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Heather Greenlee,Katherine D. Crew,Jillian Capodice,Danielle Awad,Anne Jeffres,Joseph M. Unger,Danika L. Lew,Lisa K. Hansen,Frank L. Meyskens Jr,James L. Wade III,Dawn L. Hershman 사단법인약침학회 2015 Journal of Acupuncture & Meridian Studies Vol.8 No.3
Robust methods are needed to efficiently conduct large, multisite, randomized, controlled clinical trials of acupuncture protocols. The Southwest Oncology Group (SWOG) S1200 trial is a randomized, controlled (i.e., sham-controlled and waitlist-controlled) trial of a standardized acupuncture protocol for treating aromatase inhibitor (AI)-associated arthralgias in early-stage breast cancer patients (n = 228). The primary objective of this study was to determine whether true acupuncture administered twice weekly for 6 weeks, as compared to sham acupuncture or a waitlist control, reduced AI-associated joint pain at 6 weeks as assessed by patient reports. The study was conducted at 11 institutions across the United States. The true acupuncture protocol was developed using a consensus-based process. The true acupuncture and the sham acupuncture protocols each consisted of 12 sessions administered for 6 weeks, followed by one weekly session for 6 weeks. The true acupuncture protocol used standardized protocol points, and the standardized acupoints were tailored to a patient's joint symptoms. The similarly standardized sham acupuncture protocol utilized superficial needling of nonacupoints. Standardized methods were developed to train and monitor acupuncturists and included online and in-person training, study manuals, monthly phone calls, and remote quality assurance monitoring throughout the study period. The research staff similarly received online and in-person training and monthly phone calls.
Defect Reduction in MBE-Grown AlN by Multicycle Rapid Thermal Annealing
Jordan D. Greenlee,Brendan Gunning,Boris N. Feigelson,Travis J. Anderson,Andrew D. Koehler,Karl D. Hobart,Francis J. Kub,W. Alan Doolittle 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.1
Multicycle rapid thermal annealing (MRTA) is shown to reduce thedefect density of molecular beam epitaxially grown AlN films. Nodamage to the AlN surface occurred after performing the MRTA processat 1520°C. However, the individual grain structure was altered, with theemergence of step edges. This change in grain structure and diffusion ofAlN resulted in an improvement in the crystalline structure. The RamanE2 linewidth decreased, confirming an improvement in crystal quality. The optical band edge of the AlN maintained the expected value of6.2 eV throughout MRTA annealing, and the band edge sharpened afterMRTA annealing at increased temperatures, providing further evidence ofcrystalline improvement. X-ray diffraction shows a substantial improvementin the (002) and (102) rocking curve FWHM for both the 1400 and1520°C MRTA annealing conditions compared to the as-grown films,indicating that the screw and edge type dislocation densities decreased. Overall, the MRTA post-growth annealing of AlN lowers defect density,and thus will be a key step to improving optoelectronic and powerelectronic devices.
Power Electronic Materials Research to Enable Next Generation GaN Power Switches
Charles R. “Chip” Eddy,N. Nepal,V.R. Anderson,C.R. English,N.Y. Garces,V.D. Wheeler,B.N. Feigelson,J.D. Greenlee,M.J. Tadjer,A.D. Koehler,T.J. Anderson,T.I. Feygelson,B.B. Pate,M.A. Mastro,F.J. Kub,K. 한국진공학회 2017 한국진공학회 학술발표회초록집 Vol.2017 No.8