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Minkyong Kim,David Kotz 한국정보과학회 2011 Journal of Computing Science and Engineering Vol.5 No.1
Pervasive applications such as digital memories or patient monitors collect a vast amount of data. One key challenge in these systems is how to extract interesting or unusual information. Because users cannot anticipate their future interests in the data when the data is stored, it is hard to provide appropriate indexes. As location-tracking technologies, such as global positioning system, have become ubiquitous, digital cameras or other pervasive systems record location information along with the data. In this paper, we present an automatic approach to identify unusual data using location information. Given the location information, our system identifies unusual days, that is, days with unusual mobility patterns. We evaluated our detection system using a real wireless trace, collected at wireless access points, and demonstrated its capabilities. Using our system, we were able to identify days when mobility patterns changed and differentiate days when a user followed a regular pattern from the rest. We also discovered general mobility characteristics. For example, most users had one or more repeating mobility patterns, and repeating mobility patterns did not depend on certain days of the week, except that weekends were different from weekdays.
The Religious Approach to Tax Burden
Inchul Kim,MinKyong Ko 한국공공정책학회 2009 공공정책연구 Vol.16 No.1
It seems fairly common on earth that people resist against taxation. Nevertheless the historical record of recent times indicates that the tax burden has been constantly increasing. In this paper we develop a simple model of donation to explain how and when tax payers reduce or increase their tax payment and we attempt to identify factors that would induce tax payers to willingly accept their increasing tax burden.
Kim, Youngjun,Chang, Mincheol,Cho, Seongeun,Kim, Minkyong,Kim, Hyunsik,Choi, Eunsoo,Ko, Hyungduk,Hwang, Jinha,Park, Byoungnam Elsevier 2019 JOURNAL OF ALLOYS AND COMPOUNDS Vol.804 No.-
<P><B>Abstract</B></P> <P>We report enhancement of mobility and increase in mobile carrier concentration in zinc oxide (ZnO) nanocrystal (NC) field effect transistors (FETs) through the formation of a homo-junction interface using atomic layer deposition (ALD) passivation. An ultrathin ALD-ZnO passivation film deposited on a ZnO NC film not only increased the FET mobility from 4.6ⅹ10<SUP>−6</SUP> to 1.4ⅹ10<SUP>−4</SUP> cm<SUP>2</SUP>/V but also caused earlier turn-on of the ZnO NC FETs, shifting the threshold voltage from 18.9 to −4.6 V. The enhanced FET mobility and earlier turn-on in the FET are attributed to reduced localized state density on the ZnO NC surface through ALD-ZnO passivation. Passivation of the surface states mitigates carrier depletion in the ZnO NC film through oxygen adsorption on the ZnO surface. We also observed that the presence of saturation of the drain in a high drain-source voltage region depends on the ALD-ZnO passivation and its origin is discussed.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We formed a ZnO-NC/ZnO-ALD planar-homojunction interface, passivating the surface. </LI> <LI> Carrier mobility in the accumulation layer was enhanced by surface passivation. </LI> <LI> Suppression of surface depletion by ALD are crucial in assembling devices. </LI> </UL> </P>
Park, Byoungnam,Ko, Hyungduk,Kim, Minkyong Elsevier 2019 PHYSICA B-CONDENSED MATTER - Vol.553 No.-
<P><B>Abstract</B></P> <P>Understanding correlation between interfacial charge transfer and transport at the electron donor/acceptor functional interface has remained elusive despite its impact on the optoelectronic devices because the conventional vertically stacked diode structure as well as energetic and morphological disorder at the interface complicates analysis of the interfacial region. We fabricated a test platform to enable simultaneous probing of charge transfer and transport at the nanocrystal (NC)/metal oxide interface. Using the transmission line method (TLM) in a ZnO/PbSe/ZnO test structure, we measured the ZnO/PbSe contact resistance from which interfacial charge transfer and transport properties can be correlated in relation to interfacial energetics depending on the size of PbSe NC. The interfacial transfer-transport test probe was validated by comparing size dependent energy level offset derived from the contact resistance value with the established trend. Importantly, by altering the chemical nature of the molecules attached to the NC surface, we discovered that charge transport properties including mobility in the PbSe channel away from the interface are extended into the interfacial region, enabling correlation between carrier diffusion and the electrical mobility at the electron donor/acceptor interface. With a very low mobility in the interface region, charge transfer associated with carrier diffusion is suggested to reflect the nature of energetic disordered interfacial region rather than the electrical mobility.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We developed a test platform to enable simultaneous probing of charge transfer and transport. </LI> <LI> From the ZnO/PbSe contact resistance interface charge transfer and transport were quantified. </LI> <LI> Highly efficient charge transfer at the donor/acceptor interface can be achieved through optimized NC-ligand interaction. </LI> </UL> </P>