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ByungcheulKim,Sang-BaeYi,Kwang-YellSeo 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
A scaled polysilicon-oxide-nitride-oxide-silicon (SONOS) single-transistor memory cell in a NOR structure with common source lines is proposed for high density, and its operating conditions are demonstrated. The cell area of the SONOS single-transistor memory realized by using 0.35-$\mu$m complementary metal-oxide-semiconductor (CMOS) technology is 1.32 $\mu$m$^2$. A selected cell is programmed by applying 3 V to the gate and $-$5.5 V to the source, drain, and substrate, and is erased by applying $-$5.5 V to the gate and 3 V to the source, drain, and substrate. Drain disturbance is inhibited by applying $-$5.5 V to the gate of an unselected cell sharing the bit-line. Gate program-inhibit is achieved only within the limit of 50 ms of programming time at pre-cycle by applying 0 V to the drain of an unselected cell sharing the word-line. These make it possible to operate from 3-V single power supply.
The determinants of intra-firm trade by overseas affiliates of Korean firms
ByungkiHa,SanghackLee 한양대학교 경제연구소 2016 JOURNAL OF ECONOMIC RESEARCH Vol.21 No.1
Outward foreign direct investment by Korean firms has conspicuously increased since the beginning of this century, leading to the expansion of the network of international production and sales of Korean firms. The intra-firm trade between Korean parent firms and their affiliates abroad has substantially increased as well. Utilizing the survey data compiled by Korea Export and Import Bank, this paper examines the determinants of the extent of intra-firm trade by overseas affiliates of Korean firms, and obtains the following results. The higher the payment of royalties of affiliates, the lower is the extent of intra-firm trade. The longer the presence of the affiliates in host countries, reflecting the localization of the affiliates, the lower is the extent of intra-firm exports. The extent of intra- firm imports by manufacturing industries is negatively correlated with royalty payments and the exchange rate of Korean Won, and is positively correlated with the market size of the host country.
A 10-Gb/s CMOS CDR and DEMUX IC With a Quarter-Rate Linear Phase Detector
Byun,Lee,Shim,Kim,Yu IEEE 2006 IEEE journal of solid-state circuits Vol.41 No.11
<P>This paper presents a 10-Gb/s clock and data recovery (CDR) and demultiplexer IC in a 0.13-mum CMOS process. The CDR uses a new quarter-rate linear phase detector, a new data recovery circuit, and a four-phase 2.5-GHz LC quadrature voltage-controlled oscillator for both wide phase error pulses and low power consumption. The chip consumes 100 mA from a 1.2-V core supply and 205 mA from a 2.5-V I/O supply including 18 preamplifiers and low voltage differential signal (LVDS) drivers. When 9.95328-Gb/s 2<SUP>31</SUP>-1 pseudorandom binary sequence is used, the measured bit-error rate is better than 10<SUP>-15</SUP> and the jitter tolerance is 0.5UIpp, which exceeds the SONET OC-192 standard. The jitter of the recovered clock is 2.1 psrms at a 155.52MHz monitoring clock pin. Multiple bit rates are supported from 9.4 Gb/s to 11.3 Gb/s</P>