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Mizuk, R.,Bondar, A.,Adachi, I.,Aihara, H.,Asner, D. M.,Atmacan, H.,Aulchenko, V.,Aushev, T.,Ayad, R.,Badhrees, I.,Bakich, A. M.,Barberio, E.,Behera, P.,Bhardwaj, V.,Bhuyan, B.,Biswal, J.,Bobrov, A.,B American Physical Society 2016 Physical Review Letters Vol.117 No.14
<P>Using data collected with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider, we measure the energy dependence of the e(+)e(-) -> h(b)(nP)pi(+)pi(-) (n = 1, 2) cross sections from thresholds up to 11.02 GeV. We find clear gamma(10860) and gamma(11020) peaks with little or no continuum contribution. We study the resonant substructure of the gamma(11020) -> h(b)(nP)pi(+)pi(_) transitions and find evidence that they proceed entirely via the intermediate isovector states Z(b)(10610) and Z(b)(10650). The relative fraction of these states is loosely constrained by the current data: The hypothesis that only Z(b)(10610) is produced is excluded at the level of 3.3 standard deviations, while the hypothesis that only Z(b)(10650) is produced is not excluded at a significant level.</P>
Sato, Y.,Iijima, T.,Adamczyk, K.,Aihara, H.,Asner, D. M.,Atmacan, H.,Aushev, T.,Ayad, R.,Aziz, T.,Babu, V.,Badhrees, I.,Bakich, A. M.,Bansal, V.,Behera, P.,Bhardwaj, V.,Bhuyan, B.,Biswal, J.,Bonvicini American Physical Society 2016 Physical review. D Vol.94 No.7
<P>We report a measurement of the ratio R(D*) = B((B) over bar (0) -> D*(+)tau(-)(nu) over bar (tau))/B((B) over bar (0) -> D*(+)l(-)(nu) over bar (l))where l denotes an electron or a muon. The results are based on a data sample containing 772 x 10(6) B (B) over bar pairs recorded at the Upsilon(4S) resonance with the Belle detector at the KEKB e(+)e(-) collider. We select a sample of B-0(B) over bar (0) pairs by reconstructing both B mesons in semileptonic decays to D*(-/+)l(+/-). We measure R(D*) = 0.302 +/- 0.030(stat) +/- 0.011(syst), which is within 1.6 sigma of the Standard Model theoretical expectation, where the standard deviation sigma includes systematic uncertainties. We use this measurement to constrain several scenarios of new physics in a model-independent approach.</P>
Hirose, S.,Iijima, T.,Adachi, I.,Adamczyk, K.,Aihara, H.,Al Said, S.,Asner, D. M.,Atmacan, H.,Aushev, T.,Ayad, R.,Aziz, T.,Babu, V.,Badhrees, I.,Bakich, A. M.,Bansal, V.,Berger, M.,Bhardwaj, V.,Bhuyan American Physical Society 2018 Physical Review D Vol.97 No.1
<P>With the full data sample of 772 x 10(6) B (B) over bar pairs recorded by the Belle detector at the KEKB electron-positron collider, the decay (B) over bar -> D+ tau(-)(nu) over bar (tau) is studied with the hadronic tau decays tau(-) -> pi(-)nu(tau) and tau(-) -> rho(-)nu(tau). The tau polarization P-tau(D*) in two-body hadronic tau decays is measured, as well as the ratio of the branching fractions R(D*) = B((B) over bar -> D*tau(-) (nu) over bar (tau))/B((B) over bar -> D*l(-) (nu) over bar (l),where l(-) denotes an electron or a muon. Our results, P-tau (D*) = - 0.38 +/- 0.51(stat)(+0.21)(-0.16) (syst) and R(D*) = 0.270 +/- 0.035(stat)(+0.028)(-0.025)(syst), are consistent with the theoretical predictions of the standard model. The polarization values of P-tau(D*) > +0.5 are excluded at the 90% confidence level.</P>
Inclusive and exclusive measurements ofBdecays toχc1andχc2at Belle
Bhardwaj, V.,Miyabayashi, K.,Panzenbö,ck, E.,Trabelsi, K.,Frey, A.,Abdesselam, A.,Adachi, I.,Aihara, H.,Al Said, S.,Arinstein, K.,Asner, D. M.,Atmacan, H.,Aulchenko, V.,Aushev, T.,Ayad, R.,Babu, V American Physical Society 2016 Physical Review D Vol.93 No.5
<P>We report inclusive and exclusive measurements for chi(c1) and chi(c2) production in B decays. We measure B(B -> chi X-c1) = (3.03 +/- 0.05 (stat) +/- 0.24(syst)) x 10(-3) and B(B -> chi X-c2) = (0.70 +/- 0.06 (stat) +/- 0.10(syst)) x 10(-3). For the first time, chi(c2) production in exclusive B decays in the modes B-0 -> chi(c2) pi K--(+) and B-0 -> chi(c2) pi(-)pi K-+(+) has been observed, along with first evidence for the B-0 -> chi(c2) pi K--(s)0 decay mode. For chi c1 production, we report the first observation in the B+ -> chi(c1) pi(-)pi K-+(+), B-0 -> chi(c1) pi(-)pi K-+(s)0 and B-0 -> chi(c1) pi(-)pi K-+(+) decay modes. Using these decay modes, we observe a difference in the production mechanism of chi(c2) in comparison to chi(c1) in B decays. In addition, we report searches for X(3872) and chi(c1) (2P) in the B+ -> (chi(c1) pi(+)pi(-))K+ decay mode. The reported results use 772 x 10(6) B (B) over bar events collected at the Upsilon(4S) resonance with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider.</P>
Search for X(3872) and X(3915) decay into χc1π0 in B decays at Belle
Bhardwaj, V.,Jia, S.,Adachi, I.,Aihara, H.,Asner, D. M.,Aushev, T.,Ayad, R.,Babu, V.,Badhrees, I.,Bahinipati, S.,Bansal, V.,Behera, P.,Beleñ,o, C.,Berger, M.,Bhuyan, B.,Bilka, T.,Biswal, J.,Bobr American Physical Society 2019 Physical review. D Vol.99 No.11
Bhardwaj, Richa,Kaur, Baljeet,Singh, Jitendra Pal,Kumar, Manish,Lee, H.H.,Kumar, Parmod,Meena, R.C.,Asokan, K.,Hwa Chae, Keun,Goyal, Navdeep,Gautam, Sanjeev Elsevier 2019 APPLIED SURFACE SCIENCE - Vol.479 No.-
<P><B>Abstract</B></P> <P>In this study, X-ZnO/ZnO/Si(100) (X = Co, Ni and Cu) bilayer structure is fabricated using low energy ion implantation technique. Five different fluences 1 × 10<SUP>15</SUP>, 5 × 10<SUP>15</SUP>, 1 × 10<SUP>16</SUP>, 2.5 × 10<SUP>16</SUP> and 5 × 10<SUP>16</SUP> ions/cm<SUP>2</SUP> with 100 keV ion-beam energy were selected in order to implant the ions up to the depth of ≈44 nm as calculated through Stopping Range of Ion in Matter and Transport Range of Ions in Matter software. Structural modification was investigated by high resolution X-ray diffraction measurements in ZnO bilayer system. An observed systematic 2<I>θ</I> shift in (002) peak with increasing fluence implies increased density of implanted metal ions in ZnO matrix revealing the substitution of implanted ion at Zn-site. The mechanism of bilayer formation by ion-beam implantation technique has been discussed for metal-ions by investigating their interface properties. Atomic force microscopy reveals the morphological modification after ion implantation. Near-edge X-ray absorption fine-structure (NEXAFS) measurements at metal <I>K</I>- and <I>L</I> <SUB>3,2</SUB>-edges have been used to investigate the nature of implanted ions in terms of their valance state and local electronic environment. Further, O <I>K</I>-edge NEXAFS measurement for Ni-ZnO/ZnO/Si bilayer is highly sensitive to incident beam angles whereas no spectral change is seen for Zn <I>L</I>-edge measurements. The magnetic measurements were performed via vibrating sample magnetometer that showed the films are ferromagnetic at room temperature. The origin of ferromagnetism has been understood through defect mediated bound magnetic polaron model. Further, perpendicular magnetic anisotropy is also observed for Ni-ZnO/ZnO/Si bilayer structure at room temperature, which is correlated with the angle dependent O K-edge NEXAFS measurements. Fabrication of ZnO bilayer via ion implantation and investigation of above properties may prove useful in spin related and optoelectronic applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Observance of RTFM in metal ion-implanted Ni-ZnO/ZnO/Si bilayer </LI> <LI> HRXRD and NEXAFS measurements confirms the wurtzite phase and Zn<SUP>2+</SUP> substitution in ZnO matrix. </LI> <LI> Angle dependent NEXAFS measurements provides the evidence of observed PMA. </LI> </UL> </P> <P><B>Graphical Abstract</B></P> <P>Mechanism of ion beam interaction X (X = Co, Ni and Cu) with ZnO lattice forming X-ZnO/ZnO/Si(100) bilayer structure. Films were implanted using a multi cathode source of negative-ions by cesium sputtering (MC-SNICS) and with the increasing ion flux, X can undergo one of two mechanisms of either substituting the Zn-site or occupy interstitial position in ZnO matrix. Angle dependent O K-edge NEXAFS measurements provides the evidence of perpendicular magnetic anisotropy in ZnO bilayer. </P> <P>[DISPLAY OMISSION]</P>
Self assembled nanoparticle Pb1-xFexSe/single crystal Si heterojunctions
Asha Bhardwaj,V.R. Balakrishnan,P. Srivastava,H.K. Sehgal 한국물리학회 2010 Current Applied Physics Vol.10 No.1
Nanoparticle Pb1-xFexSe (0.00 6 x 6 0.16) thin films have been deposited on quartz, glass and silicon substrates by chemical bath deposition technique. Structural and optical properties of the films with iron concentration 0.00 6 x 6 0.16 indicate that the films grow as single-phase Pb1-xFexSe ternary alloys with rocksalt structure and with direct optical band gaps (Eg) that increase with decrease in grain size and have values larger than 0.28 eV of the bulk PbSe. Average grain size in films grown at fixed bath temperature Tb of 85 ℃ is observed to decrease from 72 to 22 nm whereas lattice parameter is observed to increase from 6.12 to 6.14 A with increase in Fe concentration from x = 0.00 to x = 0.16. The observed blue shift in film materials originates from quantum confinement in the nanograins. Nanoparticle Pb1-xFexSe/single crystal Si heterojunctions show rectifying behavior. On illumination of heterojunctions with visible light current is observed to increase in forward and reverse bias. This increase in current in the presence of visible light is considered to be due to carrier multiplication by Auger electron emission.
Observation ofX(3872)inB→X(3872)Kπdecays
Bala, A.,Bhardwaj, V.,Trabelsi, K.,Singh, J. B.,Abdesselam, A.,Adachi, I.,Aihara, H.,Arinstein, K.,Asner, D. M.,Aulchenko, V.,Aushev, T.,Ayad, R.,Aziz, T.,Bahinipati, S.,Bakich, A. M.,Bansal, V.,Barbe American Physical Society 2015 PHYSICAL REVIEW D - Vol.91 No.5