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포름알데하이드에 폭로된 해부학 실습 학생들의 임파구 자매염색분체교환
백두진,주수자,김기영,이수진,심상효,손정일,심성한,송재철,조율희 大韓産業醫學會 1998 대한직업환경의학회지 Vol.10 No.2
Sister-chromatid exchanges measured in the peripheral lymphocytes of 15 non-smoking medical students after exposure to formaldehyde during 24-week anatomy class showed a small but significant (p=0.0468) increase when compared with samples obtained from the same individuals immediately before exposure. Mean frequencies of sister-chromatid exchange of cultured peripheral lymphocytes were 5.40±0.24 from the samples before exposure and 5.87±0.22 from the same samples after exposure. Breathing-zone air samples collected by formaldehyde monitoring kit with digital colorimeter(SKC) showed a mean concentration of 0.72±0.02 ppm formaldehyde.
후구에 발생한 신경초종 : 1예 보고 Case Report
민보열,박윤관,정용구,정흥섭,이훈갑,이기찬,주정화 대한신경외과학회 1990 Journal of Korean neurosurgical society Vol.19 No.1
We report a rare case of neurilemmoma developed in olfactory groove. This 32-years old male had a history of progressing headache for 4 months. CT scan revealed well demarcated enhancing mass. Angiography revealed mass effect without tumor staining. At operation, the tumor was attached firmly at cribiform plate, well encapsulated and whitish yellow. Pathologic examination revealed a neurilemmoma.
반응성 스퍼터링법으로 AI/AIN/GaAs 커패시터 제조시 (NH<sub>4</sub>)<sub>2</sub>S 처리에 따른 전기적 특성
추순남,권정열,박정철,이헌용,Chu, Soon-Nam,Kwon, Jung-Youl,Park, Jung-Cheul,Lee, Heon-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.1
In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.
반응성 스퍼터링으로 제조한 MIS 소자용 AIN 절연박막의 전기전도 메커니즘
秋順男(Soon-Nam Chu),朴正哲(Jung-Cheul Park),權廷烈(Jung-Youl Kwon),李憲用(Heon-Yong Lee) 대한전기학회 2007 전기학회논문지 Vol.56 No.4
We have studied the variable conditions of reactive sputtering to prepare AIN thin film. The leakage current showed below 10??A/㎠ at the deposition temperature of 250℃ and 300℃ in the field of 0.1 ㎹/㎝, and it was gradually increased and to be saturated in 0.2 ㎹/㎝. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 ㎹/㎝, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.
BTS 방법을 사용한 Low-K 유전체 물질들과 산화막의 Cu 드리프트 확산에 대한 비교 연구
추순남,권정열,김장원,박정철,이헌용,Chu, Soon-Nam,Kwon, Jung-Youl,Kim, Jang-Won,Park, Jung-Cheul,Lee, Heon-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.2
Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.
박정철,추순남,권정렬,이헌용,Park, Jung-Cheul,Chu, Soon-Nam,Kwon, Jung-Youl,Lee, Heon-Yong 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.1
To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.
Hypothalamic lipid-laden astrocytes induce microglia migration and activation
Kwon, Yoon-Hee,Kim, Jiye,Kim, Chu-Sook,Tu, Thai Hien,Kim, Min-Seon,Suk, Kyoungho,Kim, Dong Hee,Lee, Byung Ju,Choi, Hye-Seon,Park, Taesun,Choi, Myung-Sook,Goto, Tsuyoshi,Kawada, Teruo,Ha, Tae Youl,Yu, Wiley (John WileySons) 2017 FEBS letters Vol.591 No.12
<P>Obesity-induced hypothalamic inflammation is closely associated with various metabolic complications and neurodegenerative disorders. Astrocytes, the most abundant glial cells in the central nervous system, play a crucial role in pathological hypothalamic inflammatory processes. Here, we demonstrate that hypothalamic astrocytes accumulate lipid droplets under saturated fatty acid-rich conditions, such as obese environment, and that the lipid-laden astrocytes increase astrogliosis markers and inflammatory cytokines (TNF alpha, IL-1 beta, IL-6, MCP-1) at the transcript and/or protein level. Medium conditioned by the lipid-laden astrocytes stimulate microglial chemotactic activity and upregulate transcripts of the microglia activation marker Iba-1 and inflammatory cytokines. These findings indicate that the lipid-laden astrocytes formed in free fatty acid-rich obese condition may participate in obesity-induced hypothalamic inflammation through promoting microglia migration and activation.</P>