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Light induced recombination center at SiO2/Si interface by the reactive plasma deposition
Tomohiko Hara,Taichi Tanaka,Kazuhito Nakagawa,Yuki Isogai,Takefumi Kamioka,Yoshio Ohshita 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.5
Effect of lights with various wavelength on the defect generation in reactive plasma deposition (RPD) process is studiedusing capacitance–voltage analysis. Indium-tin oxide (ITO) deposition by RPD dramatically decreases the minority carrierlifetime and deteriorates the solar cell performances. The wavelength of light which arrives at the SiO2/Si interface andSi crystal is controlled by varying the SiO2thickness in SiO2/Si samples. Thick SiO2layer with above 10 nm prevents thepenetration of many ions into the SiO2/Si interface layer, and the only effects of light wavelength on the defect formation areobtained. When SiO2thickness are 10–600 nm, a large number of defects of the order of 1012eV−1 cm−2, mid gap energyof Si, are generated by ITO-RPD independent of SiO2thickness. These defects are expected to be recombination centers. These SiO2thicknesses are enough thick to completely absorb the light below-110-nm-wavelength. The results suggest thatthe light of longer wavelength than 110 nm mainly contributes to the defect formation in RPD process. On the other hand,in the case of 500 μm thick SiO2,the generated defects are significantly decreased by one order of magnitude (or decreasedto the order of 1010eV−1 cm−2) small amount of defect is generated. This thick SiO2prevents the penetration of light withbelow 180 nm wavelength into the Si. Therefore, the light with around 110–180 nm wavelength, which are generated by Arand/or O2plasma in RPD process, mainly forms the recombination-active defects.
Photoluminescence properties of La2-xDyxW2O9 for plant habitat-conscious LEDs
Tomohiko Nakajima,Harumi Hanawa,Tetsuo Tsuchiya 한양대학교 세라믹연구소 2016 Journal of Ceramic Processing Research Vol.17 No.5
We have prepared a new phosphor Dy-substituted La2W2O9. The La2-xDyxW2O9 exhibited a yellow-white luminescenceconsisting of sharp emission peaks assigned to 4F9/2 → 6H15/2, 4F9/2 → 6H13/2, 4F9/2 → 6H11/2, and 4F9/2 → 6H9/2 transitions in Dy3+ions, respectively. The maximum internal quantum efficiency was 21.3% at x = 0.05 under the 387 nm excitation light. Thewhite LED was fabricated by using a UV LED at 385 nm and the La2-xDyxW2O9 (x = 0.05) phosphor (Dy-WLED). The plantcultivation experiments for Chlorella photosynthetic growth was carried out by using the Dy-WLED and a referencecommercial white LED, and the reduction of the Chlorella growth was confirmed in the Dy-WLED.
Import Competition, Industrial Agglomeration and Japanese Manufacturing Plants Performance
( Tomohiko Inui ),( Toshiyuki Matsuura ),( Kazuma Edamura ) 서강대학교 경제연구소 2010 시장경제연구 Vol.39 No.3
During the 1980s and 1990s, Japanese manufacturers began to relocate production from sites in Japan to low-wage East Asian countries such as China, Malaysia and Thailand. Imports of manufacturing goods increased substantially over the same period. This rapid rise in imports, and the quickening spread of globalization, has led to concerns among policymakers that employment growth and plant survival may suffer, with some regions more affected than others. This is the first paper which attempts to examine empirically effect of industrial agglomeration in the region on employment growth and plant survival to increased import penetration from low-wage countries. A rich, plant-level dataset on Japanese manufacturing sectors is used to examine this effect. We find that exposure to low-wage country imports has a negative effect on plant employment growth rates and its survival. However, where plants have high productivity, the effect of low-wage imports is ameliorated. We also find evidence that the advance of globalization has led Japanese firms to consider inter-industry agglomeration, such as output linkage to be less important. However, regions with more input linkages and intra-industry agglomeration remain firms` preferred location for the plants when exposure to low-wage countries is high.
Tomohiko Kiriyama,Rumi Tanemura,Yoshihiro Nakamura,Chiaki Takemoto,Mariko Hashimoto,Hirohiko Utsumi 대한신경정신의학회 2020 PSYCHIATRY INVESTIGATION Vol.17 No.8
Objective Substantial research has revealed cognitive function impairments in patients with major depressive disorder (MDD). However, the relationship between MDD cognitive function impairment and brain activity is yet to be elucidated. This study aimed to reveal this relationship using near-infrared spectroscopy (NIRS) to extensively measure frontotemporal cortex function. Methods We recruited 18 inpatients with MDD and 22 healthy controls. Regional oxygenated hemoglobin changes (oxy-Hb) were measured during a verbal fluency task and its relationship to cognitive function was assessed. Cognitive function was assessed using the Japanese version of the Brief Assessment of Cognition in Schizophrenia. Results Compared to healthy controls, patients with MDD displayed poorer motor speed, attention and speed of information processing, and executive function. In the bilateral prefrontal and temporal surface regions, regional oxy-Hb changes were significantly lower in patients with MDD than in healthy individuals. Moreover, we observed a correlation between reduced activation in the left temporal region and poor motor speed in patients with MDD. Conclusion We suggest that reduced activation in the left temporal region in patients with MDD could be a biomarker of poor motor speed. Additionally, NIRS may be useful as a noninvasive, clinical measurement tool for assessing motor speed in these patients.