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RISS 인기검색어
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- 저자 : Vishvakarma, (검색결과 2 건)
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Effect of Neem (Azadirachta indica) oil on the progressive growth of a spontaneous T cell lymphoma
Mallick, Sanjaya Kumar,Gupta, Vivekanand,Singh, Mahendra Pal,Vishvakarma, Naveen Kumar,Singh, Nisha,Singh, Sukh Mahendra Kyung Hee Oriental Medicine Research Center 2008 Oriental pharmacy and experimental medicine Vol.7 No.5
The present study was undertaken to investigate the effect of in vivo administration of neem oil intra-peritoneally (i.p.) to mice bearing a progressively growing transplantable T cell lymphoma of spontaneous origin, designated as Daltons lymphoma (DL), on the tumor growth. Mice were administered various doses of neem oil mixed in groundnut oil, which was used as a diluting vehicle or for administration to control DL-bearing mice. Administration of neem oil resulted in an acceleration of tumor growth along with a reduction in the survival time of the tumor-bearing host. Neem oil administered DL-bearing mice showed an augmented apoptosis in splenocytes, bone marrow cells and thymocytes along with an inhibition in the anti-tumor functions of tumor-associated macrophages. Thus this study gives an altogether a novel information that neem oil instead of the popular belief of being anti-tumor and immunoaugmentary may in some tumor-bearing conditions, behave in an opposite way leading to an accelarated tumor progression along with a collapse of the host's anti-tumor machinery. These observations will thus have long lasting clinical significance, suggesting caution in use of neem oil for treatment of cancer.
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Improvement in Electrical Characteristics of BE-SONOS Using High-k Dielectrics in Tunneling Barrier
Vaibhav Neema,Mansimran Kaur,Deepika Gupta,Santosh Kumar Vishvakarma,Arya Dutt,Ankur Beohar 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.3
In this paper, we have analyzed the effect of high-k dielectrics in the tunneling barrier of bandgap engineered Silicon Oxide Nitride Oxide Silicon (BE-SONOS). The high-k materials used, hereby, are scandates and aluminates of the rare earth materials such as GdScO, LuAlO, and LaAlO. These materials have high permittivity and low valence band off set that helps in improving the erase speed and retention trade-off . Also, lower conduction band off set of these high-k dielectrics leads to the improvement of program speed. Here, scandate of the rare earth material, GdScO, substitutes the nitride (SiN) layer and the aluminates of the rare earth material, LuAlO and LaAlO, are used in place of top oxide (SiO 2 ) layer in tunneling barrier (SiO 2 /SiN/SiO 2 ) of BE-SONOS. Further, with the scaling of the gate length; for the same effective oxide thickness, it has been observed that the investigated stacks encompass the same memory dynamics as before the gate length scaling. Consequently, the investigated tunneling barrier stacks represent robustness in terms of retention (at room temperature and 150 ºC) and enhanced program speed as well as erase speed and retention trade-off .
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