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Ai, T.N.,Naing, A.H.,Arun, M.,Lim, S.H.,Kim, C.K. Elsevier Scientific Publishers Ireland Ltd 2016 Plant science Vol.252 No.-
<P>The effects of three different sucrose concentrations on plant growth and anthocyanin accumulation were examined in non-transgenic (NT) and transgenic (T-2) specimens of the Petunia hybrida cultivar 'Mirage rose' that carried the anthocyanin regulatory transcription factors B-Peru + mPAP1 or RsMYB1. Anthocyanin accumulation was not observed in NT plants in any treatments, whereas a range of anthocyanin accumulation was observed in transgenic plants. The anthocyanin content detected in transgenic plants expressing the anthocyanin regulatory transcription factors (B-Peru + mPAP1 or RsMYB1) was higher than that in NT plants. In addition, increasing sucrose concentration strongly enhanced anthocyanin content as shown by quantitative real-time polymerase chain reaction (qRT-PCR) analysis, wherein increased concentrations of sucrose enhanced transcript levels of the transcription factors that are responsible for the induction of biosynthetic genes involved in anthocyanin synthesis; this pattern was not observed in NT plants. In addition, sucrose affected plant growth, although the effects were different between NT and transgenic plants. Taken together, the application of sucrose could enhance anthocyanin production in vegetative tissue of transgenic Petunia carrying anthocyanin regulatory transcription factors, and this study provides insights about interactive effects of sucrose and transcription factors in anthocyanin biosynthesis in the transgenic plant. (C) 2016 Elsevier Ireland Ltd. All rights reserved.</P>
Arun Samuel, T.S.,Balamurugan, N.B. The Korean Institute of Electrical Engineers 2014 Journal of Electrical Engineering & Technology Vol.9 No.1
In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.
T.S.Arun Samuel,N.B.Balamurugan,T.Niranjana,B.Samyuktha 대한전기학회 2014 Journal of Electrical Engineering & Technology Vol.9 No.2
In this paper, a new two dimensional (2D) analytical modeling and simulation for a surrounding gate tunnel field effect transistor (TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunneling generation rate and thus we numerically extract the tunneling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.
Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors
T.S.Arun Samuel,N.B.Balamurugan,S.Sibitha,R.Saranya,D.Vanisri 대한전기학회 2013 Journal of Electrical Engineering & Technology Vol.8 No.6
In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.
T.S.Arun Samuel,N.B.Balamurugan 대한전기학회 2014 Journal of Electrical Engineering & Technology Vol.9 No.1
In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.
Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors
Samuel, T.S.Arun,Balamurugan, N.B.,Sibitha, S.,Saranya, R.,Vanisri, D. The Korean Institute of Electrical Engineers 2013 Journal of Electrical Engineering & Technology Vol.8 No.6
In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.
Samuel, T.S. Arun,Balamurugan, N.B.,Niranjana, T.,Samyuktha, B. The Korean Institute of Electrical Engineers 2014 Journal of Electrical Engineering & Technology Vol.9 No.2
In this paper, a new two dimensional (2D) analytical modeling and simulation for a surrounding gate tunnel field effect transistor (TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunneling generation rate and thus we numerically extract the tunneling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.
T. S Anandh,Bijan Kumar Das,J. Kuttippurath,Arun Chakraborty 한국기상학회 2021 Asia-Pacific Journal of Atmospheric Sciences Vol.57 No.2
This study evaluates the impact of coupled model in simulating the ocean state conditions of Bay of Bengal by comparing standalone and coupled numerical model simulations. The oceanic model is the Regional Ocean Modelling System (ROMS) and the coupled model comprises of ROMS and Weather Research and Forecast modelling system to simulate the oceanic and atmospheric state of the bay. The coupled model is initialized with atmospheric data from Global Data Assimilation System and oceanic data from Estimating the Circulation and Climate of the Ocean (ECCO). The standalone model is initiated with ECCO data and forced by European Centre for Medium RangeWeather Forecasts. The simulations are set with a resolution of 12 km in the ocean and 15 km in the atmosphere for the period 2008–2014, and are compared to reanalysis and measurements. The models are compared for their ability to simulate the sea surface temperature, sea surface salinity, sea level, heat flux, sea level pressure and currents in BOB. With the exchange of atmospheric fluxes and sea surface temperature, the coupled model better captured ocean state representations than the standalone model and, matches well with that of the observations. The simulated temperature shows a warm bias in both simulations at 100–150 m depth. The models are able to simulate the seasonal reversal of boundary currents and associated eddies, and variations in heat fluxes over the ocean. The coupled model provides a better simulation of the ocean state and air–sea interaction which can further be used for climate studies over the bay.