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End to End ZigBee Home Network Security Solutions
Changguk Lee,Jaiyong Lee,Woochool Park,Mynghyun Yoon,Sunghyun Yang 대한전자공학회 2007 ITC-CSCC :International Technical Conference on Ci Vol.2007 No.7
ZigBee home network service is expected to fill every aspect of our lives and play increasingly important roles. ZigBee is designed to support low cost and battery powered applications. So ZigBee nodes have small memory and insufficient computation capability to support heavy data handling. In this paper, we presents a systematic analysis of the threats faced by IEEE 802.15.4 and the ZigBee Alliance. Attack scenarios are models and their impacts are evaluated. Some security problems within the current ZigBee security architecture are identified and remedies are suggests. And countermeasures of various attacks are also given. Most of the solutions are implemented in the Security Server. And ZigBee nodes have a few security handling capability.
Characteristics of low-<i>κ</i> SiOC films deposited via atomic layer deposition
Lee, Jaemin,Jang, Woochool,Kim, Hyunjung,Shin, Seokyoon,Kweon, Youngkyun,Lee, Kunyoung,Jeon, Hyeongtag Elsevier S.A. 2018 Thin Solid Films Vol.645 No.-
<P><B>Abstract</B></P> <P>The deposition of SiOC thin films via remote plasma atomic layer deposition was investigated. Octamethylcyclotetrasiloxane (OMCTS) and O<SUB>2</SUB>, Ar, H<SUB>2</SUB> plasmas were respectively used as a precursor and reactants during the deposition process at 400°C. Plasma and deposition temperatures had a significant effect on the physical and electrical characteristics of the films. When Ar and H<SUB>2</SUB> plasma was respectively used during the deposition process, films exhibited low dielectric constants while incorporating carbon; however, O<SUB>2</SUB> plasma yielded carbon free SiO<SUB>2</SUB> films. Low dielectric constants resulted in low film densities and the presence of carbon within the films. When Ar and H<SUB>2</SUB> plasma was used as the reactant gas, pores within the films with loose structures and SiC bonds served to lower the dielectric constant. As a result, Ar and H<SUB>2</SUB> plasma conditions exhibited low dielectric constants of 2.7 and 3.1 at 100°C, respectively. Meanwhile, the presence of carbon and low film densities caused leakage paths within the films. X-ray photoelectron spectroscopy supported analyses demonstrating the bonding characteristics of Si, C, O components.</P> <P><B>Highlight</B></P> <P> <UL> <LI> SiOC thin films prepared by atomic layer deposition (ALD) with O<SUB>2</SUB>, Ar, H<SUB>2</SUB> plasma. </LI> <LI> O<SUB>2</SUB> plasma is unfavorable to incorporate carbon into SiOC films. </LI> <LI> SiOC ALD deposited with Ar plasma showed low k but high leakage property. </LI> <LI> H<SUB>2</SUB> plasma made SiOC ALD thin films with low k and low leakage property. </LI> </UL> </P>
Lee, Kunyoung,Jang, Woochool,Kim, Hyunjung,Lim, Heewoo,Kim, Bumsik,Seo, Hyungtak,Jeon, Hyeongtag Elsevier 2018 THIN SOLID FILMS - Vol.657 No.-
<P><B>Abstract</B></P> <P>Among various high-k materials, zirconium dioxide (ZrO<SUB>2</SUB>) has attracted considerable attention due to its high dielectric constant and wide band gap. However, its main disadvantage of ZrO<SUB>2</SUB> films which have tetragonal phase is its large leakage current along grain boundaries. Doping ZrO<SUB>2</SUB> with silicon has been proposed as a solution to this issue.</P> <P>In this study, we investigated the electronic structure of Si-doped ZrO<SUB>2</SUB> thin films. We used atomic layer deposition to deposit Si-doped ZrO<SUB>2</SUB> thin films. This method has many advantages such as excellent step coverage, low process temperature, and ultrathin growth. We found that proper Si doping, which affects Si distribution in the ZrO<SUB>2</SUB> and therefore its electronic band structure, is necessary for leakage current reduction.</P> <P><B>Highlights</B></P> <P> <UL> <LI> ZrO<SUB>2</SUB> thin films were deposited by atomic layer deposition and were doped with Silicon. </LI> <LI> Increasing the level of Si doping caused a reduction in leakage current density. </LI> <LI> The conduction band offset depended on Si doping. </LI> <LI> The conduction band offset affected the leakage current density. </LI> </UL> </P>
Kim, Hyunjung,Park, Jingyu,Jeon, Heeyoung,Jang, Woochool,Jeon, Hyeongtag,Yuh, Junhan American Institute of Physics 2015 Journal of Vacuum Science & Technology. A Vol.33 No.5
<P>Diffusion barrier characteristics of tungsten-nitride-carbide (WNxCy) thin films interposed between Cu and SiO2 layers were studied. The WNxCy films were deposited by remote plasma atomic layer deposition (RPALD) using a metal organic source, (Cp-Me)W(CO)(2)(NO), and ammonia. Auger electron spectroscopy analysis indicated the WNxCy films consisted of tungsten, nitrogen, carbon, and oxygen. X-ray diffraction (XRD) analysis showed that the film deposited at 350 degrees C was nanocrystalline. The resistivity of WNxCy film deposited by RPALD was very low compared to that in previous research because of the lower nitrogen content and different crystal structures of the WNxCy. To verify the diffusion barrier characteristics of the WNxCy film, Cu films were deposited by physical vapor deposition after WNxCy film was formed by RPALD on Si substrate. The Cu/WNxCy/Si film stack was annealed in a vacuum by rapid thermal annealing at 500 degrees C. Cu diffusion through the barrier layer was verified by XRD. Stable film properties were observed up to 500 degrees C, confirming that WNxCy film is suitable as a Cu diffusion barrier in microelectronic circuits. VC 2015 American Vacuum Society.</P>