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Wafaa Abd El-Basit,Safaa Mohamed El-Ghanam,Ashraf Mosleh Abdel-Maksood,Sanaa Abd El-Tawab Kamh,Fouad Abd El-Moniem Saad Soliman 한국원자력학회 2016 Nuclear Engineering and Technology Vol.48 No.5
The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or g fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different g and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.
Studying the operation of MOSFET RC-phase shift oscillator under different environmental conditions
Ibrahim Reiham O.,Abd El-Azeem S.M.,El-Ghanam S.M.,Soliman F.A.S. 한국원자력학회 2020 Nuclear Engineering and Technology Vol.52 No.8
The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 C) up-to135 C and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (IeV) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 C, down to 0.163 A, at 135 C. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.