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Ha, Jewook,Chung, Seungjun,Pei, Mingyuan,Cho, Kilwon,Yang, Hoichang,Hong, Yongtaek American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.10
<P>We report a one-step interface engineering methodology which can be used on both polymer electrodes and gate dielectric for all-inkjet-printed, flexible, transparent organic thin-film transistors (OTFTs) and inverters. Dimethylchlorosilane-terminated polystyrene (PS) was introduced as a surface modifier to cured poly(4-vinylphenol) dielectric and poly(3,4ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) electrodes without any pretreatment. On the untreated and PS interlayer-treated dielectric and electrode surfaces, 6,13-bis(triisopropylsilylethynyl)pentacene was printed to fabricate OTFTs and inverters. With the benefit of the PS interlayer, the electrical properties of the OTFTs on a flexible plastic substrate were significantly improved, as shown by a field-effect mobility (mu(FET)) of 0.27 cm(2)V(-1)s(-1) and an on/off current ratio (I-on/I-off) of greater than 10(6). In contrast, the untreated systems showed a low mu(FET) of less than 0.02 cm(2)V(-1)S(-1) and I-on/I-off similar to 10(4). Additionally, the all-inkjet-printed inverters based on the PS-modified surfaces exhibited a voltage gain of 7.17 VV-1. The all organic-based TFTs and inverters, including deformable and transparent PEDOT:PSS electrodes with a sheet resistance of 160-250 Omega sq(-1), exhibited a light transmittance of higher than 70% (at wavelength of 550 nm). Specifically, there was no significant degradation in the electrical performance of the interface engineering-assisted system after 1000 bending cycles at a radius of 5 mm.</P>
Cho, Illhun,Park, Sang Kyu,Kang, Boseok,Chung, Jong Won,Kim, Jin Hong,Yoon, Won Sik,Cho, Kilwon,Park, Soo Young The Royal Society of Chemistry 2016 Journal of Materials Chemistry C Vol.4 No.40
<▼1><▼1><P><I>Via</I> the cooperative effects of intramolecular charge transfer interactions and extension of conjugation, low-band gap organic semiconductors have successfully been prepared.</P></▼1><▼2><P>A series of low-band-gap π-conjugated molecules comprising <I>N</I>,<I>N</I>′-dihexylindolo[3,2-<I>b</I>]indole as an electron donor (D) and dicyanovinyl as an electron acceptor (A) with A–π–D–π–A architecture have been designed and synthesized to fabricate a single-component ambipolar organic field-effect transistor (OFET). Molecules with different π-bridging units (none, thiophene, and bithiophene) were synthesized and characterized to investigate their structure–property correlation. <I>Via</I> the cooperative effects of intramolecular charge transfer (ICT) interactions and extension of conjugation, the band gap of the newly synthesized molecules was reduced to 1.41 eV in the solution state. Among other compounds, 2H2TIDID-DCV (with a thiophene π-spacer) exhibited highly balanced ambipolar charge transport with hole and electron mobilities of 0.08 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> and 0.09 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>, respectively, from a vacuum-deposited OFET device. Spin-coated OFET devices using OD2TIDID-DCV, in which the hexyl side chains of 2H2TIDID-DCV are replaced by 2-octyldodecyl groups, also exhibited an ambipolar charge-transporting nature (mobilities of 9.67 × 10<SUP>−2</SUP> cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> for holes and 3.43 × 10<SUP>−3</SUP> cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> for electrons). Both 2H2TIDID-DCV and OD2TIDID-DCV exhibited favorable thin-film morphology for the formation of charge-transporting channels, and structural analyses of these films revealed the same molecular packing characteristics of a three-dimensional lamellar π-stacking structure.</P></▼2></▼1>
Kim, Do Hwan,Lee, Jiyoul,Park, Jeong‐,Il,Chung, Jong Won,Lee, Wi Hyoung,Giri, Gaurav,Yoo, Byungwook,Koo, Bonwon,Kim, Joo Young,Jin, Yong Wan,Cho, Kilwon,Lee, Bang‐,Lin,Lee, Sangyoon WILEY‐VCH Verlag 2011 Advanced functional materials Vol.21 No.23
<P><B>Abstract</B></P><P>In order to fabricate polymer field‐effect transistors (PFETs) with high electrical stability under bias‐stress, it is crucial to minimize the density of charge trapping sites caused by the disordered regions. Here we report PFETs with excellent electrical stability comparable to that of single‐crystalline organic semiconductors by specifically controlling the molecular weight (MW) of the donor‐acceptor type copolymer semiconductors, poly (didodecylquaterthiophene‐<I>alt</I>‐didodecylbithiazole). We found that MW‐induced thermally structural transition from liquid‐crystalline to semi‐crystalline phases strongly affects the device performance (charge‐carrier mobility and electrical bias‐stability) as well as the nanostructures such as the molecular ordering and the morphological feature. In particular, for the polymer with a MW of 22 kDa, the transfer curves varied little (Δ<I>V</I><SUB>th</SUB> = 3∼4 V) during a period of prolonged bias stress (about 50 000 s) under ambient conditions. This enhancement of the electrical bias‐stability can be attributed to highly ordered liquid‐crystalline nanostructure of copolymer semiconductors on dielectric surface via the optimization of molecular weights.</P>
Kim, Jong Soo,Wood, Sebastian,Shoaee, Safa,Spencer, Steve J.,Castro, Fernando A.,Tsoi, Wing Chung,Murphy, Craig E.,Sim, Myungsun,Cho, Kilwon,Durrant, James R.,Kim, Ji-Seon The Royal Society of Chemistry 2015 Journal of Materials Chemistry C Vol.3 No.35
<P>We report detailed analysis of the thin film morphology (molecular packing, molecular conformational order, and vertical phase separation) - performance (charge transport, photocurrent generation, and photovoltaic performance) relationships under nanowire formation and subsequent thermal annealing in polymer:fullerene blends. Nanowires of poly(3-hexylthiophene) (P3HT) are formed by controlled precipitation from solution and blended with [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) to form bulk heterojunction thin films. The formation of nanowires and further thermal annealing result in increased molecular order of the P3HT, where the short-range conformational order is maximised by annealing at 100 °C and decreases when annealed at higher temperatures, but the quality of long-range molecular packing and lamellar packing distance increase with annealing temperature up to 150 °C. The long-range order correlates strongly with an increase in hole mobility, but the reduction in short-range conformational order indicates a slight reduction in planarity of the conjugated backbone in this aggregated polymer morphology. Photoconductive atomic force microscopy reveals enhanced connectivity of the hole transporting nanowire network as a result of thermal annealing. Additionally, we find that the nanowire morphology results in a favourable vertical phase separation, with PCBM enrichment at the electron-extracting surface in the conventional architecture, which is contrary to the non-nanowire case. This effect is further encouraged by thermal annealing, resulting in an enhancement of open-circuit voltage, and represents a morphological advantage over conventional P3HT:PCBM devices. Our study identifies an important interplay between long-range and short-range molecular order in charge generation, transport, extraction, and hence solar cell device performance.</P>
PM6:Y6 벌크 이종 접합 물질을 이용한 고민감도 IGZO 광트랜지스터 구현
정진표(Jinpyeo Jeung),고형민(Hyung min Ko),양석주(Seok Joo Yang),박혁(Hyuk Park),서태원(Taewon Seo),김승모(Seung Mo Kim),이병훈(Byoung Hun Lee),조길원(Kilwon Cho),정윤영(Yoonyoung Chung) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.6
By incorporation of PM6:Y6 bulk heterojunction to the IGZO transistor, a hybrid phototransistor with ultrahigh photoresponsivity and specific detectivity is realized in this paper. A comprehensive study on parameters affecting the device performance was conducted, and the parameters were optimized to achieve maximum performance. As a result, our PM6:Y6/IGZO hybrid phototransistor exhibited excellent performance, with an ultrahigh photoresponsivity of 2.2×10<SUP>8</SUP> A W<SUP>-1</SUP> and specific detectivity of 9.8 × 10<SUP>16</SUP> Jones under light intensity at only 1.03 nW cm<SUP>-2</SUP>.