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Defect Reduction in MBE-Grown AlN by Multicycle Rapid Thermal Annealing
Jordan D. Greenlee,Brendan Gunning,Boris N. Feigelson,Travis J. Anderson,Andrew D. Koehler,Karl D. Hobart,Francis J. Kub,W. Alan Doolittle 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.1
Multicycle rapid thermal annealing (MRTA) is shown to reduce thedefect density of molecular beam epitaxially grown AlN films. Nodamage to the AlN surface occurred after performing the MRTA processat 1520°C. However, the individual grain structure was altered, with theemergence of step edges. This change in grain structure and diffusion ofAlN resulted in an improvement in the crystalline structure. The RamanE2 linewidth decreased, confirming an improvement in crystal quality. The optical band edge of the AlN maintained the expected value of6.2 eV throughout MRTA annealing, and the band edge sharpened afterMRTA annealing at increased temperatures, providing further evidence ofcrystalline improvement. X-ray diffraction shows a substantial improvementin the (002) and (102) rocking curve FWHM for both the 1400 and1520°C MRTA annealing conditions compared to the as-grown films,indicating that the screw and edge type dislocation densities decreased. Overall, the MRTA post-growth annealing of AlN lowers defect density,and thus will be a key step to improving optoelectronic and powerelectronic devices.
Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.
Ahn, Jaehui,Mastro, Michael A,Klein, Paul B,Hite, Jennifer K,Feigelson, Boris,Eddy, Charles R,Kim, Jihyun Optical Society of America 2011 Optics express Vol.19 No.22
<P>The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.</P>
Power Electronic Materials Research to Enable Next Generation GaN Power Switches
Charles R. “Chip” Eddy,N. Nepal,V.R. Anderson,C.R. English,N.Y. Garces,V.D. Wheeler,B.N. Feigelson,J.D. Greenlee,M.J. Tadjer,A.D. Koehler,T.J. Anderson,T.I. Feygelson,B.B. Pate,M.A. Mastro,F.J. Kub,K. 한국진공학회 2017 한국진공학회 학술발표회초록집 Vol.2017 No.8