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Exposure to occupational hazards for pregnancy and sick leave in pregnant workers
Jean-Bernard Henrotin,Monique Vaissiere,Maryline Etaix,Mathieu Dziurla,Stephane Malard,Dominique Lafon 대한직업환경의학회 2017 대한직업환경의학회지 Vol.29 No.-
Background: This study aimed to investigate the association between exposure to occupational hazards for pregnancy and sick leave (SL) in pregnant workers. Methods: A cross-sectional study was performed in French occupational health services in 2014. Occupational hazards for pregnancy were assessed by occupational health physicians (OHPs). After delivery and at the time of returning to work, 1,495 eligible workers were interviewed by OHPs. Information on SL was self-reported. Risk ratios (RRs) were calculated from multivariable analyses based on a generalized linear model with a Bernoulli distribution and a log link adjusted for selected confounders for binary outcomes or zero-inflated negative binomial regression for count outcomes. Results: Among recruited workers, 74.9% presented “at least one SL” during pregnancy. After adjustment, the cumulative index of occupational hazards (0, 1–2, 3–4, ≥ 5 risks) for pregnancy was significantly associated with “at least one SL” during pregnancy in a dose–response relationship. This gradient was also observed with “early SL” (<15 week gestation): from 1 to 2 risks, RR = 1.48 (95% confidence intervals (CIs): 0.92-2.38); from 3 to 4 risks, RR = 2.03 (95% CI: 1.25-3.30); equal to or higher than five risks, RR = 2.90 (95% CI: 1.89-4.44); with “duration of absence” (adjusted mean): from 1 to 2 risks, m= 38.6 days; from 3 to 4 risks, m= 46.8 days; equal to or higher than five risks, m= 53.8 days. We also found that deprivation, pregnancy at risk, assisted reproductive therapy, work-family conflicts, home-work commuting felt as difficult and young age are associated with a higher risk of SL. Conclusions: Our results support the assertion that pregnant workers exposed to occupational hazards for pregnancy without medical complications are also at risk of taking SL during pregnancy. More prevention in the workplace for pregnant workers exposed to occupational hazards could reduce SL.
Xu, Yue,Cristoloveanu, Sorin,Bawedin, Maryline,Im, Ki-Sik,Lee, Jung-Hee Institute of Electrical and Electronics Engineers 2018 IEEE transactions on electron devices Vol. No.
<P>This paper presents a new concept, supported by 3-D TCAD simulations, for improving the performance and subthreshold swing (SS) of enhancement-mode AlGaN/GaN fin-shaped field-effect transistors (FinFETs). By choosing appropriate device parameters, the formation of 2-D electron gas (2DEG) can be delayed such as to ensure simultaneous activation of 2DEG and sidewall MOS channels at positive threshold voltage for normally off operation. The 2DEG channel starts forming in the middle of the fin, whereas the edges are depleted by the lateral MOS gates. Not only increasing the gate voltage does the 2DEG charge increase, but also the effective width is enlarged being less depleted by the gates. This double-2DEG mechanism adds to the regular MOS channels on the sidewalls and enables enhanced performance. The 3-D TCAD simulations indicate that narrow FinFET (20 nm) can exhibit excellent switching characteristics: very low SS of 55 mV/decade, below the 60 mV/decade limit, high on/off current ratio of 10<SUP>10</SUP>, and good current driving capability due to the added 2DEG channel contribution. The maximum transconductance is 350 mS/mm, the drain current reaches 380 mA/mm, and the on resistance is as low as 0.018 <TEX>$\text{m}\Omega \cdot \text {cm}^{2}$</TEX>.</P>
High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure
Ki-Sik Im,Chul-Ho Won,Young-Woo Jo,Jae-Hoon Lee,Bawedin, Maryline,Cristoloveanu, Sorin,Jung-Hee Lee IEEE 2013 IEEE transactions on electron devices Vol.60 No.10
<P>Two types of fin-shaped field-effect transistors (FinFETs), one with AlGaN/GaN heterojunction and the other with heavily doped heterojunction-free GaN layer operating in junctionless mode, have been fabricated and characterized. The threshold voltages of both devices shift toward positive direction from large negative value as the fin width decreases. Both devices exhibit high ON-state performance. The heterojunction-free GaN FinFETs show superior OFF-state performance because the current flows through the volume of the GaN channel layer, which can be fully depleted. The proposed GaN nanochannel FinFETs are very promising candidates not only for high performance, but also for high power applications.</P>
Extended Analysis of the <tex> $Z^{2}$</tex> -FET: Operation as Capacitorless eDRAM
Navarro, Carlos,Lacord, Joris,Parihar, Mukta Singh,Adamu-Lema, Fikru,Duan, Meng,Rodriguez, Noel,Cheng, Binjie,El Dirani, Hassan,Barbe, Jean-Charles,Fonteneau, Pascal,Bawedin, Maryline,Millar, Campbell Institute of Electrical and Electronics Engineers 2017 IEEE transactions on electron devices Vol.64 No.11
<P>The Z(2)-FET operation as capacitorless DRAM is analyzed using advanced 2-D TCAD simulations for IoT applications. The simulated architecture is built based on actual 28-nm fully depleted silicon-on-insulator devices. It is found that the triggering mechanism is dominated by the front-gate bias and the carrier's diffusion length. As in other FB-DRAMs, the memory window is defined by the ON voltage shift with the stored body charge. However, the Z(2)-FET's memory state is not exclusively defined by the inner charge but also by the reading conditions.</P>