Differential effects of triterpene glycosides, frondoside A and cucumarioside A₂-2 isolated from sea cucumbers on caspase activation and apoptosis of human leukemia cells

Jin, J.O.,Shastina, V.V.,Shin, S.W.,Xu, Q.,Park, J.I.,Rasskazov, V.A.,Avilov, S.A.,Fedorov, S.N.,Stonik, V.A.,Kwak, J.Y. North-Holland Pub ; Elsevier Science Ltd 2009 FEBS letters Vol.583 No.4

Frondoside A is a pentaoside having an acetyl moiety at the aglycon ring and xylose as a third monosaccharide residue. Cucumarioside A<SUB>2</SUB>-2 is a pentaoside having glucose as a third monosaccahride unit. We compared the effects of frondoside A and A<SUB>2</SUB>-2 for cell death-inducing capability with close attention paid to structure-activity relationships. Both frondoside A and A<SUB>2</SUB>-2 strongly induced apoptosis of leukemic cells. Frondoside A-induced apoptosis was more potent and rapid than A<SUB>2</SUB>-2-induced apoptosis. A<SUB>2</SUB>-2-induced but not frondoside A-induced apoptosis was caspase-dependent. This suggests that holothurians may induce apoptosis of leukemic cells caspase-dependently or -independently, depending on the holothurian structure.

Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire

Polyakov, A.Y.,Smirnov, N.B.,Govorkov, A.V.,Markov, A.V.,Sun, Q.,Zhang, Y.,Yerino, C.D.,Ko, T.S.,Lee, I.H.,Han, J. Elsevier 2010 Materials science & engineering. B, Advanced funct Vol.166 No.3

Electrical properties, deep traps spectra and luminescence spectra were studied for two undoped a-plane GaN (a-GaN) films grown on r-plane sapphire using metalorganic chemical vapor deposition and differing by structural perfection. For sample A, the a-GaN film was directly deposited on AlN buffer. A two-step growth scheme was implemented for sample B, including an initial islanding growth stage and a subsequent enhanced lateral growth. Preliminary detailed X-ray analysis showed that the stacking faults density was 8x10<SUP>5</SUP>cm<SUP>-1</SUP> for sample A and 1.7x10<SUP>5</SUP>cm<SUP>-1</SUP> for sample B. Electrical properties of a-GaN films were largely determined by deep traps with a level near E<SUB>c</SUB> -0.6eV, with other prominent traps having the activation energy of 0.25eV. The Fermi level was pinned by the E<SUB>c</SUB> -0.6eV deep traps for sample A, but shifted to the vicinity of the shallower 0.25eV traps for sample B, most likely due to the reduced density of the 0.6eV traps. This decrease of deep traps density is accompanied by a very pronounced improvement in the overall luminescence intensity. A correlation of the observed improvement in deep traps spectra and luminescence efficiency with the improved crystalline quality of the films is discussed.

Salinity Tolerance of Blackgram and Mungbean 2 : Mineral Ions Accumulation in Different Plant Parts

P. K. Raptan,A. Hamid,Q. A. Khaliq,A. R. M. Solaiman,J. U. Ahmed,M. A. Karim 韓國作物學會 2001 Korean journal of crop science Vol.46 No.5

Blackgram (Vigna mungo) is more salt tolerant than mungbean (Vigna radiata). This study was initiated to know whether the accumulation pattern of mineral ions in different plant parts plays a significant role in the differences in salt tolerance between the two Vigna species. Different mineral ions, viz. N, Cl, Na, K, Mg and Ca in different organs of two varieties of each of blackgram- Barimash-l (susceptible one) and Barimash-2 (tolerant one), and mungbean-Barimung-3 (tolerant one) and Barimung-4(susceptible one), were analyzed after growing with 0, 50, 75 and 100 mM NaCl solutions. The two crops showed a decreased but similar pattern of total N accumulation under saline conditions. The tolerant variety of both the crops showed a less reduction in total N than the susceptible one. Leaves showed the maximum while stem the minimum N, irrespective of levels of salinity. C l[-10] and N a+ accumulation increased with the increasing salinity levels. Interestingly, similar to a halophyte, the salt tolerant blackgram exhibited conspicuously higher amount of N a+ in the shoot than the salt-susceptible mungbean. However, the tolerant varieties showed less amount of N a+ than the susceptible one, especially in blackgram. Seeds of both Vigna spp. accumulated the minimum amount of N a+ than other plant parts. K+ accumulation decreased by salinity in most of the plant parts, except seeds. Blackgram showed larger reduction in K than mungbean. The Mg++ increased in leaves, petioles and stem by salinity while decreased in the roots, podshells and seeds in both the crops. Salinity increased Ca++ accumulation in all plant-parts except roots of both Vigna spp. Apparently, the leaves of mungbean accumulated higher concentration of Ca++ than blackgram. Varietal differences in the accumulation pattern of K+ , Mg++ and Ca++ were not clear. It was concluded that blackgram, presumably, possesses a similar salt tolerance mechanism to halophyte, and the pattern of accumulation of mineral ions in blackgram and mungbean was not fully ascribed to the differences in salinity tolerance between the two Vigna species.gna species.ies.s.ies.

Wafer-Level Three-Dimensional Monolithic Integration for Intelligent Wireless Terminals

R.J.Gutmann,A.Y.Zeng,S.Devarajan,J.-Q.Lu,K.Rose 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.3

A three-dimensional (3D) IC technology platform is presented for high-performance. low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-safer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-nafer via test structure, and compatibility of the proce.. .teps "ith 130 nm CMOS SOl devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wfireless terminalss as vertical integration of processor, large memors, image sensors and RF/microwawe transceiwers can be achieved with silicon-based ICs (Si CMOS and/or SiCe BiCMOS). Two esamples of such capability are<br/> highlighted memory-intenshe Si CCYIOS digital<br/> processors with large L2 caches and SiGe BiCMS pipelined A/D converters. A comparison of wafer-level 3D integration with system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.<br/> Index Terms-3D Integration, wafer bonding, intelligent wireless terminal, memory-intensive digital processors, pipelined A/D converters<br/>

Wafer-Level Three-Dimensional Monolithic Integration for Intelligent Wireless Terminals

Gutmann, R.J.,Zeng, A.Y.,Devarajan, S.,Lu, J.Q.,Rose, K. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.3

A three-dimensional (3D) IC technology platform is presented for high-performance, low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-wafer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-wafer via test structures and compatibility of the process steps with 130 nm CMOS sal devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wireless terminals, as vertical integration of processor, large memory, image sensors and RF/microwave transceivers can be achieved with silicon-based ICs (Si CMOS and/or SiGe BiCMOS). Two examples of such capability are highlighted: memory-intensive Si CMOS digital processors with large L2 caches and SiGe BiCMOS pipelined A/D converters. A comparison of wafer-level 3D integration 'lith system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.

투약대기시간 단축활동

영남대학교의료원 약제부 Q.A소위원회 한국의료QA학회 1998 가을학술대회 Vol.1998 No.-

Comparative proteomics and global genome-wide expression data implicate role of ARMC8 in lung cancer

Amin, Asif,Bukhari, Shoiab,Mokhdomi, Taseem A,Anjum, Naveed,Wafai, Asrar H,Wani, Zubair,Manzoor, Saima,Koul, Aabid M,Amin, Basit,Qurat-ul-Ain, Qurat-ul-Ain,Qazi, Hilal,Tyub, Sumira,Lone, Ghulam Nabi,Q Asian Pacific Journal of Cancer Prevention 2015 Asian Pacific journal of cancer prevention Vol.16 No.9

Background: Cancer loci comprise heterogeneous cell populations with diverse cellular secretions. Therefore, disseminating cancer-specific or cancer-associated protein antigens from tissue lysates could only be marginally correct, if otherwise not validated against precise standards. Materials and Methods: In this study, 2DE proteomic profiles were examined from lysates of 13 lung-adenocarcinoma tissue samples and matched against the A549 cell line proteome. A549 matched-cancer-specific hits were analyzed and characterized by MALDI-TOF/MS. Results: Comparative analysis identified a total of 13 protein spots with differential expression. These proteins were found to be involved in critical cellular functions regulating pyrimidine metabolism, pentose phosphate pathway and integrin signaling. Gene ontology based analysis classified majority of protein hits responsible for metabolic processes. Among these, only a single non-predictive protein spot was found to be a cancer cell specific hit, identified as Armadillo repeat-containing protein 8 (ARMC8). Pathway reconstruction studies showed that ARMC8 lies at the centre of cancer metabolic pathways. Conclusions: The findings in this report are suggestive of a regulatory role of ARMC8 in control of proliferation and differentiation in lung adenocarcinomas.

Direct observation of asymmetric domain wall motion in a ferroelectric capacitor

Lee, J.K.,Shin, G.Y.,Song, K.,Choi, W.S.,Shin, Y.A.,Park, S.Y.,Britson, J.,Cao, Y.,Chen, L.Q.,Lee, H.N.,Oh, S.H. Elsevier Science 2013 ACTA MATERIALIA Vol.61 No.18

We report in situ transmission electron microscopy observations of the 180<SUP>o</SUP> polarization switching process of a PbZr<SUB>0.2</SUB>Ti<SUB>0.8</SUB>O<SUB>3</SUB> (PZT) capacitor. The preferential, but asymmetric, nucleation and forward growth of switched c-domains were observed at the PZT/electrode interfaces, arising due to the built-in electric field induced at each interface. The subsequent sideways growth of the switched domains was inhibited by the depolarization field due to the imperfect charge compensation at the counter-electrode and also at the boundaries with preexisting a-domains, which contributed further to the asymmetric switching behavior. It was found that the preexisting a-domains split into fine a- and c-domains constituting a 90<SUP>o</SUP> stripe domain pattern during the 180<SUP>o</SUP> polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

Induced quadrupolar singlet ground state of praseodymium in a modulated pyrochlore

van Duijn, J.,Kim, K. H.,Hur, N.,Ruiz-Bustos, R.,Adroja, D. T.,Bridges, F.,Daoud-Aladine, A.,Fernandez-Alonso, F.,Wen, J. J.,Kearney, V.,Huang, Q. Z.,Cheong, S.-W.,Perring, T. G.,Broholm, C. American Physical Society 2017 Physical Review B Vol.96 No.9

<P>The complex structure and magnetism of Pr2-xBixRu2O7 was investigated by neutron scattering and extended x-ray absorption fine structure. Pr has an approximate doublet ground state and the first excited state is a singlet. While the B-site (Ru) is well ordered throughout, this is not the case for the A-site (Pr/Bi). A broadened distribution for the Pr-O-2 bond length at low temperature indicates the Pr environment varies from site to site even for x = 0. The environment about the Bi site is highly disordered ostensibly due to the 6s lone pairs on Bi3+. Correspondingly, we find that the non-Kramers doublet ground-state degeneracy, otherwise anticipated for Pr in the pyrochlore structure, is lifted so as to produce a quadrupolar singlet ground statewith a spatially varying energy gap. For x = 0, below TN, the Ru sublattice orders antiferromagnetically, with propagation vector k = (0,0,0) as forY(2)Ru(2)O(7). No ordering associated with the Pr sublattice is observed down to 100 mK. The low-energy magnetic response of Pr2-xBixRu2O7 features a broad spectrum of magnetic excitations associated with inhomogeneous splitting of the Pr quasidoublet ground state. For x = 0 (x = 0.97), the spectrum is temperature dependent (independent). It appears disorder associated with Bi alloying enhances the inhomogeneous Pr crystal-field level splitting so that intersite interactions become irrelevant for x = 0.97. The structural complexity for the A-site may be reflected in the hysteretic uniform magnetization of B-site ruthenium in the Neel phase.</P>

智慧

A. 바뮠(Andre BARU@Q),P. 그럴로(Pierr GRELOT),김수복(번역자) 광주가톨릭대학교 신학연구소 1973 神學展望 Vol.- No.22