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      • SCOPUSKCI등재

        Kinetic Study on the Low-lying Excited States of Ga Atoms in Ar

        Kuntack Lee,Ju Seon Goo,Ja Kang Ku Korean Chemical Society 1994 Bulletin of the Korean Chemical Society Vol.15 No.8

        Decay kinetics of Ga(5s), Ga(5p) and Ga(4d) atoms in Ar were studied by laser induced fluorescence technique. Theground state gallium atoms in the gas phase were generated by pulsed dc discharge of trimethyl gallium and argon mixtures. Both pulsed discharge and YAG-DYE laser system were controlled by a dual channel pulse generator and the delay time between the end of discharge and laser pulses was set 3.0-6.0 ms. The Ga(5s) and Ga(4d) atoms were generated by single photon excitation from the ground state Ga atoms and radiative lifetimes as well as the total quenching rate constants in Ar were obtained from the pressure dependence of the fluorescence decay rates. The Ga(5p) atoms were populated by a two-photon excitation method and the cascade fluorescence from Ga(5s) atoms were analyzed to extract quenching rate constant of Ga(5p) atoms by Ar in addition to radiative lifetimes of Ga(5p) state. The magnitudes of the quenching rate constants by Ar for the low-lying excited states of Ga atoms are 1.6-3$ {\times}10^{-11}cm^3$ molecul$e^{-1}s^{-1}$, which are much larger than those for alkali, alkaline earth and Group 12 metals. Based on the measured rate constants, kinetic simulations were done to assign state-to-state rate constants.

      • KCI등재후보

        Effect of Pad Surface Roughness on Material Removal Rate in Chemical Mechanical Polishing Using Ultrafine Colloidal Ceria Slurry

        Sol Han,Hong Jin Kim,Myung Ki Hong,Byoung Ho Kwon,Kuntack Lee,Youngsun Ko 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.2

        In this paper, effect of ultrafine ceria (UFC) particle of which size is as small as 20 nm on CMP performance was investigated. Compared to conventionally used 100 nm abrasive particle which is made by calcination process, almost 80% scratch reduction was obtained by using UFC. However, a UFC slurry showed unstable material removal rate behavior from less than 200 Å/min to over 2000 Å/min, depending on polishing pad surface characteristics. As pad surface roughness increases, oxide removal rate using UFC drops abruptly to less than 200 Å/min. In order to use UFC for scratch reduction, the pad surface roughness optimization is necessary to avoid a sudden drop in the removal rate. This study gives a possible boundary for pad surface roughness for UFC application for CMP.

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