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Kim, Sangsig,Sung, Man Young,Hong, Jinki,Lee, Moon-Sook The Korean Institute of Electrical and Electronic 2000 Transactions on Electrical and Electronic Material Vol.1 No.1
The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.
Gate All Around Metal Oxide Field Transistor
Faraz Najam,Sangsig Kim,Yun Seop Yu 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.5
An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.
Optically tunable feedback operation of silicon nanowire transistors
Lim, Doohyeok,Kim, Sangsig Institute of Physics 2019 Semiconductor science and technology Vol.34 No.11
<P>In this study, we present an optically tunable feedback field-effect transistor (FBFET) with two independent gates and a <I>p</I> <SUP> <I>+</I> </SUP> <I>-i-n</I> <SUP> <I>+</I> </SUP> silicon nanowire. Because of the feedback operation, the FBFET features extremely steep switching characteristics with subthreshold swings <4 mV dec<SUP>−1</SUP>, and it can be reconfigured as a <I>p</I>- or <I>n</I>-type transistor by controlling the gate-voltage biases. When the FBFET is exposed to a He–Ne laser beam (<I>λ</I>?=?633 nm), photogenerated carriers accumulate in the potential wells and reduce the potential-barrier height. The optically tunable feedback operation is attributed to the lowering of the potential barrier caused by the light. The triggering voltages can be modulated according to illumination, even when feedback is being provided. This optically tunable transistor with excellent switching characteristics opens up possibilities for application in future optoelectronic devices.</P>
Kim, Yoonjoong,Kim, Sangsig Institute of Physics 2018 Semiconductor science and technology Vol.33 No.10
<P>In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a <I>p</I> <SUP>+</SUP>–<I>i</I>–<I>n</I> <SUP>+</SUP> doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.</P>
Najam, Faraz,Kim, Sangsig,Yu, Yun Seop The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.5
An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.