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Enhancement of Impurity, Machinability and Mechanical Properties in Te-Treated 0Cr18Ni9 Steel
Jian‑bo Xie,Tian Fan,Han Sun,Zhi‑qi Zeng,Jian‑xun Fu 대한금속·재료학회 2021 METALS AND MATERIALS International Vol.27 No.6
To enhance the machinability and mechanical properties of 0Cr18Ni9 steel, free-machining element Te was introduced inthis work. By adding various quantities of Te to steel, several machining and tensile tests were carried out. Results show thatwith Te addition of 530 ppm, the number of inclusion sizes below 1 μm disappeared. With raising Te from 360 to 530 ppm,more MnTe–MnS inclusions of 10–40 μm were in spherical shape; above 50 μm2, the ratio of inclusion area at 530 ppmwas greatest among all, and the large-sized inclusions occupied a larger share. Te addition contributed to the surfaces ofmachining steels more smooth. The ultimate tensile strength of steel increased from 399 to 435 MPa. Te resulted in growthof sulfides and improved the machinability of steel.
Jian‑bo Xie,Bei‑bei Liu,Xiang‑yu Wu,Jian‑xun Fu 대한금속·재료학회 2022 METALS AND MATERIALS International Vol.28 No.5
This work aims to comprehensively summarize the types and distribution of the isolated Bi particles and MnS inclusions inthe Bi-bearing steels, to study the precipitated behavior of sulfide, and to study the effect of Bi particles on grain sizes andthe volume thermal expansion coefficients of the steels. Results show that the average percentage of the isolated Bi particles,semi-encapsulation, complete encapsulation, back-bridge, tiny encapsulation, cavity bridge Bi–MnS inclusions in the Bibearingsteels was 16.89%, 20.49%, 3.44%, 16.89%, 31.63%, 10.66%, respectively. The average equivalent diameters of thegrains in the 0 ppm, 130 ppm, 240 ppm, 760 ppm, 1200 ppm and 2300 ppm Bi content steels were 20.88, 20.17, 19.54, 18.13,13.98 and 13.25 μm, respectively. The precipitated equilibrium mass concentration product of the MnS (w[Mn]·w[S]) wascalculated to be 1.07, and the solid fraction fS value was 0.61. At 950 °C, the volume thermal expansion coefficient change(ΔVE) in 760 ppm Bi content steel was minimum 4 × 10–10%, while at 461.6 °C the ΔVE was maximum, 0.09%, which meansthat Bi affected the volume thermal expansion of the steel strongest in this temperature range.
Jian-Xun Wang,권상직,조의식 한국전기전자재료학회 2013 Transactions on Electrical and Electronic Material Vol.14 No.2
At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched Nd:YVO4 laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast,zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.
Jian-Xun Chen,Heng-Quan Ran,Chang-Qin Sun 대한외과학회 2016 Annals of Surgical Treatment and Research(ASRT) Vol.90 No.5
Associating liver partition and portal vein ligation for staged hepatectomy (ALPPS) could induce extensive and rapid future liver remnant hypertrophy. However, the morbidity for ALPPS is very high. This paper reports a modified ALPPS (associating microwave ablation and portal vein ligation for staged hepatectomy, AMAPS), which was successfully applied in the treatment of huge hepatocellular carcinoma with cirrhosis, and the procedure of operation was greatly simplified. Hence, AMAPS is feasible and safe in selected patients with primary hepatocellular carcinoma and cirrhosis.
Jian-Xun Hou,Sehyun Shin 한국유변학회 2008 Korea-Australia rheology journal Vol.20 No.4
A method based on transient shear flow dynamics of red cell aggregates was developed to investigate reversible re-aggregation processes with decreasing shear flow. In the microchannel-flow aggregometry, the aggregated red blood cells that are subjected to continuously decreasing shear stress in microchannel flow were measured with the use of a laser-scattering technique. Both the laser-backscattered intensity and pressure were simultaneously measured with respect to time, resulting in shear stress ranging from 0~35 Pa for a time period of less than 30 seconds. The time dependent recording of the backscattered light intensity (syllectogram) yielded an upward convex curve with a peak point, which reflected the transition threshold of aggregation in the RBC suspensions. Critical-time and critical-shear stress corresponding to the peak point were examined by varying the initial pressure-differential and the microchannel depth, and these results showed good potential for being used as new aggregation indices. In the present study, these newly proposed indices were also validated by differentiating the effect of fibrinogen on RBC aggregation and then these indices were compared to the conventional indices that were measured by a rotational aggregometer
Hou, Jian-Xun,Shin, Se-Hyun The Korean Society of Rheology 2008 Korea-Australia rheology journal Vol.20 No.4
A method based on transient shear flow dynamics of red cell aggregates was developed to investigate reversible re-aggregation processes with decreasing shear flow. In the microchannel-flow aggregometry, the aggregated red blood cells that are subjected to continuously decreasing shear stress in microchannel flow were measured with the use of a laser-scattering technique. Both the laser-backscattered intensity and pressure were simultaneously measured with respect to time, resulting in shear stress ranging from $0{\sim}35\;Pa$ for a time period of less than 30 seconds. The time dependent recording of the backscattered light intensity (syllectogram) yielded an upward convex curve with a peak point, which reflected the transition threshold of aggregation in the RBC suspensions. Critical-time and critical-shear stress corresponding to the peak point were examined by varying the initial pressure-differential and the micro channel depth, and these results showed good potential for being used as new aggregation indices. In the present study, these newly proposed indices were also validated by differentiating the effect of fibrinogen on RBC aggregation and then these indices were compared to the conventional indices that were measured by a rotational aggregometer.
Wang, Jian-Xun,Kwon, Sang Jik,Han, Jae-Hee,Cho, Eou Sik American Scientific Publishers 2013 Journal of nanoscience and nanotechnology Vol.13 No.9
<P>A Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser was applied to obtain the indium tin oxide (ITO) patterns on flexible polyethylene terephthalate (PET) substrate by a direct etching method. After the ITO films were deposited on a soda-lime glass and PET substrate, laser ablations were carried out on the ITO films for various conditions and the laser ablated results on the ITO films were investigated and analyzed considering the effects of substrates on the laser etching. The laser ablated widths on ITO deposited on glass were found to be much narrower than those on ITO deposited on PET substrate, especially, at a higher scanning speed of laser beam such as 1000 mm/s and 2000 mm/s. As the thermal conductivity of glass substrate is about 7.5 times higher than that of PET, more thermal energy would be spread and transferred to lateral direction in the ITO film in case of PET substrate.</P>
Wang, Jian-Xun,Hyung, Gun Woo,Li, Zhao-Hui,Son, Sung-Yong,Kwon, Sang Jik,Kim, Young Kwan,Cho, Eou Sik American Scientific Publishers 2012 Journal of nanoscience and nanotechnology Vol.12 No.7
<P>In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (I(ON/OFF)), off-state current, and saturation field-effect mobility (muFE). The a-IGZO TFTs with the cross-linked polyvinyl alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the muFE (17.4 cm2/Vs), SS (0.9 V/decade), and I(ON/OFF) (8.9 x 10(6)).</P>
Laser direct patterning of indium tin oxide for defining a channel of thin film transistor.
Wang, Jian-Xun,Kwon, Sang Jik,Han, Jae-Hee,Cho, Eou Sik American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.11
<P>In this work, using a Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser, a direct patterning of indium tin oxide (ITO) channel was realized on glass substrates and the results were compared and analyzed in terms of the effect of repetition rate, scanning speed on etching characteristics. The results showed that the laser conditions of 40 kHz repetition rate with a scanning speed of 500 mm/s were appropriate for the channeling of ITO electrodes. The length of laser-patterned channel was maintained at about 55 microm. However, residual spikes (about 50 nm in height) of ITO were found to be formed at the edges of the laser ablated area and a few ITO residues remained on the glass substrate after laser scanning. By dipping the laser-ablated ITO film in ITO diluted etchant (ITO etchant/DI water: 1/10) at 50 degrees C for 3 min, the spikes and residual ITO were effectively removed. At last, using the laser direct patterning, a bottom-source-drain indium gallium zinc oxide thin film transistor (IGZO-TFT) was fabricated. It is successfully demonstrated that the laser direct patterning can be utilized instead of photolithography to simplify the fabrication process of TFT channel, resulting in the increase of productivity and reduction of cost.</P>
Wang, Jian-Xun,Kwon, Sang Jik,Cho, Eou Sik The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.2
At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.