수정된 로렌츠 분산 모형 기반의 FDTD 알고리즘의 정확도를 검증하였다. In this paper, to analyze the dispersive characteristics of plasma, a dispersive model suitable for the finite-difference time-domain (FDTD) method is proposed. The dispersive characteristics of plasma with varying electrical properties according to frequency were accurately and efficiently expressed using the modified Lorentz dispersive model. The coefficient of the modified Lorentz dispersive model was extracted by applying complex curve fitting based on the weighted least squares method. The method of applying the modified Lorentz dispersion model to the FDTD is discussed. The plasma model based on the modified Lorentz dispersion model proposed in this paper was verified to match the data of the dielectric barrier discharge (DBD) plasma generator from dielectric slab equivalent modeling. The accuracy of the proposed FDTD algorithm based on the modified Lorentz dispersive model was verified by comparison with the results of the broadband radar cross-section (RCS) measurement experiment.