An Axisymmetrical Dock in Waves

Isshiki, H.,Hwang, J.H. 대한조선학회 1976 大韓造船學會誌 Vol.13 No.2

Linearized motions of as axisymmetrical dock freely floating in a regular plane wave are discussed. An extension of the Bessho variational principle(Bessho[3]) is derived to obtain a numerical procedure for a solution of the boundary value problem associated with the fluid motion. The added mass and the damping coefficients for a circular dock in vertical(heave) and horizontal(surge) oscillations are evaluated numerically, and the resulte seems to be satisfactory.

HPV Vaccination for Cervical Cancer Prevention is not Cost-Effective in Japan

Isshiki, Takahiro Asian Pacific Journal of Cancer Prevention 2014 Asian Pacific journal of cancer prevention Vol.15 No.15

Background: Our study objectives were to evaluate the medical economics of cervical cancer prevention and thereby contribute to cancer care policy decisions in Japan. Methods: Model creation: we created presence-absence models for prevention by designating human papillomavirus (HPV) vaccination for primary prevention of cervical cancer. Cost classification and cost estimates: we divided the costs of cancer care into seven categories (prevention, mass-screening, curative treatment, palliative care, indirect, non-medical, and psychosocial cost) and estimated costs for each model. Cost-benefit analyses: we performed cost-benefit analyses for Japan as a whole. Results: HPV vaccination was estimated to cost $291.5 million, cervical cancer screening $76.0 million and curative treatment $12.0 million. The loss due to death was $251.0 million and the net benefit was -$128.5 million (negative). Conclusion: Cervical cancer prevention was not found to be cost-effective in Japan. While few cost-benefit analyses have been reported in the field of cancer care, these would be essential for Japanese policy determination.

Expression of Cytoplasmic Male Sterility in the Cultivars of Eggplant (Solanum melongena L.) Carrying the Cytoplasm of S. violaceum Ort

Shiro Isshiki 한국원예학회 2006 한국원예학회 기타간행물 Vol.- No.-

New method to measure whole-wavelength transmittance of TCO substrates for thin-film silicon solar cells

Masanobu Isshiki,Porponth Sichanugrist,Yusuke Abe,Takuji Oyama,Hidefumi Odaka,Makoto Konagai 한국물리학회 2014 Current Applied Physics Vol.14 No.12

High transmittance of transparent conductive oxide (TCO) substrates is one of the most important factors for achieving high efficiency in thin-film silicon solar cells. Immersion (IM) method with CH2I2 liquid is widely used for the evaluation of optical properties (transmittance, reflectance and absorption) for TCO substrates with textured surface in order to reduce the scattering at the TCO surface. However, in order to measure transmittance accurately, three problems have been found. (1) CH2I2 liquid itself absorbs the light in short wavelength region. (2) The transmittance around the absorption edge of CH2I2 liquids is very sensitive to its amount. (3) Scattering cannot be suppressed when the scattering surfaces are more than 2 surfaces (for example, TCO on reactive ion etching (RIE) processed glass). To overcome these problems, we proposed a new setup to measure optical properties of TCO substrates by holding the samples inside the integral sphere. As the results, we have confirmed that their absorption in all wavelength could be measured accurately and the transmittance measured by the new method was well consistent with the external quantum efficiency (EQE) of the fabricated cell while the transmittance measured with conventional IM method showed differently. Therefore, this new method could be a useful tool to evaluate TCO substrates for thin-film silicon solar cells.

日本語母語話者と韓國人日本語學習者による終助詞「よ」の使用實態 -談話完成テストの調査結果に基づいて-

一色舞子 ( Isshiki Maiko ) 한국일본근대학회 2019 일본근대학연구 Vol.0 No.63

本稿では、日本語敎育の場において終助詞「よ」を效果的に提示することを目指し、次の通り考察した。まず、「よ」が使用され得る主な場面を、①「情報の提示·是正の場面」、②「承諾·是認の場面」、③「一方的·反抗的な場面」の三つに分類した。次に、この分類に基づく談話完成テストを實施し、日本語母語話者と韓國人日本語學習者の「よ」の使用實態を調査した。その結果に基づき、「よ」を效果的に提示するための要点について檢討し、次のような提案をした。まず、提示する際の優先順位は、場面①の「よ」、場面②の「よ」、場面③の「よ」である。場面①は母語話者の「よ」の使用率も高く、インポライトネスやFTA(フェイス侵害行爲)となる可能性も少ないため、優先的に提示すべきである。場面③は「よ」以外の形式でも反抗的態度を示すことができるため、優先順位は低い。しかし、この場面での「よ」の使用はインポライトネスやFTAとなる可能性が高い反面、親しみの表明にもなるため、それらの点について解說が必要である。場面②は「よ」の使用が必須的な場面であっても、學習者の「よ」の使用率が低く、文脈的不適格となる「よ」のない形の使用率が高い。その一方で「よ」の使用によってインポライトネスやFTAの可能性が高まる場合もある。それらの点を意識した解說が必要である。 In order to present the final particle “yo” effectively in Japanese language education, I considered the following: the main scenes where “yo” can be used are classified into (1) “the scene of information presentation / correction”, (2) “the scene of acceptance / approval”, and (3) “the scene of one-sided / rebellious attitude”. Next, the discourse completion test (DCT) based on this classification was conducted to investigate the use of “yo” by Japanese native speakers and Korean learners of Japanese. Based on the results, I examined the points to be conscious of in presenting “yo” effectively in Japanese language education. First, when presenting “yo” in Japanese language education, the priorities are “yo” in (1) above, “yo” in (2) and “yo” in (3). “Yo” in (1) should be given preference because the usage rate of “yo” by native speakers is high and the risk of impoliteness and FTA (face threating act) is small. In (3), we can show a rebellious attitude in not only “yo” but also other forms, so the priority is low. However, while the use of “yo” in this scene has the risk of impoliteness and FTA, it can also serve as an expression of familiarity, so a detailed explanation of these points is necessary. In (2), it was revealed that even if in the case that the use of “yo” is essential, the usage rate of “yo” by learners was low and the usage rate of the form without “yo”, which is contextually ineligible, was high. On the other hand, sometimes the use of “yo” in this scene may increase the risk of impoliteness and FTA. An explanation which takes these points into account is necessary.

An Axisymmetrical Dock in Waves

H. Isshiki,J.H. Hwang 대한조선학회 1976 大韓造船學會誌 Vol.13 No.2

수소 열처리에 따른 구리 박막의 응집 거동 현상

베준우,임재원,Minoru Isshiki 대한금속재료학회 2004 대한금속·재료학회지 Vol.42 No.9

The agglomeration and time dependence of Cu films in Cu(100 nm)/Ta(50 nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650℃ for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that the nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.

음의 기판 바이어스에 의한 탄탈 박막내의 주요불순물의 농도감소

임재원,Isshiki, Minoru 대한금속재료학회 2005 대한금속·재료학회지 Vol.43 No.4

Ta films were deposited on Si (100) substrates at substrate bias voltages of 0 V, -50 V, and -125 V by a non-mass separated ion beam deposition. Secondary ion mass spectrometry (SIMS) and glow discharge mass spectrometry (GDMS) were used to determine the concentrations of dominant impurity elements, i.e., H, C, N, and 0, which are likely to contaminate Ta films during the deposition. The GDMS results revealed that dominant impurities during the deposition were C, N, and 0 elements and many unknown peaks observed in the SIMS spectra of the Ta film were assigned to cluster states such as C_(x)H_(x), O_(x)H_(x), C_(x)O_(x)H_(x). Furthermore, it was found that the concentrations of these impurities in the Ta films can be controlled by the negative substrate bias voltage. (Received September 7, 2005)

기판 바이어스에 의한 구리 seed layer의 특성 향상

임재원,Isshiki, Minoru 대한금속재료학회 2004 대한금속·재료학회지 Vol.42 No.2

Cu films as a seed layer were deposited on Si (100) substrates by applying a negative substrate bias voltage. The electrical resistivity, surface roughness, impurity content and step coverage of the Cu films were investigated using the resistivity measurement, X-ray diffraction analysis, atomic force microscopy, secondary ion mass spectroscopy and scanning electron microscopy. The Cu films deposited at the substrate bias voltage of -50 V showed higher purity, stronger (111) preferred orientation, smoother surface and better step coverage than those of the Cu films deposited without the substrate bias voltage. The electrical resistivity of the Cu films considerably increased as the film thickness decreased. In the case of Cu(100nm)/Ta(50nm)/Si structures, the Cu films deposited by applying the substrate bias voltage maintained a complete (111) preferred orientation without (200) texture even after the thermal annealing at 450℃ for 60 min.

Precise Analysis of H, C, N, and O as Dominant Impurities in Cu Films: Complementary Use of SIMS and GDMS

Jae Won Lim 대한금속학회 2005 METALS AND MATERIALS International Vol.11 No.4