토속종교가 베트남 사람들의 생활문화에 끼친 영향

Ngo Van Le 조선대학교 국제문화연구원 2009 국제문화연구 Vol.2 No.1

Mekong delta is the largest delta in Vietnam with an area of 39000㎢, or 12% of the country’s. Therefore, the delta, together with Hochiminh City, has been and will be playing a very crucial role in Vietnam’s cultural-economic development strategies. Yet, while Mekong delta is a fairly new land in comparison with our nation’s long history, it has been a “promise land” or a “land of hope” to many migrants who have migrated to and resided over the delta in their pursuing of wealth and happiness. Many generations of the Vietnamese, side by side with other ethnic peoples, have exploited and protected the region which resulted in several magical achievements during wars against foreign invaders as well as in peace time. Mekong Delta is resided by multi-ethnic peoples. These peoples, who are different in terms of economic development level, social structure and religion, have come to existence over the land at different time points. However, through long history of co-residence, due to cultural exchange and acculturation, among the peoples there have emerged many common cultural features and this process is currently still on progress under proactive influences of modern circumstance. As a result, there have been many religions in the delta; besides world religions such as Buddhism, Christianity, and Islam, there have existed local religions. Obviously, these religions contribute greatly to the cultural diversity of the whole southern part of the country. The Vietnamese is a majority people in the region. The culture of the Vietnamese in Mekong delta has selectively inherited cultural values of Vietnamese tradition. During their residing in the delta, the people has also adopted and created cultural features that are adaptative to natural and social environment of the region. For instance, at the end of 19^(th) century and early 20^(th) century, the Vietnamese in Mekong delta created several religions with ubiquitous local identities. In general, local religions have played very crucial roles in the life of the Vietnamese in the delta; however, their impacts have seldom spread out of the Vietnamese communities. In this paper, by viewing religion as both a social phenomenon and a cultural one, I concentrate on proposing the reasons for the birth of local religions of the Vietnamese in Southern Vietnam at the end of 19^(th) and early 20^(th) century. Also, I want to take a look at these religions’ impacts over cultural life of the people in the region. Assumedly, they were born under specific conditions of the South and only have impacts upon the life of the people. Furthermore, the paper proposes that, on one hand, the Vietnamese in the South have selectively inherited traditional cultural values which have created Vietnamese cultural values as the whole; on the other hand, they have made their own ones within the context of their new living conditions.

Microstructural, chemical states and electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer

Balaram, N.,Rajagopal Reddy, V.,Sekhar Reddy, P.R.,Janardhanam, V.,Choi, Chel-Jong Elsevier 2018 Vacuum Vol.152 No.-

<P><B>Abstract</B></P> <P>Cupric oxide (CuO) is synthesized by simple chemical bath deposition method and deposited on n-type InP substrate using e-beam evaporation technique. First, the structural and chemical compositional analysis of CuO/n-InP are analysed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRD and XPS results confirmed that the formation of CuO on n-type InP substrate. Then, Au/CuO/n-InP heterojunction is fabricated with a CuO interlayer and correlated its results with the Au/n-InP Schottky junction (SJ). The barrier height (Φ<SUB>b</SUB>) and ideality factor (n) are extracted through I-V and C-V methods and the respective values are 0.66 eV (I-V)/0.80 eV (C-V) and 1.24, and 0.78 eV (I-V)/0.94 eV (C-V) and 1.62 for the SJ and HJ diodes, respectively. By applying Cheung's and Norde functions, the Φ<SUB>b</SUB>, ideality factor and series resistance (R<SUB>S</SUB>) are derived for the SJ and HJ diodes. The derived interface state density (N<SUB>SS</SUB>) of HJ is lower than the SJ; results demonstrated that the CuO interlayer plays an important role in the decreased N<SUB>SS</SUB>. The Poole-Frenkel emission is the dominant current conduction mechanism in reverse bias of both SJ and HJ diodes.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Structural and chemical properties of CuO films are analysed by XRD and XPS. </LI> <LI> Barrier height of Au/n-InP SJ was modified by CuO interlayer. </LI> <LI> Heterojunction has a good rectification ratio compared to the Schottky junction. </LI> <LI> The interface state density of HJ is lower as compared to the SJ. </LI> <LI> Poole-Frenkel mechanism is found to dominate in both SJ and HJs. </LI> </UL> </P>

Measurement of the higher-order anisotropic flow coefficients for identified hadrons in Au + Au collisions at_sNN=200GeV

Adare, A.,Afanasiev, S.,Aidala, C.,Ajitanand, N. N.,Akiba, Y.,Al-Bataineh, H.,Alexander, J.,Aoki, K.,Aramaki, Y.,Atomssa, E. T.,Averbeck, R.,Awes, T. C.,Azmoun, B.,Babintsev, V.,Bai, M.,Baksay, G.,Bak American Physical Society 2016 Physical Review C Vol.93 No.5

<P>Measurements of the anisotropic flow coefficients v(2){Psi(2)}, v(3){Psi(3)}, v(4){Psi(4)}, and v(4){Psi(2)} for identified particles (pi(+/-), K-+/-, and p + (p) over bar) at midrapidity, obtained relative to the event planes Psi(m) at forward rapidities in Au + Au collisions at root s(NN) = 200 GeV, are presented as a function of collision centrality and particle transverse momenta p(T). The v(n) coefficients show characteristic patterns consistent with hydrodynamical expansion of the matter produced in the collisions. For each harmonic n, a modified valence quark-number N-q scaling [plotting v(n){Psi(m)}/(N-q)(n/2) versus transverse kinetic energies (KET)/N-q] is observed to yield a single curve for all the measured particle species for a broad range of KET. A simultaneous blast-wave model fit to the observed v(n){Psi(m)}(p(T)) coefficients and published particle spectra identifies radial flow anisotropies rho(n){Psi(m)} and spatial eccentricities s(n){Psi(m)} at freeze-out. These are generally smaller than the initial-state participant-plane geometric eccentricities epsilon(n){Psi(PP)(m)} as also observed in the final eccentricity from quantum interferometry measurements with respect to the event plane.</P>

Neutron-Induced Activation Cross Sections on Hafnium Isotopes from the Threshold to 20 MeV

V. Semkova,N. Janeva,N. Koyumdjieva,R. Jaime Tornin,A. Moens,A. J. M. Plompen,K. Volev 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.23

Results of new cross section measurements are presented for the following neutron-induced reactions: ^(178)Hf(n,α)^(175)Yb, ^(180)Hf(n,α)^(177)Yb, ^(177)Hf(n,p)^(177)Lu^g, ^(178)Hf(n,x)^(177)Lu^g, ^(180)Hf(n,p)^(180)Lu, ^(180)Hf(n,n'α)^(180)Hf^m, ^(174)Hf(n,2n) ^(173)Hf, ^(176)Hf(n,2n)^(175)Hf, and ^(177)Hf(n,3n)^(175)Hf obtained with the activation technique. The irradiations were carried out at the 7-MV Van de Graaff accelerator at IRMM, Geel. Quasi monoenergetic neutrons with energies between 14.8 and 20.5 MeV were produced via the ^3H(d,n)^4He reaction at E_d = 1, 1.4, 2, 3, and 4 MeV. The ^3H(p,n)^3He reaction was employed for the production of neutrons in the 2 - 3 MeV energy range. Both natural and enriched samples were used to facilitate correction for interference between reactions leading to the same product. The radioactivity of the samples was determined by standard γ-ray spectrometry using HPGe detector. The current measurements are compared with the data from other authors and Evaluated Nuclear Data Files. Cross sections for three of the studied reactions are reported for the first time.

Effects of high-k zirconium oxide (ZrO₂) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode

Balaram, N.,Reddy, M. Siva Pratap,Reddy, V. Rajagopal,Park, Chinho Elsevier 2016 THIN SOLID FILMS - Vol.619 No.-

<P><B>Abstract</B></P> <P>The structural, chemical, electrical and carrier transport properties of high-k ZrO<SUB>2</SUB> on n-type InP with Au electrode have been studied by <U>X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS)</U>, current-voltage (IV) and capacitance-voltage (CV) techniques at room temperature. Results show that the high barrier height is achieved for the Au/ZrO<SUB>2</SUB>/n-InP metal-insulator-semiconductor (MIS) diode as compared to the Au/n-InP metal-semiconductor (MS) diode. Using Cheung's functions, the barrier height, ideality factor and series resistance are estimated for the MS and MIS diodes. The barrier heights are determined by IV, Cheung's and surface potential-forward voltage plot for both the MS and MIS diodes which are found to be in good agreement with each other. Results indicate that the interface state density of Au/ZrO<SUB>2</SUB>/n-InP MIS diode is lower than that of Au/n-InP MS diode. This may be attributed to the fact that the introduction of the high-k ZrO<SUB>2</SUB> interlayer led to reduction of the interface state density in the Au/n-InP MS diode. Results indicate that the Poole-Frenkel emission is the dominant conduction mechanism in the lower bias region while Schottky emission is dominant in the higher bias region for both the Au/n-InP MS and Au/ZrO<SUB>2</SUB>/n-InP MIS diodes.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Effect of high-k ZrO<SUB>2</SUB> interlayer on electrical properties of Au/n-InP MS diode has been studied. </LI> <LI> High barrier height is obtained for Au/ZrO<SUB>2</SUB>/n-InP MIS diode compared to the MS diode. </LI> <LI> Interface state density of Au/ZrO<SUB>2</SUB>/n-InP MIS diode is lower than that of Au/n-InP MS diode. </LI> <LI> Transport properties of Au/n-InP MS and Au/ZrO<SUB>2</SUB>/n-InP MIS diodes have been investigated. </LI> </UL> </P>

Advanced Evaluation of ^(237)Np and ^(243)Am Neutron Data

V. M. Maslov,N. A. Tetereva,V. G. Pronyaev,T. Granier,F.-J. Hambsch 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.23

The diverse measured data base of n+^(237)Np is evaluated using a generalized least squares code and statistical theory of nuclear reactions. Consistent description of the total, fission and partial inelastic scattering data in 1 - 3 MeV energy range provides an important constraint for the absorption cross section. Important constraints for the measured capture cross section come from the average radiation S0 and S1 strength functions. An abrupt change of the inelastic data shape at En ∼ 1.5 MeV is explained by the sharp increase of the level density of the residual odd-even nuclide ^(237)Np due to the onset of three-quasi-particle excitations. The in fluence of exclusive (n, xnf) pre-fission neutrons on prompt fission neutron spectra and (n, xn) reactions spectra is modeled. Contributions of emissive/non-emissive fission and exclusive spectra of (n, xnf) reactions are defined by a consistent description of the ^(237)Np(n, F), ^(237)Np (n, 2n)^(236s)Np reactions and the ratio of the yields of short-lived isomer (1^-) and long-lived ground (6^-) ^(236)Np states measured at ∼14 MeV. The isomer ratio of the yields of short-lived ground (1^-) ^(242g)Am and long-lived isomer (5^-) ^(242m)Am states in ^(243)Am(n, 2n) reaction is calculated modeling the gamma-decay of the possible Gallaher-Moshkowski doublet states of ^(242) Am.

Electrical properties of a Cu-germanide Schottky contact to n-type Ge depending on its microstructural evolution driven by rapid thermal annealing

Janardhanam, V.,Jyothi, I.,Lee, J.H.,Yun, H.J.,Won, J.,Lee, Y.B.,Lee, S.N.,Choi, C.J. Elsevier Sequoia 2017 THIN SOLID FILMS - Vol.632 No.-

The electrical properties of Cu-germanide(Cu<SUB>3</SUB>Ge)/n-type Ge Schottky contacts formed as a result of a solid state reaction between Cu and n-type Ge were investigated as a function of the rapid thermal annealing (RTA) temperature and correlated with its microstructural evolution driven by the RTA process. The variations of the barrier height of Cu<SUB>3</SUB>Ge/n-type Ge Schottky rectifiers caused by the RTA process were determined using current-voltage (I-V) and capacitance-voltage (C-V) methods. The Cu<SUB>3</SUB>Ge film formed after annealing at 400<SUP>o</SUP>C exhibited a relatively uniform surface and interface morphology. This led to the formation of a laterally homogenous Schottky barrier in the Cu<SUB>3</SUB>Ge/n-type Ge Schottky diode, resulting in an improvement of its rectifying I-V behavior. On the other hand, after annealing above 500<SUP>o</SUP>C, the Cu<SUB>3</SUB>Ge film was severely agglomerated without film continuity and eventually evolved into isolated islands at 600<SUP>o</SUP>C. Such structural degradation of Cu<SUB>3</SUB>Ge led to a rapid decrease in the barrier height and an increase in the reverse leakage current of the Cu<SUB>3</SUB>Ge/n-type Ge Schottky diode. The electric field dependence of the reverse current showed that the reverse leakage current in the Cu<SUB>3</SUB>Ge/n-type Ge Schottky diodes was dominated by a Poole-Frenkel emission mechanism, regardless of the RTA temperatures.

Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric Materials in 5 nm Technology: A Simulation Study

M. V. Ganeswara Rao,N. Ramanjaneyulu,Balamurali Pydi,Umamaheshwar Soma,K. Rajesh Babu,Satti Harichandra Prasad 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.6

The rapid advancement in nanoscale devices demands innovative gate dielectric materials to replace traditional Silicon dioxide. This paper investigates the electrical behavior and performance of a dual-gate FinFET employing different high-K gate dielectric materials (Silicon dioxide, Hafnium oxide, Titanium oxide) through ATLAS 2D simulation in 5 nm technology. We analyze how these high-K gate dielectric materials influence the device, focusing on performance enhancement. The study highlights various key performance parameters (ION, IOFF, gm, gds, RON, TF, EV, V IL, V IH, NML, NMH) and reveals a significant performance improvement with HfO2 dielectric material in the proposed Dual-Gate FinFET. Achieving impressive performance parameters ( ION : 21.59 mA, IOFF : 21 µA, Maximum net Electric field: 1221290 V/cm, g m(max) : 0.05187 S, gds(max) : 0.03462 S, RON(max) : 25.93 kΩ , TFmax: 5.02, G ainmax : 90.233, EVmax : 67.532 V, V IL : 0.21 V, V IH : 0.4 V, NML : 198 V, NMH : 600 V), this paper provides valuable insights for designing high-performance devices with HfO2 dielectric material.

SUBNATIONAL DYNAMICS IN NORTH AMERICA: PARADIPLOMACY OF CANADIAN PROVINCES

Víctor Hugo Guzmán Horta(Víctor Hugo Guzmán Horta ) 한국캐나다학회 2022 Asia-Pacific Journal of Canadian Studies (APJCS) Vol.28 No.2

Breeding of Productive Bivoltine Hybrid, CSR16 x CSR17 of Silkworm Bombyx mori L.

N. Mal Reddy,G.V. Kalpana,S. B. Dandin,R. K. Datta,H. K. Basavaraja,N. Suresh Kumar,P. G. Joge 한국잠사학회 2004 International Journal of Industrial Entomology Vol.8 No.2

The breeding work was initiated by utilizing two Japanese hybrids namely C135 ´ N134 and N137 ´ C146 along with two evolved Indian breeds, J14 and A24. The breed CSR16 which is characterized with marked larvae and white dumbbell cocoons was evolved from the Japanese hybrid C135 ´ N134 by crossing with J14, while the breed CSR17 which is characterized with plain larvae and white oval cocoons was evolved from the Japanese hybrid N137 ´ C146 by crossing with A24. The hybrid of these evolved breeds i.e., CSR16 ´ CSR17 has shown superior over control hybrid KA ´ NB4D2 and on par with the ruling hybrid of CSR2 ´ CSR4. The hybrid CSR16 ´ CSR17 was authorized during 1999 by Central Silk Board, Bangalore, Government of India for commercial exploitation during favourable months based on national level race authorization test.