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세라믹 필터가 epoxy molding compound의 물리적 특성에 미치는 영향
김래은,전형조,김석윤,김용석 한국마이크로전자및패키징학회 1997 하이브리드마이크로일렉트로닉스 Vol.4 No.2
In this study, SIC powder and shisker, AIN powder were used as fillers for epoxy matrix composites and the physical properties of the composites including thermal conductivity, thermal expansion coefficient, and dielectric constant were measured. The thermal conductivity increased non-linearly with the content of the filler volume content. The fillers with morphology of higher aspect ratio such as whiskers were found to be more effective in increasing the thermal conductivity, which should be due to higher contact area between the fillers. Thermal expansion coefficient decreased more when the fillers with higher aspect ratio compared with the filler with spherical morphology.
고온 자전 반응 합성법에 의한 질화 알루미늄의 반응기구에 관한 연구
金錫胤,全炯朝 弘益大學校 科學技術硏究所 1996 科學技術硏究論文集 Vol.7 No.1
The aluminum nitride was synthesized by the self-propagating high temperature synthesis(SHS). The synthesis was used Aluminum powder mixed with AIN power as reactant and the control factors affected to synthesis were considered compect density, pressure of reaction gas, AIN diluent content and aluminum powder size. In this study, the formation mechanism of AIN synthesized by SHS was studied on order to obtain uniform AIN powder size and morpholigy. Based on the morphology of AIN synthesized and the calculation of the temperature of Al Powder as a function of AlN layer thickness, the formation mechanism of AlN was proposed.
김병호,정양준,최춘태,박문규,정상조,전형일,황윤택,태성일,이형재 全北大學校 基礎科學硏究所 1991 基礎科學 Vol.14 No.1
수평 Bridgman 방법으로 성장한 GaAs 단결정에 대하여 광전도도 측정방법을 이용하여 광이온화 단면적 스펙트럼을 측정하였다. 0.65-1.5eV의 hv 영억에서 0.73, 0.78, 0.82, 0.96 및 1.07eV 문턱 에너지를 나타내는 단면적이 관측되었다. 0.78eV의 단면적은 Cr을 도우핑한 시료에서만 관측되는 것으로 Cr^2+/Cr^3+ 전이에 의한 것으로 판단된다. 나머지 4개의 단면적은 In, O, Cr 등의 도우핑 불순물에 관계없이 모든 시료에서 관측되고, 0.82eV는 EL2→Γ_1C 전이에 의한 것이며, 1.07eV의 단면적은 EL2 중심간의 전이와 Cu^-_Ga→Γ_1C가 겹쳐져서 관측되는 것으로 간주된다. 0.73, 0.82, 0.96eV 단면적의 상대적인 크기분포는 In을 도우핑한 시료에서 가장 낮게 관측되며, 시료에 따라 비슷한 변화의 경향을 보여주고 있는 것으로 이들은 다같이 결정결합에 의한 것일 가능성을 보여주고 있으나, 0.73과 0.96eV에 대해서는 각각 O와 Fe에 의한 것일 가능성도 논의되었다. Using photoconductivity measurements, spectral distributions of photoionization cross sections were studied on various GaAs crystals grown by horizontal Bridgman technique. In the photon energy range from 0.65 to 1.5 eV, threshold energies of 0.73, 0.78, 0.82, 0.96 and 1.07eV were determined for five different cross sections observed in the crystals. The cross sections with 0.78eV were measured only in Cr-doped samples and are believed to be due to Cr^2+/Cr^3+ transition. The other four cross sections were observed in common for all the samples, regardless of the doped impurities such as In, O and Cr. The cross section of 0.82eV is due to EL2-Γ_1C transition, and the threshold energy of 1.07eV is regarded as overlap of intracenter transition of EL2 with Cu^-_GA→Γ_1C transition. The relative magnitudes of the cross sections with theshold energies of 0.73, 0.82, 0.96eV exhibited similar variations with photon energy and the lowest value is observed in Indoped GaAs crystal. This fact is likely to indicate that all the three different cross sections are originated from crystal defects. In the cases of 0.73 and 0.96eV, however, impurities of 0 and Fe are discussed here as possible origins of the transitions.