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Enhanced Phase Relaxation in a Hybrid Ferromagnet/Semiconductor System
Kuang Yao Chen,Chun-Kai Yang,N. Aoki,Y. Ochiai,Y. Ujiie,K. A. Cheng,Li-Hung Lin,C. F. Huang,Yu-Ru Li,Yen Shung Tseng,Po-Tsun Lin,Jau-Yang Wu,Sheng-Di Lin,C.-T. Liang 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems. Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems.