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Structural and Optical Properties of TiO2 Films Prepared Using Reactive RF Magnetron Sputtering
Sang-HunJeong,Bong-SooKim,Byung-TeakLee,HyukRyulPark,Jae-KeunKim 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.1
Preparation of TiO2 lms having superior optical and structural characteristics was attempted using a conventional rf magnetron sputtering by modifying deposition variables, such as the substrate temperature and the gas composition in the sputtering ambient. TiO2 lms grown without O2 addition showed considerable optical loss due to the optical absorption by an oxygen deciency in the lm and the scattering by large surface roughness. However, TiO2 lms grown with O2 addition had a stoichiometric composition and a smooth surface morphology without optical loss. Substrate heating during deposition enhanced the packing density and crystallinity of the lm, and as a result, TiO2 lms with higher refractive index and better homogeneity could be obtained with substrate heating between 200 C and 400 C.
Fabrication of Novel Thin Film Diode with Multi-Step Anodic Oxidation and Post Heat-treatment
Sung-JeiHong,Chan-JaeLee,Dae-GyuMoon,Won-KeunKim,Jeung-InHan 한국전기전자재료학회 2002 Transactions on Electrical and Electronic Material Vol.3 No.4
Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.
Sung-KyuPark,Jeong-InHan,Dae-GyuMoon,Won-KeunKim 한국전기전자재료학회 2002 Transactions on Electrical and Electronic Material Vol.3 No.2
This paper gives the basic mechanical properties of indium-tin-oxide (ITO) films on polymer substrates which are exposed to externally and thermally induced bending force. By using modified Storney formula including triple layer structure and bulge test measuring the conductive changes of patterned ITO islands as a function of bending curvature, the mechanical stability of ITO films on polymer substrates was intensively investigated. The numerical analyses and experimental results show thermally and externally induced mechanical stresses in the films are responsible for the difference of thermal expansion between the ITO film and the substrate, and for substrate material and its thickness, respectively. Therefore, a gradually ramped heating process and an organic buffer layer were employed to improve the mechanical stability, and then, the effects of the buffer layer were also quantified in terms of conductivity-strain variations. As a result, it is uncovered that a buffer layer is also a critical factor determining the magnitude of mechanical stress and the layer with the Young‘s modulus lower than a specific value can contribute to relieving the mechanical stress of the films.
SR144528 as Inverse Agonist of CB2 Cannabinoid Receptor
김상근,Sang-KeunKim 대한수의학회 2002 Journal of Veterinary Science Vol.3 No.3
It is now ell established that several G protein-coupled receptors can signal without agonist stimulation(constitutive receptors).Inverse a g o n i s t s h a v e b e nshown to inhibit he activity of such constitutive Gprotein-coupled receptor signaling. Agonist activationof the Gi/o-coupled peripheral cannabinoid receptorCB2 normaly inhibits adenyl cyclase type V andstimulates adenylyl cyclase type I. Using transfectedan inverse agonist of CB2, leads to a reverse action(stimulation of adenyl cyclase V and inhibition ofadenylyl cyclase II). This inverse agonism of SR144528is dependent on the temperature, as wel as on theconcentration of the cDNA of CB2 transfected. Pertusistoxin blocked the regulation of adenylyl cyclaseactivity by SR 144528.
TFD Device With Symmetrical Structure of Flexible Electrode SubJect to Flexble Substrate
Chan-JaeLee,Sung-JeiHong,Won-KeunKim,Jeong-InHan 한국전기전자재료학회 2002 Transactions on Electrical and Electronic Material Vol.3 No.4
In this work, we test electrode material of TFD (Thin Film Diode) device subject to flexible substrate. Al, that is ductile metal, was proper for flexible electrode to fabricate flexible display. The fabricated devices had symmetric electrode structure on both sides of insulation layer. The electrode was made of ductile Al so as to reduce the mismatch of properties between the electrode and substrate. The TFD device was successfully fabricated applying our own etch-free process. Electrical properties were improved by post-annealing.