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        MBE Growth and Characterization of MgS-Rich Zinc-Blende ZnxMg1−xS1−ySey Alloys

        Richard T. Moug,Christine Bradford,Damien Thuau,Arran Curran,Richard J. Warburton,Kevin A. Prior 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5

        Samples containing ZnMgSSe alloy were grown by using molecular beam epitaxy at 240 ℃ and were analyzed by using X-ray interference. The alloy composition was found to be Zn0.20Mg0.80S0.64Se0.36. The surfaces of these layers were found to be extremely flat, unlike MgS layers of similar thickness grown under identical conditions, which show pronounced ridges. Structures with Zn0.20Mg0.80S0.64Se0.36 barriers were grown with ZnSe quantum wells and showed good quantum confinement with a sharp PL peak. Calculations of the phase stability of ZnMgSSe alloys suggest that an alloy of this composition should phase separate. However, samples with this composition are demonstrably single phase, and the discrepancy with the calculation can be removed if the enthalpy of formation of zinc-blende MgS is reduced by less than 2 % to −231 kJ mol−1.

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        Growth and Characterization of ZnMgS and ZnMgS/ZnSe Quantum Wells grown on GaAs (100) by Using MBE

        C. Bradford,R. T. Moug,A. Curran,D. Thuau,R. J. Warburton,K. A. Prior 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5

        Structures containing Zn1-xMgxS have been grown lattice matched to GaAs by using molecular beam epitaxy (MBE) with ZnS as the source of S. The composition of the alloy produced has been determined using double-crystal X-ray spectroscopy and X-ray interference measurements. Both techniques indicate that 0.88 ≤ x ≤ 0.93. This result is conrmed by both secondary ion mass spectroscopy and an Auger analysis carried out on the material. These results show that the crystalline quality of the material produced is excellent and that it has been grown coherently to the GaAs substrate. Photoluminescence spectroscopy shows a high intensity emission with a narrow full width half maximum, confirming the suitability of this alloy as a high-bandgap barrier material. Structures containing Zn1-xMgxS have been grown lattice matched to GaAs by using molecular beam epitaxy (MBE) with ZnS as the source of S. The composition of the alloy produced has been determined using double-crystal X-ray spectroscopy and X-ray interference measurements. Both techniques indicate that 0.88 ≤ x ≤ 0.93. This result is conrmed by both secondary ion mass spectroscopy and an Auger analysis carried out on the material. These results show that the crystalline quality of the material produced is excellent and that it has been grown coherently to the GaAs substrate. Photoluminescence spectroscopy shows a high intensity emission with a narrow full width half maximum, confirming the suitability of this alloy as a high-bandgap barrier material.

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