Analysis of heterosis and recombination loss for fitness and productivity traits in different hybrids of mulberry silk moth Bombyx mori

Gopal SUBRAMANYA,Stephen C. BISHOP 한국곤충학회 2011 Entomological Research Vol.41 No.1

Three different races of lepidopteron silk moth Bombyx mori were used in reciprocal and inter se crosses to determine heterosis effects at F₁and recombination loss at the F₂generation for three fitness traits (fecundity, larval duration, survival rate) and four productivity traits (larval weight, cocoon weight, shell weight, filament length). Eleven mating types were represented in the present study, including three pure breeds and a variety of F₁and F₂populations arising from regular and reciprocal crosses, respectively. Equations were derived to evaluate heterosis, maternal and overdominance effects for the above traits. Estimates of heterosis and overdominance effects revealed significant heterosis effects for all the traits, but overdominance was only seen for larval duration (favorable effect) and survival rate (unfavorable effect). Maternal effects were significant for the majority of the traits under study. The results revealed significant reduction for all the quantitative traits from F₁to F₂, except for larval duration. The most obvious explanation for the reduction of fitness parameters and productive traits is the reduction in heterozygosity from F₁to F₂(it is expected that one half of the heterozygosity of F₁is lost in F₂). For larval duration this explanation seems insufficient and breakdown of epistatic gene effects (i.e. recombination loss) has been suggested.

Grain storage losses in the traditional tribal settlements of Biligirirangana Hills, Karnataka, India

Nadur L. Naveena,Suryanarayana Subramanya,Siddappa Setty,V. Palanimuthu 한국응용곤충학회 2017 Journal of Asia-Pacific Entomology Vol.20 No.2

The forest dwelling tribal Soligas who reside at Biligirirangana Hills cultivate more than 30 different crops including pulses, cereals, millets and vegetable crops as a part of subsistence agriculture. They store more than 80% of their produce in their households for consumption. The present study examines the grain storage practices followed by Soligas and the extent of losses incurred by them, in a traditional agricultural setup. In all, 13 different storage structures used by Soligas were recorded. These included both traditional and modern structures. Among these, plastic oven sac was being used most widely, while Thenemane used for storing maize cobs was the least used structure by the Soligas. An evaluation of these storage structures for safe storage of grains revealed that, none of the traditional storage structures were found to be suitable for grain storage, as they had one or the other disadvantages like, not being moisture or insect or rodent proof. However, the modern structures like, the plastic bins were moisture and rodent proof, but they failed to provide protection against insects. Soligas adopted 10 different grain protection methods for safe storage of grains. Despite their use, the presence of insect infestation ranged from 32.14 to 56.41%. Callosobruchus theobromae was the most common stored grain insect found infesting fieldbean (Dolichos bean) that was stored in most of the settlements, while Tribolium castaneum was the rarest, found infesting only split pigeon pea (Cajanus cajana). The extent of grain damage ranged from 10 to 100% in the samples collected.

Crack growth prediction and cohesive zone modeling of single crystal aluminum-a molecular dynamics study

Sutrakar, Vijay Kumar,Subramanya, N.,Mahapatra, D. Roy Techno-Press 2015 Advances in nano research Vol.3 No.3

Initiation of crack and its growth simulation requires accurate model of traction - separation law. Accurate modeling of traction-separation law remains always a great challenge. Atomistic simulations based prediction has great potential in arriving at accurate traction-separation law. The present paper is aimed at establishing a method to address the above problem. A method for traction-separation law prediction via utilizing atomistic simulations data has been proposed. In this direction, firstly, a simpler approach of common neighbor analysis (CNA) for the prediction of crack growth has been proposed and results have been compared with previously used approach of threshold potential energy. Next, a scheme for prediction of crack speed has been demonstrated based on the stable crack growth criteria. Also, an algorithm has been proposed that utilizes a variable relaxation time period for the computation of crack growth, accurate stress behavior, and traction-separation atomistic law. An understanding has been established for the generation of smoother traction-separation law (including the effect of free surface) from a huge amount of raw atomistic data. A new curve fit has also been proposed for predicting traction-separation data generated from the molecular dynamics simulations. The proposed traction-separation law has also been compared with the polynomial and exponential model used earlier for the prediction of traction-separation law for the bulk materials.

Switching Invariant Neighborhood Signed Graphs

R. Rangarajan,M. S. Subramanya,P. S. K. Reddy 장전수학회 2011 Proceedings of the Jangjeon mathematical society Vol.14 No.2

A signed graph (marked graph) is an ordered pair S = (G, ) (S = (G, μ)),where G = (V,E) is a graph called the underlying graph of S and [수식] is a function. The neighborhood graph of a graph G = (V,E), denoted by N(G),is a graph on the same vertex set V , where two vertices in N(G) are adjacent if, and only if, they have a common neighbor. Analogously, one can define the neighborhood signed graph N(S) of a signed graph [수식] as a signed graph,[수식] where N(G) is the underlying graph of N(S), and for any edge e = uv in N(S),[수식] where for any v 2 V , μ(v) =Y u)μ(v), where for any v 2 V , μ(v) = u2N(v) (uv). In this paper, we characterize signed graphs S for which S N(S), Sc N(S) and N(S) J(S), where J(S) and Sc denotes jump signed graph and complement of signed graph of S respectively.

(4, d)-Sigraph and Its Applications

Sampathkumar,M. S. Subramanya,P. Siva Kota Reddy 장전수학회 2010 Advanced Studies in Contemporary Mathematics Vol.20 No.1

Let G = (V,E) be a graph. By directional labeling (or d-labeling) of an edge x = uv of G by an ordered 4-tuple (a1, a2, a3, a4), we mean a labeling of the edge x such that we consider the label on uv as (a1, a2, a3, a4) in the direction from u to v, and the label on x as (a4, a3, a2, a1) in the direction from v to u. In this paper, we study graphs, called (4, d)-sigraphs, in which every edge is d-labeled by a 4-tuple (a1, a2, a3, a4), where ak 2 {+, −},for 1 ≤ k ≤ 4. Giving a motivation to study such graphs, we obtain some results by introducing new notions of balance and special types of complementations.

Sulfur Doping: Unique Strategy To Improve the Supercapacitive Performance of Carbon Nano-onions

Mohapatra, Debananda,Dhakal, Ganesh,Sayed, Mostafa Saad,Subramanya, Badrayyana,Shim, Jae-Jin,Parida, Smrutiranjan American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.8

<P>Recently, enhancement of the energy density of a supercapacitor is restricted by the inferior capacitance of negative electrodes, which impedes the commercial development of high-performance symmetric and asymmetric supercapacitors. This article introduces the in situ bulk-quantity synthesis of hydrophilic, porous, graphitic sulfur-doped carbon nano-onions (S-CNO) using a facile flame-pyrolysis technique and evaluated its potential applications as a high-performance supercapacitor electrode in a symmetric device configuration. The high-surface wettability in the as-prepared state enables the formation of highly suspended active conducting material S-CNO ink, which eliminates the routine use of binders for the electrode preparation. The as-prepared S-CNO displayed encouraging features for electrochemical energy storage applications with a high specific surface area (950 m<SUP>2</SUP> g<SUP>-1</SUP>), ordered mesoporous structure (∼3.9 nm), high S-content (∼3.6 at. %), and substantial electronic conductivity, as indicated by the ∼80% sp<SUP>2</SUP> graphitic carbon content. The in situ sulfur incorporation into the carbon framework of the CNO resulted in a high-polarized surface with well-distributed reversible pseudosites, increasing the electrode-electrolyte interaction and improving the overall conductivity. The S-CNOs showed a specific capacitance of 305 F g<SUP>-1</SUP>, an energy density of 10.6 W h kg<SUP>-1</SUP>, and a power density of 1004 W kg<SUP>-1</SUP> at an applied current density of 2 A g<SUP>-1</SUP> in a symmetrical two-electrode cell configuration, which is approximately three times higher than that of the pristine CNO-based device in a similar electrochemical testing environment. Even at 11 A g<SUP>-1</SUP>, the S-CNO||S-CNO device rendered an energy density (6.1 W h kg<SUP>-1</SUP>) at a deliverable power density of 5.5 kW kg<SUP>-1</SUP>, indicating a very good rate capability and power management during peak power delivery applications. Furthermore, it showed a high degree of electrochemical reversibility with excellent cycling stability, retaining ∼95% of its initial capacitance after more than 10 000 repetitive charge-discharge cycles at an applied current density of 5 A g<SUP>-1</SUP>.</P> [FIG OMISSION]</BR>

RNAi-mediated CCR5 Silencing by LFA-1-targeted Nanoparticles Prevents HIV Infection in BLT Mice

Kim, Sang-Soo,Peer, Dan,Kumar, Priti,Subramanya, Sandesh,Wu, Huaquan,Asthana, Deshratan,Habiro, Katsuyoshi,Yang, Yong-Guang,Manjunath, N,Shimaoka, Motomu,Shankar, Premlata Elsevier 2010 Molecular therapy Vol.18 No.2

Jump symmetric n-sigraphs

E. Sampathkumar,P. S. K. Reddy,M. S. Subramanya 장전수학회 2008 Proceedings of the Jangjeon mathematical society Vol.11 No.1

An n-tuple (a₁, a₂, ..., an) is symmetric, if ak = an−k+₁, 1 ≤ k ≤ n. A symmetric n-sigraph (symmetric n-marked graph) is an ordered pair Sn = (G, δ) (Sn = (G, μ)), where G = (V,E) is a graph called the underlying graph of Sn and δ : E → Hn (μ : V → Hn) is a function. Analogous to the concept of Jump sigraph of a sigraph, we define Jump symmetric n-sigraph of a symmetric n-sigraph. Introducing two notions of balance in symmetric n-sigraphs and some notions of complements we characterize the symmetric n-sigraphs which are switching equivalent to their Jump symmetric n-sigraphs.

Switching equivalence in symmetric -sigraphs

R. Rangarajan,P. Siva Kota Reddy,M. S. Subramanya 장전수학회 2009 Advanced Studies in Contemporary Mathematics Vol.18 No.1

An n-tuple (a1, a2, ..., an) is symmetric, if ak = an−k+1, 1 ≤ k≤ n. A symmetric n-sigraph (symmetric n-marked graph) is an ordered pair Sn = (G, б) (Sn = (G, μ)), where G = (V,E) is a graph called the underlying graph of Sn and [수식] : E → Hn (μ : V → Hn) is a function. Analogous to the concept of the common-edge sigraph of a sigraph, common-edge symmetric n-sigraph of a symmetric n-sigraph is defined. Further, we obtain some switching equivalent characterizations between common-edge symmetric n-sigraph, line symmetric n-sigraph and jump symmetric n-sigraph.

(3,d)-sigraph and its applications

E. Sampathkumar,P. S. K. Reddy,M. S. Subramanya 장전수학회 2008 Advanced Studies in Contemporary Mathematics Vol.17 No.1

LetG = (V;E) be a graph and x = uv be an edge in G. By directional labeling (or d-labeling) of an edge x = uv of G by an ordered triple(a1;a2;a3), we mean a labeling of x such that we consider the label on x as (a1;a2;a3) in the direction from u to v, and the label on x as (a3;a2;a1)in the direction from v to u. In this paper, we study graphs in which every edge is d-labeled by a triple (a1;a2;a3), where ak 2 f+ ;g , for 1 k 3,called (3, d)-sigraphs. Giving some motivation to study such graphs, we obtain some results by introducing some notions of balance and special types of complements.