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Misaki Hanaoka,HIDEHIRO KANEDA,SHINKI OYABU,Yasuki Hattori,Kotomi Tanaka,Sota Ukai,Kazuyuki Shichi,Takehiko Wada,Toyoaki Suzuki,Kentaroh Watanabe,Koichi Nagase,Shunsuke Baba,Chihiro Kochi 한국천문학회 2017 天文學論叢 Vol.32 No.1
To realize large-format compact array detectors covering a wide far-infrared wavelength range up to 200 $\mu$m, we have been developing Blocked-Impurity-Band (BIB) type Ge detectors with the room-temperature surface-activated wafer bonding technology provided by Mitsubishi Heavy Industries. We fabricated various types of $p^+$-$i$ junction devices which possessed a BIB-type structure, and evaluated their spectral response curves using a Fourier transform spectrometer. From the Hall effect measurement, we also obtained the physical characteristics of the $p^+$ layers which constituted the $p^+$-$i$ junction devices. The overall result of our measurement shows that the $p^+$-$i$ junction devices have a promising applicability as a new far-infrared detector to cover a wavelength range of 100--200 μm.