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LIGA-like 공정을 이용한 마이크로 부품 복제용 Ni과 Ni-W 금형 제조 및 특성
황완식,박준식,강영철,조진우,박순섭,이인규,강성군,Hwang, W.S.,Park, J.S.,Kang, Y.C.,Cho, J.W.,Park, S.S.,Lee, I.G.,Kang, S.G. 한국재료학회 2003 한국재료학회지 Vol.13 No.1
Electroplated Ni and Ni-W micro-molds using LIGA-like process for replication of micro-components such as microfluidic parts and micro optical parts have been investigated. In general, it is hard to produce micro-parts using conventional mechanical processes. Micro-mold formed by LIGA-like process could fabricate micro-parts with high aspect ratio. In this paper, fabrication and properties of electroplated Ni molds with varying applied current types as well as those of Ni-W molds were investigated. Ni molds fabricated under pulse-reverse current showed the highest hardness value of about 160 Hv. Ni-W molds showed the hardness of about 500 Hv which was much harder than that of Ni electroplated molds. The above results suggested that high quality micro-molds could be fabricated by using Ni electroplating of pulse-reverse type for core molds and sequential Ni-W alloys coating.
Kim, H.H.,Matthijnssens, J.,Kim, H.J.,Kwon, H.J.,Park, J.G.,Son, K.Y.,Ryu, E.H.,Kim, D.S.,Lee, W.S.,Kang, M.I.,Yang, D.K.,Hyun, B.H.,Park, S.I.,Park, S.J.,Cho, K.O. Elsevier Science 2012 INFECTION GENETICS AND EVOLUTION Vol.12 No.7
Group A rotaviruses (RVAs) are agents causing severe gastroenteritis in infants and young animals. G9 RVA strains are believed to have originated from pigs. However, this genotype has emerged as the fifth major human RVA genotype worldwide. To better understand the relationship between human and porcine RVA strains, complete RVA genome data are needed. For human RVA strains, the number of complete genome data have grown exponentially. However, there is still a lack of complete genome data on porcine RVA strains. Recently, G9 RVA strains have been identified as the third most important genotype in diarrheic pigs in South Korea in combinations with P[7] and P[23]. This study is the first report on complete genome analyses of 1 G9P[7] and 3 G9P[23] porcine RVA strains, resulting in the following genotype constellation: G9-P[7]/P[23]-I5-R1-C1-M1-A8-N1-T1-E1-H1. By comparisons of these genotype constellations, it was revealed that the Korean G9P[7] and G9P[23] RVA strains possessed a typical porcine RVA backbone, similar to other known porcine RVA strains. However, detailed phylogenetic analyses revealed the presence of intra-genotype reassortments among porcine RVA strains in South Korea. Thus, our data provide genetic information of G9 RVA strains increasingly detected in both humans and pigs, and will help to establish the role of pigs as a source or reservoir for novel human RVA strains.
High-performance liquid chromatography method development for the quality control of Ginkgonis Semen
Le, V.N.H.,Lee, W.,Kim, Y.H.,Chae, G.H.,Chin, Y.W.,Kim, K.T.,Kang, J.S. Elsevier ; King Saud University 2017 Arabian Journal of Chemistry Vol.10 No.6
<P>Ginkgonis Semen (GS) is the seed of Ginkgo biloba Linne and a valuable material for herbal medicines and functional foods in China, Japan and Korea. The main bio-compounds of GS are GA, GB and GC like the leaves. There are many studies for the analysis of ginkgolides in the leaves or leaves extract of G. biloba because the leaves extract is a valuable material in pharmaceutical industries. However, there is no efficient analytical method for the quality control of GS based on the quantitation of ginkgolides because of matrix effect induced by different chemical composition. So, there are no content criteria of GS in Pharmacopoeia of Korea, Japan and China until now. This study aimed to develop HPLC method using ginkgolides based on the quantitation of GA, GB and GC for the quality control of GS with the optimization of sample preparation to enhance the analytical sensitivity and reproducibility. At first, defatting process using petroleum ether and liquid-liquid extraction were applied for sample preparation to remove matrix effect. The HPLC-ELSD method was developed with the mobile phase of a 0.5% aqueous acetic acid and methanol-acetonitrile solution (1: 1 ratio) under gradient conditions. GA, GB and GC contents in GS were different between Korea and China. The mean quantity of Korean samples was 4.85 +/- 2.33 lg/g GA, 48.38 +/- 5.10 lg/g GB, and 37.83 +/- 7.64 lg/g GC. Those contents of Chinese samples were higher than Korean samples as 9.39 +/- 2.51 lg/g GA, 123.59 +/- 26.24 lg/g GB and 53.39 +/- 4.97 lg/g GC. It indicated that the discrimination of GS between Korea and China could be achieved by marker compound contents. Furthermore, the geographical discrimination of GS between Korea and China was confirmed by PCA using the quantitative data of marker compounds. By statistical analysis, the calculated content criteria of GS by regression method were 2.35 lg/g of GA, 29.20 lg/g of GB, and 27.75 lg/g of GC, based on dry weight. Thus, our HPLC method shows potential toward the development of a universal quality control methodology to quantify GS quality and origin. (C) 2016 The Authors. Production and hosting by Elsevier B.V. on behalf of King Saud University.</P>
Windows CE 기반의 PMP용 UCC 메신저 구현
강민구(Kang M.G.),박성욱(Park S.W.),강동우(Kahng D.W.),전종서(Jeon J.S.),고재용(Ko. J.Y.) 한국멀티미디어학회 2008 한국멀티미디어학회 학술발표논문집 Vol.2008 No.2
신기술의 발달로 인해 유선 인터넷뿐만 아니라 무선 인터넷이 급속히 보급되고 있다. 또한 desktop PC뿐만 아니라 PMP, PDA, 휴대폰과 같은 여러 종류의 단말기를 이용한 인터넷 사용이 증가하고 있다. 이에 따라 많은 PMP용 어플리케이션들이 PMP에 탑재되고 있다. 본 연구는 일반 PC를 대상으로 하는 메신저와 더불어 Windows CE 5.0을 OS로 사용하는 PMP를 대상으로 하는 UCC 메신저를 설계한다. 또한 사용자가 메신저 프로그램 이용 시 작은 크기의 키보드를 사용함으로서 가지는 불편을 해소하고자 터치스크린을 이용하여 텍스트 이미지를 이용하여 메시지를 작성 할 수 있는 가능을 설계하였다.
The Characteristics of SOI n-MOSFET's by Bonding and Etch-Back Technology
Kang, S. W.,Kang, W. G.,Ahn, K. Y.,Yu, H. K.,Yun, S. J.,Yi, K. S.,Cho, D. H.,Kang, S. W. 대한전자공학회 1991 ICVC : International Conference on VLSI and CAD Vol.2 No.1
Silicon-on-insulator (SOI) substrates are prepared by silicon direct banding (SDB) and etchback processes and nMOSFET's of enhancement mode are fabricated on the SOI substrates. Active areas are defined by modified local oxidation of silicon (LOCOS) which also provides isolation. The silicon film of SOI is 0.25㎛ thick. The transistor is farmed using a self-aligned n ^+ polysilicon gate NMOS processes.