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박경완(KyoungWan Park),이성재(Seongjae Lee),신민철(Mincheol Shin),이일항(El-Hang Lee),김주진(Ju-Jin Kim),이후종(Hu Jong Lee) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.4
전자의 파동성에 기인하는 여러가지 양자간섭 현상을 연구하기 위하여, 금속의 미세고리구조를 제작하였다. 전자의 양자간섭과 가간섭 역충돌 효과에 의한 자기저항의 진동현상이 관측되었으며, 자기저항의 비주기 섭동 현상과 비국재현상도 관찰되어 중시적 전기 전도도의 일반식에 의하여 설명되었다. 또한 AlGaAs/GaAs의 이차원 전자가스층을 이용한 고리구조도 제작되어, 양자 효과와 탄동적 수송의 영역에서 자기저항이 측정되었다. We have fabricated metal-based Aharonov-Bohm ring structures by using electron beam lithography and lift-off techniques and examined various quantum interference phenomena resulting from wave natures of electrons. Oscillations of magnetoresistance were observed at low temperatures, which we attribute to quantum interference and coherent back scattering effect of normal electrons. The intensity of aperiodic fluctuation was measured and explained by the general formula of the conductance fluctuation. Non-local behavior of the electron transport involving the reciprocity relation in the magnetoresistance was seen in the ring structures. Also, mesoscopic rings from the modulation-doped AlGaAs/GaAs heterostructures have been fabricated by using electron beam lithography and chemical wet etching techniques. The magnetoresistance has been measured at 10 mK in order to examine the transport characteristics in the regime where the quantum effects and the ballistic transport dominate.
군견에서 분리한 Enterococcus faecalis, E. faecium의 항생제 내성 연구
박경완 ( Kyoungwan Park ),주영훈 ( Younghoon Joo ),조성범 ( Sungbum Cho ),방기만 ( Kiman Bang ),고명식 ( Myeongsik Ko ),유건주 ( Gunju Yoo ) 국군의무사령부 2017 대한군진의학학술지 Vol.48 No.1
Objective: Investigate antimicrobial resistance of enterococci isolated from various group of military working dogs(MWDs) to understand their characteristics and the differences between isolates from different groups. Methods: Fecal samples of military working dogs were collected from military working dog training center located in Chuncheon, Korea. Samples were collected by using sterile material and transported to laboratory within 12hrs. Species was confirmed by polymerase chain reaction. Antimicrobial susceptibility test was performed on E. faecalis, E. faecium, and other unidentified Enterococcus spp. isolates using disk diffusion method against 12 antibiotics. Results: First, in cohort study, we collected 193 feces samples from three group of puppy dogs and 200 Enterococcus spp. (149; 74.50% E. faecalis, 45; 22.50% E. faecium, 6; 3.00% other Enterococcus spp.) were isolated from this samples. All 200 isolates were susceptible to ampicillin, amoxicillin-clavulanic acid, chloramphenicol, imipenem. Antimicrobial resistance against aminoglycosides and ciprofloxacin of the isolates was increased with growth of the puppy dogs. In cross sectional study, total 137 samples including 127 feces and 10 soil samples were collected. 44 E. faecalis, 50 E. faecium, and 19 species unidentified Enterococcus were isolated from those samples. In case of refresher training dogs, the isolation rate of E. faecalis was high shortly after entering training center, but the isolation rate of E. faecium tended to increase immediately before leaving. Most antimicrobial resistance rates were higher in enterococci isolated from MWDs served MWDs training center than in enterococci isolated from refresher training MWDs served other field troops. Conclusion: Continuous monitoring of antimicrobial resistance is needed to consider the possibility of exposure to antibiotic-resistant bacteria in soldiers who live with dogs and select appropriate antibiotics for MWDs.
Woo, Kyoungwan,Lee, Se Hyeong,Lee, Sanghyun,Bak, So-Young,Kim, Yoo-Jong,Yi, Moonsuk Elsevier 2019 Microelectronic engineering Vol.215 No.-
<P><B>Abstract</B></P> <P>InAlZnO (IAZO) thin-film transistors (TFTs) containing an InZnO (IZO) conducting layer at the interface between the IAZO channel layer and the gate insulator layer were fabricated. The electrical characteristics and bias stress stability of the IAZO/IZO TFTs were examined as functions of the thickness of the interfacial IZO conducting layer (which was set as 1, 2, and 3 nm), and optimal performance of the TFTs was achieved when the thickness was 2 nm. The optimized IAZO/IZO TFT showed a saturation mobility of 52.6 cm<SUP>2</SUP>/V·s, which is superior to that of a pristine IAZO TFT (29.8 cm<SUP>2</SUP>/V·s). Furthermore, the threshold voltage shifts under positive and negative bias stress conditions simultaneously improved from +2.1 V to +1.0 V and from −1.1 V to −1.0 V, respectively. IAZO/IZO interfaces were analyzed by X-ray photoelectron spectroscopy to elucidate the cause of the improved device characteristics.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We fabricated InAlZnO TFTs containing interfacial InZnO conducting layer. </LI> <LI> Carrier density of the channel layer drastically increases near the interface. </LI> <LI> Optimized InAlZnO/InZnO TFT exhibits saturation mobility over 50 cm<SUP>2</SUP>/V·s. </LI> <LI> The InZnO layer improved the stability of the InAlZnO TFT under both bias stresses. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Yonghyun Lim,Kyoungwan Park 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.6
Er-doped SiOx (x < 2) films were deposited in an O2-filled atmosphere using a silicon target with an Er patch in a pulsed laser deposition system. The photoluminescence intensities observed at 1.54 μm depended on the oxygen pressure during the deposition and on the post-annealing time. Er-doped SiOx light-emitting diodes were fabricated, and broad electroluminescence spectra (from 1.2 to 1.6 μm) in the infrared range were obtained above the on-current density of 2 A/cm2 under several forward-bias voltages. The electroluminescence is attributed to the defect-state transitions in the SiOx (x < 2) films and to the Er3+ intra-4f transition. An experiment was conducted to compare the visible luminescence of undoped films with that of Er-doped films. This experiment involved the separation of the Si and the SiO2 phases with silicon nanoclusters formed and embedded in the film. The electroluminescence results point to the possibility of using a silicon-based light source for optical communication devices.