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증착 후 열처리 조건에 따른 ITO박막의 광학적, 전기적 특성 연구
이기암 단국대학교 1998 論文集 Vol.33 No.-
Electronbeamevaporated Indium Tin Oxide(ITO) films were analyzed by investigation of transmittance. sheet resistance and crystalline structure with varying annealing temperature and oxygen partial pressure in air and vacuum. With increasing annealing temperature, ITO films showed two changes ; the transmittance increased and the sheet resistance became lower. In vacuum annealing, transmittance increased with increasing oxygen partial pressure. The best conditions for nonabsorbing ITO thin films are annealing temperature of 280℃ and oxygen partial pressure of 5×10^-5 torr. The crystalline structure of ITO films were more excellent at the vacuum annealing than the annealing in air, with the increase of annealing temperature and the decrease of oxygen partial pressure.
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NQR Oscillator의 제작과 Para-Chloroaniline (p-CIC_6H_4NH_2)의 N^14공명진동수 측정
李起岩 단국대학교 1983 論文集 Vol.17 No.-
Since NQR frequencies range from below 1MHz to more than 1000MHz, the choice of oscillator-detector is determined largely by the nuclear species to be investigated. Nitrogen-14 N.Q.R. resonances have been observed between 800 MHz and 6MHz Therefore, the oscillator is useful for work with N^14 has been constructed. A Robinson type r.f oscillator has been constructed for N.Q.R spectroscopy by employing field effect transistor. Using this spectrometer, the resonance frequencies of N^14 in p-CIC_6H_4NH_2 have been measured at liquid nitrogen temperature. The quadrupole coupling constant ? and asymmetry parameter η are obtained from the resonance frequencies.
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이기암,박국상 단국대학교 1999 論文集 Vol.34 No.-
High quality 3C-SiC epilayer was grown on Si(lll) at 1250 ℃ using chemical vapor deposition(CVD) technique by pyrolyzing tetramethylsilane(TMS). The crystallinity and electrical properties of 3C-SiC epilayer were investigated by X-ray diffraction. Fourier-transform infrared spectroscopy. Raman spectrum. Hall measurement and current-voltage characteristics(Ⅰ-Ⅴ).
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李起岩,玄峻源 단국대학교 1993 論文集 Vol.27 No.-
We have measured the Hall voltage using three samples Ag, Cu, Al and examined into the relations between Hall voltage. The precision of measurement was determined by the results and the geometric effect and the temperature influences of the samples. Because the Hall voltage is extreamly low, we must pay attention to the influence of surrounding temperature were proved by comparing with Hall voltage measured.
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李起岩 단국대학교 1986 論文集 Vol.20 No.-
A Robinson type r.f oscillator has been constructed for N.Q.R spectroscopy by employing field effect transistor. Using this spectrometer, the resonance frequencies of ^l4N in Picolinic Acid have been mcasurcd at liquid nitrogen temperature. The quadrupole coupling constant (e^2qQ)/h and the asymmetry parameter η are obtained from the resonance frequencies. The NQR coupling constant and asymmetry parameter have been used to deduce the electron occupation numbers in the nitrogen σ-and π- bonding orbitals.
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李起岩 단국대학교 1985 論文集 Vol.19 No.-
^14N-Nuclear Quadrupole Resonance studies has been made for the polycrystalline of hydrazaine nirtrate*N_2H_5NO_3) at 293K. Resonance frequencies, ν^+ = 4.5566MHz, ν_- = 2.6182Mhzat 293K are obwerved. The quadrupole coupling constant E^2qQ/hand the asymmetry parameter η are 4.7832MHz and 0.8105 respectively at the room temperature(293K).
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김종기,정진봉,백주열,이기암 단국대학교 신소재기술연구소 1993 신소재 Vol.3 No.-
DC Magnetron Sputtering 법으로 제조된 Ni_1-xFe_x 박막에 대해 박막의 두께 및 시편의 조성비가 자기저항비에 미치는 영향에 대하여 조사하였다. 시편의 조성비는 Fe chip의 개수로 조정하였으며, 박막의 두께는 400∼1600Å으로 변화시켰다. 복합타겟의 구성방법은 개량된 모자이크방식이었고, 자기저항비는 4-point probe를 이용하여 측정하였다. Fe의 조성이 증가함에 따라서 자기저항비는 증가하였으며, 조성이 x≒11에서 최대가 되었고, 두께가 증가함에 따라 자기저항비도 증가하였다. 제작된 모든 시편은 비정질구조를 나타내었다. We have investigated the magnetoresistance ratio on the influence of film thickness and range of sample composition about Ni_1-xFe_x Thin Film produced by DC Magnetron Sputtering. The range of sample composition was controlled by the number of Fe chips, and the range of deposited film was 400Å to 1600Å. Target formation was the improved mosaic type, and magnetoresistance ratio measured by 4-point probe method. The magnetoresistance ratio was increased with the increase of film thickness, and the magnetoresistance ratio was varied with sample composition. All samples were showed amorphous structure.
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스퍼터링 조건에 따른 Co 박막의 증착속도 및 미세구조의 변화
백주열,박창만,최영근,이기암,황도근 단국대학교 신소재기술연구소 1992 신소재 Vol.2 No.-
DC 마그네트론 스퍼터링법으로 제조된 코발트 박막에 대해 증착속도 및 미세구조에 미치는 스퍼터링조건의 영향을 조사하였다. 증착속도는 투입전력이 커질수록 증가하였으며, 아르곤 압력이 커질수록 감소하였는데, 이는 투입전력의 증가로 인한 타게트 표면의 이온전류 밀도의 상승과 Ar 압력증가에 따른 비산효과의 증대로 인한 타게트 표면의 이온 전류 밀도의 감소로 고찰되었다. 투입전력이 커질수록 결정립의 크기가 감소하였으며, 투입 전력에 관계없이 특정한 면이 발달하지 않는 비정실 구조를 나타내었다. Ar 압력에 관계없이 비정질 구조를 나타내었다. We have investigated the influence of sputtering condition on deposition rate and microstructure of Co thin film produced by the method of DC Magnetron Sputtering. Deposition rate increased with the input power due to the rise in ionic current density on the surface of target, and decreased with the pressure of Ar gas due to the decrement of ionic current density by the effect of diffusion. Microstructure of the Co thin film became a finer structure with the increase in the input power, and showed amorphous irrespective of the charge of the input power and the pressure of Ar gas.
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Sputtering 성막속도가 박막의 특성에 미치는 영향
이기암(Ky Am Lee) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
본 연구에서는 DC magnetron sputtering 장비를 이용하여, GdFe, Co, CoCr 박막을 제작함에 있어서 sputtering 조건에 관계되는 Ar 압력, 투입전력, 기판의 종류 등의 요소가 박막의 특성, 특히 보자력과 미세구조에 미치는 영향을 관찰하였다. GdFe의 경우 성막속도가 증가함에 따라 Gd의 atomic%가 줄어드는 것을 알 수 있었으며, Ar 압력이 증가함에 따라 성막속도는 감소하였고, 투입전력이 증가함에 따라 성막속도는 거의 선형적으로 증가함을 알 수 있었다. 또한 투입전력이 증가함에 따라 박막의 보자력도 증가함을 알 수 있었다. Co 박막에 대해서는 투입전력과 Ar 압력에 관한 성막속도와 미세구조에 관하여 관찰하였다. 이로써 투입전력이 증가하면 성막속도가 증가하며 결정립의 크기가 감소함을 알 수 있었고, Ar 압력이 증가하면 성막속도가 감소함을 알 수 있었다. CoCr의 박막에서는 substrate 종류에 따라 보자력 및 미세구조에 미치는 영향에 대해 연구를 행하였으며, substrate의 종류가 미세구조와 보자력에 상당한 영향을 준다는 것을 알 수 있었다. In this study, we have investigated the influence of sputtering conditions (Ar pressure, input powers, substrates) on coercivity and microstructures of GdFe, Co, CoCr thin films produced by the method of DC magnetron sputtering. In GdFe films, we have observed that the Gd atomic ratio was decreased with the deposition rate, and the deposition rate decreased with the pressure of Ar gas and the increased linearly with input power. It was also observed that the coercivity of thin films was increased with input power. In Co films, we have investigated the deposition was increased and the Co thin film became finer structure with the increase in the input power, was increased and the Co thin film became finear structure with the increase in the input power, and the deposition rate was decreased with the pressure of Ar gas. In CoCr films, we have investigated the effects of substrates on the coercivity (H_c) and the microstructure. We have found that the substrates plays a crucial role in the microstructure and the coercivity (H_c).
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