http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
INNOVATION POLES IN TECHNOLOGICALLY EMERGING AND DECELOPMENT REGIONS WORLDWIDE
Gibson, David V.,Pedro, Conceicao,Chris Stiles 忠南大學校 地域開發硏究所 1998 地域開發論叢 Vol.10 No.-
This paper defines the conceptual and theoretical framework, operations, and success metrics for incubating and sustaining learning & innovation poles in technologically emerging and developing regions worldwide. There are three primary action oriented objectives: ·To establish learning networks within and among developing and emerging Innovation Poles in targeted geographic regions and to link these regions through ICT (information and communication technologies) and personal networks with each other and with select and more developed partner regions worldwide. ·To increase regionally-based abilities to put knowledge to work through the linking of talent, technology, capital, and know-how regionally and globally. ·To foster sustainable job and wealth creation for the targeted regions and to use these areas as learning laboratories and role models for additional regions worldwide. It appears that well-developed capabilities to learn - the abilities to put knowledge to work - are responsible for rapid catch-up.... The basic elements [to develop these learning abilities] appear to be skilled people, knowledge institutions, knowledge networks, and information and communications infrastructure. (The World Bank, 1997)
Electrical Spin Current Generation in Ferromagnets and Antiferromagnets
Vivek Amin,Fei Xue,Paul Haney,Mark Stiles 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.1
Electrical control of magnetic order has widespread applications for information and communications technology. One way to manipulate magnetic order in layered structures is to generate a spin current in a source layer that is absorbed by a nearby magnetic layer, causing a transfer of spin angular momentum or spin torque. Under an applied electric field, nonmagnetic, ferromagnetic, and antiferromagnetic materials all generate such spin currents. However, it is typically assumed that the spin torque occurs in a different layer than where the spin current was generated. For ferromagnetic and antiferromagnetic metals with appreciable spin-orbit coupling, conduction electrons can carry a substantial spin current flowing perpendicularly to the electric field with spin directions misaligned with the magnetic order parameter. In some cases, these symmetry-allowed spin currents can flow into the layer boundaries and exert substantial torques that can be measured through optical techniques such as MOKE. Thus, magnetic materials can be simultaneously the source and receiver of spin torques, suggesting a promising avenue to optimize electrical control of magnetic order. <br.>In this talk, I discuss several mechanisms to electrically generate spin currents in ferromagnets, antiferromagnets, and magnetic interfaces. Each mechanism can have a different dependence on magnetization direction, crystal structure, and/or disorder. While measurements of spin torques at layer boundaries provide evidence of spin current generation, disentangling contributions from spin currents and from other sources remains an open challenge. We present both first principles and semiclassical transport calculations giving the strength and magnetization dependence of electrically generated spin currents in magnetic systems via intrinsic and/or extrinsic mechanisms. Shedding light on these mechanisms could help optimize electrical control of magnetic order with potential applications for information processing.
Spin-orbit torques from interfacial spin-orbit coupling for various interfaces
Kim, Kyoung-Whan,Lee, Kyung-Jin,Sinova, Jairo,Lee, Hyun-Woo,Stiles, M. D. American Physical Society 2017 Physical review. B Vol.96 No.10
<P>We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a damping like component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.</P>