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Kim,Jong Kwan,Park,Seong Hyung,Kim,In Soo,Yang,Wo Uns,Lee,Young Jong,Hwang,Jeong Mo,Sung,Yung Kwon 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
We have investigated the latchup characteristics of BLIBILLi (Buried Layer / Buried Implanted Layer for Lateral Isolation) retrograde twin well CMOS that has blanket high energy ion implanted buried layer to intend for more improvement of latchup compare to conventional Retrograde Well and BILLI structures. We explored the dependence of various latchup characteristics such as n+ trigger latchup and p+ trigger latchup characteristics on the buried layer implant doses. We show various DC latchup characteristics that allow us to evaluate each technology and suggest guidelines for the reduction of latchup susceptibility.