http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
CdTe 감마선 검출소자의 Schottky Contact에 관한 연구
장충근,윤만영,유중열,김영전,황선태 충남대학교 자연과학연구소 1989 忠南科學硏究誌 Vol.16 No.1
To obtain the elementary data about CdTe Schottky diode, we made Schottky Contact by electroless deposition method after growing the CdTe single crystal which has zinc blend structure with CdTe powder(4N). From the result of the experiments on the Schottky diode, we found that the reverse current in N-type Schottky diode is less than that in P-type but barrier is higher in N-type. And as the deposition time(reaction time) of Schottky Contact becomes longer or the reaction temperature higher, the barrier height and contact resistance are decreased.
CdTe 감마선 검출소자의 표면거칠기가 Au/CdTe Schottky Barrier의 전기적 특성에 미치는 영향
장충근,송재용,최철규,오희필,황선태 충남대학교 기초과학연구소 1990 연구논문집 Vol.10 No.-
The effects of the surface roughness of CdTe gammaray detector chips on the electrical characteristics of Au/n-CdTe Schottky barrier have been investigated using the Schottky diode prepared with he surface roughness in the range of 0.1∼0.5㎛. Measured for the diode are the electrical resistance characteristics, the potential barrier height and the electrical noise. The dynamic resistance is observed to decrease exponentially as R_d=370exp(-9.94ㆍRa)with the surface roughness(Ra) of the CdTe wafers. The potential barrier hight shows an exponential decay like ∮_B=0.88exp(-0.75ㆍRa) with the increase in roughness while the electrical noise shows a linear growth.
CdTe 감마선 검출소자의 Schottky Contact에 관한 연구
장충근,윤만영,유중열,김영전,황선태 충남대학교 기초과학연구소 1989 연구논문집 Vol.9 No.-
To obtain the elementary data about CdTe Schottky diode, we made Schottky Contact by electroless deposition method after growing the CdTe single crystal which has zinc blend structure with CdTe powder (4N). From the result of the experiments on the Schottky diode, we found that the reverse current in N-type Schottky diode is less than that in P-type but barrier height is higher in N-type. And as the deposition time(reaction time) of Schottky Contact becomes longer or the reaction temperature higher, the barrier height and contact resistance are decreased.