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RISS 인기검색어
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- 저자 : 천성순(Seong Soon Chun) (검색결과 2 건)
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소결 경질 탄화물에 화학 증착법으로 TiC 를 증착 시켰을 때 그 증착층의 성질에 대한 조사
장재필,천성순 대한금속재료학회(대한금속학회) 1981 대한금속·재료학회지 Vol.19 No.3
The growth rate and the mechanical properties of chemically vapor deposited TiC on WC-6% Co substrate were investigated by depositing TiC on varying deposition temperatures, total pressure in the reaction chamber, and the partial pressure of CH₄in gas mixtures. TiC is deposited by two different reactions; such as substrate reaction and hydrocarbon reaction. Each activation energy was calculated at 19 ㎉/mole and 70 ㎉/mole, respectively. The growth rate of TiC coating layer was increased with deposition temperatures, the total pressure in the reaction chamber, and the partial pressure of CH₄in gas mixtures. The microhardness of TiC coating layer was increased until the thickness of coating layer was up to 7㎛. The microhardneas of TiC coating layer was increased as the partial pressure of CH₄was increased. When the partial pressure of CH₄in the gas mixtures was increased TiC coating layer was pronounced <100> preferred orientation. It was found that ηcarbide which is formed by substrate reaction is Co_6W_6C.
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소결 탄화물 공구의 내마모성 향상을 위한 Al2O3 의 화학 증착에 관한 연구
김재곤,박철순,천성순 대한금속재료학회(대한금속학회) 1981 대한금속·재료학회지 Vol.19 No.9
Aluminum oxide was deposited with a CVD-technique onto TiC-coated cemented carbide substrate. The effects of reaction parameters; deposition temperature, total pressure, CO₂/H₂mole ratio, AlCl₃, partial pressure, on the CVD of Al₂O₃were investigated. The experimental results showed that deposition rate was increased with an increase in deposition temperature and total pressure, and maximum deposition rate was obtained when CO₂/H₂mole ratio is unity. It was also found that up to the critical value of AlCl₃partial pressure, deposition rate was increased with an increase in AlCl₃partial pressure, but above the critical value deposition rate was decreased with an increase in AlCl₃partial pressure. The structure of Al₂O₃was changed from amorphous one to crystalline with an increase in deposition temperature. The reaction of Al₂O₃formation was controlled by chemical kinetics at lower temperature (< 1000℃), but the control mechanism of the reaction changed to mass transport at higher temperature (> 1000℃).
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