Cu 기판위에 성장한 MgO, MgAl₂O₄와 MgAl₂O₄/MgO 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정

정강원(K. W. Jung),이혜정(H. J. Lee),정원희(W. H. Jung),오현주(H. J. Oh),박철우(C. W. Park),최은하(E. H. Choi),서윤호(Y. H. Seo),강승언(S. O. Kang) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.4

MgAl₂O₄ 막은 MgO 보호막 보다 단단하며 수분 흡착 오염문제에 상당히 강한 특성을 가진다. 본 연구에서 AC-PDP의 유전체보호막으로 사용되는 MgO 보호막의 특성을 개선하기 위해 MgAl₂O₄/MgO 이중층 보호막을 제작하여 특성을 조사하였다. 전자빔 증착기를 사용하여 Cu 기판에 MgO와 MgAl₂O₄을 각각 1000 Å 두께로 증착, MgAl₂O₄/MgO을 200/800 Å 두께로 적층 증착 후, 이온빔에 의한 충전현상을 제거하기 위해 Al을 1000 Å 두께로 증착하였다. 집속 이온빔(focused ion beam ; FIB)장치를 이용하여 10 ㎸에서 14 ㎸까지 이온빔 에너지에 따라 MgO는 0.364 ~ 0.449 값의 스퍼터링 수율에서 MgAl₂O₄/MgO을 적층함으로 24 ~ 30 % 낮아진 0.244 ~ 0.357 값의 스퍼터링 수율이 측정되었으며, MgAl₂O₄는 가장 낮은 0.088 ~ 0.109 값의 스퍼터링 수율이 측정되었다. g-집속이온빔(g-FIB)장치를 이용하여 Ne? 이온 에너지를 50 V에서 200 V까지 변화 시켜 MgAl₂O₄/MgO와 MgO는 0.09 ~ 0.12의 비슷한 이차전자방출 계수를 측정 하였다. AC-PDP셀의 72시간 열화실험 후 SEM 및 AFM으로 열화된 보호막의 표면을 관찰하여 기존의 단일 MgO 보호막과 MgAl₂O₄/MgO의 적층보호막의 열화특성을 살펴보았다. It is known that MgAl₂O₄ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of MgAl₂O₄ and MgAl₂O₄/MgO layers as dielectric protection layers for AC-PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and MgAl₂O₄ films both with a thickness of 1000 Å and MgAl₂O₄/MgO film with a thickness of 200/800 Å were grown on the Cu substrates using the electron beam evaporation. 1000 Å thick aluminium layers were deposited on the protective layes in order to avoid the charging effect of Ga? ion beam while the focused ion beam(FIB)is being used. We obtained sputtering yieds for the MgO, MgAl₂O₄ and MgAl₂O₄/MgO films using the FIB system. MgAl₂O₄/MgO protective layers have been found th show 24 ~ 30% lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated Ga? ion beam with energies ranged from 10 ㎸ to 14 ㎸. And MgAl₂O₄ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the γ-FIB. MgAl₂O₄/MgO and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated Ne+ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and MgAl₂O₄/MgO protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that MgAl₂O₄/MgO protective layer has superior hardness and degradation resistance properties to MgO protective layer.

A study of nerve agent model organophosphonate binding with manganese-A₂B-corrole and -A₂B₂-porphyrin systems

Kim, K.,Kim, I.,Maiti, N.,Kwon, S.J.,Bucella, D.,Egorova, O.A.,Lee, Y.S.,Kwak, J.,Churchill, D.G. Pergamon Press 2009 Polyhedron Vol.28 No.12

Herein the synthesis and binding studies of novel trans-A<SUB>2</SUB>B-corrole and trans-A<SUB>2</SUB>B<SUB>2</SUB>-porphyrin derivatives are presented in comparing manganese(III)-organophosphonate (OP) binding (e.g., M<SUP>n+</SUP>←O?PR(OR)<SUB>2</SUB>) capabilities. H<SUB>3</SUB>(PFP-VC) [PFP-VC=5,15-di(pentafluorophenyl)-10-(3-vinylphenyl)corrolate] was synthesized by way of literature procedures and was characterized by a variety of 2-D NMR spectroscopic techniques and single-crystal X-ray diffraction. These compounds represent the first example of 3-vinyl-phenyl-containing meso-substituted corroles or porphyrins. Mn(PFP-VC) (3) was treated separately with (CH<SUB>3</SUB>CH<SUB>2</SUB>O)<SUB>2</SUB>P?O(C<SUB>3</SUB>H<SUB>6</SUB>NMe<SUB>2</SUB>), (C<SUB>4</SUB>H<SUB>9</SUB>O)<SUB>2</SUB>P?O(Me), (C<SUB>2</SUB>H<SUB>5</SUB>O)<SUB>2</SUB>P?O(CH<SUB>2</SUB>COCH<SUB>3</SUB>), (CH<SUB>3</SUB>CH<SUB>2</SUB>O)<SUB>2</SUB>P?O(Me), to give 1:1 adducts, as determined by UV-Vis spectroscopy (Job Plot), giving a red shift; Ph<SUB>3</SUB>P?O, was also found to bind, but very weakly. The trans-A<SUB>2</SUB>B<SUB>2</SUB>-porphyrin analogue Mn(PFP-VP) (4) was also prepared by way of a literature procedure; related binding studies gave 1:1 organophosphonate-Mn(PFP-VP) adducts (Job Plot). A clean blue shift occurred for the Mn-porphyrins at higher organophosphonate loadings (K<SUB>a</SUB> values: 6.7 (0.9)-11.9 (0.4)M<SUP>-1</SUP>). DFT geometry optimizations of O?P(OMe)<SUB>2</SUB>Me binding and formal Mn-O or P-O cleavage products in the unsubstituted neutral Mn-corrolato and -porphyrinato systems with a range of metal-based spin states revealed greatest stability in formal phosphoryl oxygen binding (energies: 11-13kcal/mol) for the Mn-corrole (singlet); the Mn-porphyrin (sextet) was also quite stable.

Influence of Annealing Temperature on Magnetoelectric Properties of CoFe2O4/Pt/Pb(Zr0.3Ti0.7)O3 Thin Films

Eum, Y.J.,Hwang, S.-O.,Ryu, J.,Kim, J.-W.,Koo, C.Y.,Lee, J.-Y.,Lee, H.Y. Taylor Francis 2014 Ferroelectrics Vol.465 No.-

<P>CoFe2O4/Pt/Pb(Zr0.3Ti0.7)O-3 thin films were grown on Pt/Ti/SiO2/Si substrate in order to investigate the magnetoelectric properties of ferromagnetic/ferroelectric multilayer thin films. Thin Pt layer was introduced to prevent inter-diffusion between CoFe2O4 and Pb(Zr0.3Ti0.7)O-3 (PZT) layers. PZT thin film was grown directly on top of Pt substrate by utilizing sol-gel spin coating technique. In order to investigate the possible annealing effect on film microstructure and magnetoelectric properties, multilayer thin film stack was heat-treated at different temperatures ranging from 550 degrees C to 650 degrees C. The structural properties of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Ferroelectric and ferromagnetic behaviors were analyzed by measuring polarization and magnetization - electric and magnetic field hysteresis. Magnetoelectric coefficients were calculated by measuring magnetoelectric voltages using magnetoelectric measurement system. Both the magnetoelectric properties and the coupling effect of CoFe2O4/Pt/PZT films on ferromagnetic and magnetoelectric properties are discussed as a function of heat-treatment temperature.</P>

Magnetoelectric Coupling of CuFe2O4/Pt/Pb(Zr0.52Ti0.48)O3 Multilayer Thin Films

Hwang, S.-O.,Eum, Y.J.,Kim, J.-W.,Ryu, J.,Koo, C.Y.,Lee, J.-Y.,Lee, H.Y. Taylor Francis 2014 Ferroelectrics Vol.465 No.-

<P>CuFe2O4/Pt/Pb(Zr0.52Ti0.48)O-3 (PZT) multilayer thin films were grown on (111)-oriented Pt/TiO2/SiO2/Si < 100 > substrate. PZT layer was fabricated by the sol-gel method. Afterwards, Pt layer was deposited by ion beam sputtering method. Finally, CuFe2O4 layer were deposited using pulsed laser deposition method (PLD). The film structure is tri-layered type, where the bottom PZT layer covered the whole substrate, while Pt and CuFe2O4 layers were deposited through circular shadow masks to measure ferroelectric and magnetoelectric properties. Film microstructure was observed using XRD and FE-SEM. Magnetoelectric coefficients were calculated by measured magnetoelectric voltages using magnetoelectric measurement system.</P>

RF-O₂ Plasma 처리한 MgO 박막의 스퍼터링 수율 측정

정원희(W. H .Jeoung),정강원(K. W. Jeong),임연찬(Y. C. Lim),오현주(H. J. Oh),박철우(C. W. Park),최은하(E. H. Choi),서윤호(Y. H. Seo),김윤기(Y. K. Kim),강승언(S. O. Kang) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.3

RF-O₂ plasma 처리한 MgO 박막의 스퍼터링 수율을 집속이온빔 장치를 이용하여 측정하였다. 가속 전압 10 ㎸의 Ga 이온빔을 주사했을 때 plasma 처리하지 않은 MgO 박막의 스퍼터링 수율은 0.33 atoms/ion, RF-O₂ plasma 처리한 MgO 박막의 스퍼터링 수율은 0.20 atoms/ion 으로 RF-O₂ plasma 처리한 경우 스퍼터링 수율이 낮아졌다. 또한 XPS, AFM을 통해 plasma 처리로 인한 MgO 표면의 변화를 관찰하였다. MgO 박막에 RF-O₂ plasma 처리 한 후 XPS O 1s spectra의 binding energy와 FWHM 값이 각각 2.36 eV와 0.6167 eV 작아졌고 표면거칠기의 RMS 값 또한 0.32 ㎚ 작아졌다. We measured sputtering yield of RF O₂-plasma treated MgO protective layer for AC-PDP(plasma display panel) using a Focused Ion Beam System(FIB). A 10 ㎸ acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 ㎚, respectively.

피스톤의 편심이 O-ring의 변형특성에 미치는 영향

이준혁(J. H. Lee),이준오(J. O. Lee),박태조(T. J. Park) 유공압건설기계학회 2012 유공압건설기계학회 학술대회논문집 Vol.2012 No.6

O-ring seal is widely used in various mechanical devices to prevent mainly leakage of working fluid and incursion of foreign particle. When O-ring is used as a piston seal, the sealing performances are determined by various design parameters such as initial interference, fluid pressure and the clearance gap between piston and cylinder. In this paper, a nonlinear problem solver, MARC, is adopted to analyze the effect of piston eccentricity and fluid pressure on the deformation characteristics of O-ring seal. The results show that the eccentricity of piston can reduce highly the ability of the seal, and then cause easily leakage of fluid.

Chemical Solution Deposition 방법을 이용한 BiFeO₃/Pb(Zr<SUB>0.52</SUB>Ti<SUB>0.48</SUB>)O₃ 다층박막의 전기적 특성에 대한 연구

차정옥(J. O. Cha),안정선(J. S. Ahn),이광배(K. B. Lee) 한국진공학회(ASCT) 2010 Applied Science and Convergence Technology Vol.19 No.1

BiFeO₃(BFO)/Pb(Zr0.52Ti0.48)O₃(PZT) bilayer와 multilayer의 다층구조를 만들어 전기적 특성을 측정하여 같은 두께의 BFO 단층박막과 비교해 보았다. BFO와 PZT 용액을 이용하였으며 chemical solution deposition 방법으로 Pt/Ti/SiO₂/Si(100) 기판위에 각 박막을 증착하였다. X-ray diffraction 분석을 통해 모든 박막이 다배향(multi-orientation) 페로브스카이트(perovskite) 구조를 가졌음을 확인하였다. BFO/PZT Bilayer와 multilayer 박막들은 BFO 단층박막의 비해 누설전류 값이 500 ㎸/㎝에서 약 4, 5차수 정도 감소했으며, 이로 인해 BFO/PZT 다층박막의 강유전체 특성이 크게 향상되었다. BFO/PZT multilayer 다층구조 박막의 경우 안정된 이력곡선(hysteresis loop)을 나타냈으며, 잔류 분극(remanent polarization)의 값은 44.3μC/㎠이었으며, 항전계(2Ec) 값은 681.4 ㎸/㎝였다. BiFeO₃/Pb(Zr0.52Ti0.48)O₃(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/SiO₂/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 ㎸/㎝ was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of 44.3μC/㎠ was obtained at room temperature at 1 ㎑ with the coercive field(2Ec) of 681.4 ㎸/㎝.

UV/TiO2 and UV/TiO2/chemical oxidant processes for the removal of humic acid, Cr and Cu in aqueous TiO2 suspensions

Jung, J. -T.,Choi, J. -Y.,Chung, J.,Lee, Y. -W.,Kim, J. -O. Taylor Francis 2009 Environmental Technology Vol.30 No.3

<P> The objective of this study was to investigate the treatment efficiency of UV/TiO2 and UV/TiO2/chemical oxidant processes for the removal of humic acid and hazardous heavy metals in aqueous TiO2 suspensions. The reaction rate (k) of humic acid and hazardous heavy metals by UV/TiO2 was higher than that of UV illumination alone or TiO2 alone. The removal efficiency for humic acid and Cr(VI) at acid or neutral pH values was higher than that at basic pH values. However, the removal efficiency for Cu(II) at acid pH values was smaller compared with that at neutral or basic pH values. The reaction rate (k) of humic acid and hazardous heavy metals in the TiO2 concentration range of 0.1-0.3 g l-1 increased with increasing TiO2 dosage. However, amounts higher than a TiO2 dosage of 0.3 g l-1 reduced the removal efficiency for humic acid and hazardous heavy metals because of the shielding effect on the UV light penetration in the aqueous solution caused by the presence of excessive amounts of TiO2. The addition of oxidants to the UV/TiO2 system showed an increase in degradation efficiency for the treatment of humic acid and hazardous heavy metals. The optimal concentration of oxidants was: H2O2 50 mg l-1, O3 20 g m-3 and K2S2O8 50 mg l-1, respectively. The degradation efficiency of UV/TiO2/oxidant systems for the removal of humic acid and hazardous heavy metals was much greater when H2O2 was used as the oxidant.</P>

Low temperature crystallization behavior of multi-walled carbon nanotubes/Pb(Zr_0.52Ti_0.48)O₃ nanocomposite thin films through annealing in various atmosphere and duration control

Han, J.K.,Kwak, J.H.,Kim, J.O.,Bu, S.D. Elsevier 2014 CURRENT APPLIED PHYSICS Vol.14 No.9

We report a successful fabrication of 300 nm thick carbon nanotubes and Pb(Zr<SUB>0.52</SUB>Ti<SUB>0.48</SUB>)O<SUB>3</SUB> (CNT-PZT) nanocomposite thin films with annealing temperature as low as 500 <SUP>o</SUP>C in H<SUB>2</SUB>/N<SUB>2</SUB> atmosphere. Realizing the thickness of CNT-PZT nanocomposite thin films down to few hundred nanometers is one way to reduce the operating voltage of its application to micro- or nano-electromechanical system. The field emission scanning electron microscopic and atomic microscopic analysis revealed that the nanocomposite thin films annealed in H<SUB>2</SUB>/N<SUB>2</SUB> atmosphere exhibits the most favorable surface morphology with adequate perovskite (111) reflection of PZT based on X-ray diffraction analysis. The measured dielectric constant and loss tangent of the nanocomposite thin films show that the annealing duration of 30 min promotes the optimum dielectric properties of the nanocomposite thin films. Our observations suggest that the annealing atmosphere and duration are important parameters in controlling the crystallization behavior hence the dielectric properties of the nanocomposite thin films, which can be readily applicable to other nanocomposite thin films.

Excluded vertex-minors for graphs of linear rank-width at most k

Jeong, J.,Kwon, O.j.,Oum, S.i. Academic Press 2014 European journal of combinatorics : Journal europ& Vol.41 No.-

Linear rank-width is a graph width parameter, which is a variation of rank-width by restricting its tree to a caterpillar. As a corollary of known theorems, for each k, there is a finite obstruction set O<SUB>k</SUB> of graphs such that a graph G has linear rank-width at most k if and only if no vertex-minor of G is isomorphic to a graph in O<SUB>k</SUB>. However, no attempts have been made to bound the number of graphs in O<SUB>k</SUB> for k≥2. We show that for each k, there are at least 2<SUP>Ω(3^k)</SUP> pairwise locally non-equivalent graphs in O<SUB>k</SUB>, and therefore the number of graphs in O<SUB>k</SUB> is at least double exponential. To prove this theorem, it is necessary to characterize when two graphs in O<SUB>k</SUB> are locally equivalent. A graph is a block graph if all of its blocks are complete graphs. We prove that if two block graphs without simplicial vertices of degree at least 2 are locally equivalent, then they are isomorphic. This not only is useful for our theorem but also implies a theorem of Bouchet (1988) stating that if two trees are locally equivalent, then they are isomorphic.