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Rock-Hyun Baek,Chang-Ki Baek,Sung-Woo Jung,Yun Young Yeoh,Dong-Won Kim,Jeong-Soo Lee,Kim, D.M.,Yoon-Ha Jeong IEEE 2010 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.9 No.2
<P>The series resistance, <I>R</I> <SUB>sd</SUB> in silicon nanowire FETs (Si-NWFET) is extracted unambiguously, using the <I>Y</I> -function technique, in conjunction with the drain current and transconductance data. The volume channel inversion in Si-NWFET renders the charge carriers relatively free of the surface scattering and concomitant degradation of mobility. As a result, the <I>Y</I> -function of Si-NWFET is shown to exhibit a linear behavior in strong inversion, thereby enabling accurate extraction of <I>R</I> <SUB>sd</SUB>. The technique is applied to nanowire devices with channel lengths 82, 86, 96, 106, 132, and 164 nm, respectively. The extracted <I>R</I> <SUB>sd</SUB> values are shown nearly flat with respect to the gate voltage, as expected from Ohmic contacts but showed a large variation for all channel lengths examined. This indicates the process parameters involved in the formation of series contacts vary considerably from device to device. The present method only requires a single device for extraction of <I>R</I> <SUB>sd</SUB> and the iteration procedure for data fitting is fast and stable.</P>
Rock-Hyun Baek,Chang-Ki Baek,Hyun-Sik Choi,Jeong-Soo Lee,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Kinam Kim,Kim, D M,Yoon-Ha Jeong IEEE 2011 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.10 No.3
<P>In this paper, the volume trap densities <I>Nt</I> are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting <I>Nt</I>, the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/<I>f</I> curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/<I>f</I> noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/<I>f</I> model developed is discussed.</P>
<tex> $C$</tex>– <tex> $V$</tex> Characteristics in Undoped Gate-All-Around Nanowire FET Array
Rock-Hyun Baek,Chang-Ki Baek,Sang-Hyun Lee,Sung Dae Suk,Ming Li,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Jeong-Soo Lee,Kim, D M,Yoon-Ha Jeong IEEE 2011 IEEE electron device letters Vol.32 No.2
<P>Presented in this letter are the <I>C</I>-<I>V</I> data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The <I>C</I>-<I>V</I> curves were examined over a range from accumulation to inversion with varying frequencies and at different electrode configurations. The gate response of the undoped and floating channel is investigated using <I>C</I>-<I>V</I> data, and the inversion charge and carrier mobility are accurately extracted by eliminating the effects of parasitic capacitances and series resistance <I>R</I><SUB>sd</SUB>. These observed data are compared with the data from planar MOS capacitor.</P>