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Structural and optical properties of pulsed laser deposited ZnO thin films
E. Fazio,S. Patanè,S. Scibilia,A.M. Mezzasalma,G. Mondio,F. Neri,S. Trusso 한국물리학회 2013 Current Applied Physics Vol.13 No.4
Nanocrystalline ZnO thin films were grown by means of pulsed laser deposition. The ablation process was carried out at relatively low background oxygen gas pressure (10 Pa) and by varying the substrate temperature up to 600 C. Information on the structural and morphological properties of the deposited thin films have been obtained by means of X-ray photoelectron, Raman spectroscopies, X-ray diffraction (XRD) and atomic force microscopy (AFM). The results showed that all the deposited films are substoichiometric in oxygen and with a hexagonal wurtzite crystalline structure, characterized by features of some tens of nanometers in size. An improvement of the films’ crystalline quality was observed for the deposition temperature of 300 ℃ while the further increase of the deposition temperature up to 600℃ induces a worsening of the material’s structural properties with the development of a large amount of nanoparticle’s clusters. The analysis of the XRD patterns shows a growth crystallographic preferential direction as a function of the deposition temperature, in agreement with the appearance of the only E2 optical phonon mode in the Raman spectra. Such findings are compatible with the changes observed in the photoluminescent (PL) optical response and was related to the modification of the ZnO thin film structural quality.
Nour El Islam Boukortt,Baghdad Hadri,Alina Caddemi,Giovanni Crupi,Salvatore Patanè 한국전기전자재료학회 2016 Transactions on Electrical and Electronic Material Vol.17 No.6
In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triplegate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator ATLAS™ wasused to construct, examine, and simulate the structure in three dimensions with different models. The drain current,transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electricalparameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance ofsome basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These resultsmight be useful for further development of devises to strongly down-scale the manufacturing process.
3-D Simulation of Nanoscale SOI n-FinFET at a Gate Length of 8 nm Using ATLAS SILVACO
Nour El Islam Boukortt,Baghdad Hadri,Alina Caddemi,Giovanni Crupi,Salvatore Patanè 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.3
In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects of variations of the device’s key electrical parameters, such as threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, oncurrent, leakage current and on/off current ratio are presented and analyzed. We will also describe some simulation results related to the influence of the gate work function variations on the considered structure. These variations have a direct impact on the electrical device characteristics. The results show that the threshold voltage decreases when we reduce the gate metal work function Φm. As a consequence, the behavior of the leakage current improves with increased Φm. Therefore, the short channel effects in real 3-D FinFET structures can reasonably be controlled and improved by proper adjustment of the gate metal work function.
Patan Muzeeb Khan,Raja K.,Azaharahmed Mohammed,Prasad Ch. Durga,Ganeshan P. 대한전기학회 2021 Journal of Electrical Engineering & Technology Vol.16 No.2
Along with the power demand variations, change in wind speed and irradiance leads to large frequency oscillations especially in case of isolated microgrid integrated with PV and wind power generating units. To minimize such frequency changes, proportional plus integral (PI) and proportional, integral, and derivative (PID) controllers are set up for controllable generating units of isolated microgrid. However, this paper introduced primary regulation concept for diesel generator (DG) along with PI/PID controller mechanism which enhances overall system stability and minimize the frequency oscillations during the initial stages of load/power changes. Also, the choice of PI and PID controllers is introduced in this paper when the DG’s in microgrid equipped with primary regulation loop along secondary control and only secondary control without primary loop as extension of frequency control. The investigations are carried out in regular load change and generation change patterns along with irregular stochastic models. Crow search optimization algorithm (CSOA) provide fi ne controller parameters in both cases and results carried out in MATLAB-SIMULINK environment
Mohammed Azaharahmed,K. Raja,Muzeeb Khan Patan,Ch. Durga Prasad,P. Ganeshan 대한전기학회 2021 Journal of Electrical Engineering & Technology Vol.16 No.1
Frequency disturbances caused by load perturbations of multi area interconnected power system are reduced by using proper control schemes provided via secondary control loop along with primary control of generation plants. These secondary controllers provide simultaneous control signal to individual machines of a particular area when the control scheme is area centralized. This area centralized mechanism provides quick control action with less computational burden since control problem dimensions gets reduced even the area consists multiple plants/machines. Such centralized new cascade control scheme is proposed in this paper to supervise the secondary control mechanism and it is implemented with parallel connection of 2-Degree of Freedom Proportional-Integral-Derivative (2-DOF PID) controller combined with regular PID controller. The performance of this new controller is studied on multi area multi machine interconnected power system with participation factor concept and later its relative performance in terms of dynamic and steady state specifi cations are compared with conventional PID and 2-DOF PID controllers. These control parameters are tuned by Invasive Weed Optimization (IWO) algorithm to achieve better system outputs. Case studies presented in this paper show the advantages of proposed control scheme.
Boukortt, Nour El Islam,Hadri, Baghdad,Caddemi, Alina,Crupi, Giovanni,Patane, Salvatore The Korean Institute of Electrical and Electronic 2016 Transactions on Electrical and Electronic Material Vol.17 No.6
In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triple gate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator $ATLAS^{TM}$ was used to construct, examine, and simulate the structure in three dimensions with different models. The drain current, transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electrical parameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance of some basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These results might be useful for further development of devises to strongly down-scale the manufacturing process.
3-D Simulation of Nanoscale SOI n-FinFET at a Gate Length of 8 nm Using ATLAS SILVACO
Boukortt, Nour El Islam,Hadri, Baghdad,Caddemi, Alina,Crupi, Giovanni,Patane, Salvatore The Korean Institute of Electrical and Electronic 2015 Transactions on Electrical and Electronic Material Vol.16 No.3
In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects of variations of the device’s key electrical parameters, such as threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, oncurrent, leakage current and on/off current ratio are presented and analyzed. We will also describe some simulation results related to the influence of the gate work function variations on the considered structure. These variations have a direct impact on the electrical device characteristics. The results show that the threshold voltage decreases when we reduce the gate metal work function Φ<sub>m</sub>. As a consequence, the behavior of the leakage current improves with increased Φ<sub>m</sub>. Therefore, the short channel effects in real 3-D FinFET structures can reasonably be controlled and improved by proper adjustment of the gate metal work function.