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Rajesh Kumar Kante,Silpa Somavarapu,Sandeep Vemula,Chandrika Kethineni,Maheshwara Reddy Mallu,Srinivasa Reddy Ronda 한국생물공학회 2019 Biotechnology and Bioprocess Engineering Vol.24 No.5
The recombinant human asparaginase (rhASP) plays an important role in the treatment of acute lymphoblastic leukemia. In the present work, volumetric mass transfer coefficient (kLa) values are derived from the E. coli cultivation under different agitation and aeration conditions, in order to improve the rhASP productivity. The aeration and agitation conditions were systematically optimized by the kLa. The maximum biomass (2.4 g/L) and rhASP (1.68 g/L) are achieved with the kLa of 0.024 s-1 at 1.5 lpm and 700 rpm process conditions. The kinetic properties of purified rhASP are also extensively studied and optimized for the maximal enzyme activity. The optimal pH, temperature and incubation duration conditions for accomplishing maximum enzyme activity are found to be 9.0, 40°C, and 30 min, respectively. The optimum substrate concentration and substrate specificity for the highest enzyme activity are of 0.07 M and L-asparagine, respectively. The enzyme activity (204 IU/mL) is significantly improved in the presence of sodium metal (Na+) ions and the inhibitors 2- mercaptoethanol, bromoacetic acid and urea have presented the highest inhibition rate on rhASP activity. The enzyme kinetic parameters Km and Vmax of the purified rhASP are recorded as 2.25 mM and 250 IU/mL, respectively. This work provides the extensive characteristic properties of rhASP enzyme, which enables us to place in a competition for the development of oncology drugs.
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Rajagopal Reddy, V.,Sri Silpa, D.,Yun, H.J.,Choi, C.J. Academic Press 2014 Superlattices and microstructures Vol.71 No.-
The electrical and structural properties of a fabricated W/p-InP Schottky barrier diode (SBD) have been investigated as a function of annealing temperature. The W/p-InP SBD exhibits good rectification behavior. The barrier height (BH) and ideality factor of the W/p-InP SBD are determined to be 0.82eV (I-V)/0.98eV (C-V) and 1.34, respectively. However, the BH is increases to 0.87eV (I-V)/1.08eV (C-V) after annealing at 300<SUP>o</SUP>C. When the SBD is annealed at 400<SUP>o</SUP>C, the BH decreases to 0.74eV (I-V)/0.86eV (C-V) and the ideality factor increases to 1.45. Results indicate that a maximum BH is obtained on the W/p-InP SBD at 300<SUP>o</SUP>C. Norde method is also employed to determine BHs of W/p-InP SBD which are in good agreement with those estimated by the I-V method. Further, Cheung method is used to estimate the series resistance of the W/p-InP SBD, and the consistency is checked using the Norde method. Besides, the energy distribution of interface state density is determined from the forward bias I-V data at different annealing temperatures. Auger electron spectroscopy and X-ray diffraction studies revealed that the formation of W-P interfacial phases at the W/p-InP interface may be the cause for the increase of BH upon annealing at 300<SUP>o</SUP>C. AFM results indicated that the overall surface morphology of the W/p-InP SBD did not change significantly at elevated temperatures.
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V. Rajagopal Reddy,D. Sri Silpa,V. Janardhanam,윤형중,최철종 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.1
The electrical, structural and surface morphological properties of Yb/p-InPSchottky barrier diode (SBD) have been investigated at different annealingtemperatures. The determined Schottky barrier height (SBH) and idealityfactor n of the as-deposited Yb/p-InP SBD are 0.68 eV (I-V)/0.81 eV(C-V)and 1.44 respectively. After annealing at 300°C, the SBH of Yb/p-InP SBDincreases to 0.72 eV (I-V)/0.88 eV (C-V). When the contact is annealed at400°C, the SBH slightly decreases to 0.67 eV (I-V)/0.80 eV (C-V). Theseresults reveal that the optimum annealing temperature for Yb/p-InP SBD is300°C. Cheung’s functions are also employed to determine the seriesresistance of the Yb/p-InP SBD. Using Terman’s method, the interface statedensity is estimated for Yb/p-InP SBD at different annealing temperatures. The XPS results reveal that the existence of phosphorous-rich surface afterthe annealing. The AES and XRD results showed that the formation ofphosphide phases at the Yb/p-InP interface may be the reason for theincrease of SBH after annealing at 300°C. The decrease in the BH afterannealing at 400°C may be due to the formation of indium phases at theinterface. The overall surface morphology of the Yb Schottky contact isfairly smooth at elevated temperatures.
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Data Outsourcing based on Secure Association Rule Mining Processes
V. Sujatha,Debnath Bhattacharyya,P. Silpa Chaitanya,Tai-hoon Kim 보안공학연구지원센터 2015 International Journal of Security and Its Applicat Vol.9 No.3
Data mining is the process of extracting information from data warehousing applications. Data outsourcing is the major task in present days, for accessing services and other features of the database processing. But sometimes this process may achieve to split among various parties with recommended data items in analyzing of the data. Data security is one of the key processes in outsourcing data to various outside users. Traditionally Fast Distribution Mining algorithm was proposed for securing distributed data. This paper addresses a problem by secure association rules over partitioned data in both horizontal and vertical representation. A secure frequency developed algorithm is used for doing above process efficiently in partitioned data, which includes services of the data in outsourcing process. Frequent item sets are used to access services in outsourcing data in recent application development data mining. Our proposed work maintains efficient security over vertical and horizontal view of representation in secure mining applications. The result shows that algorithm timing is desirable for big size data for security considerations using association rule mining operations in real time application development.
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