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권순우(Kwon, Soon-Woo),이종협(Yi, Jong-Heop),윤세왕(Yoon, Se-Wang),김동환(Kim, Dong-Hwan) 한국신재생에너지학회 2009 신재생에너지 Vol.5 No.1
The surface etching characteristics of single crystalline silicon wafer were investigated using potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH). The saw damage layer was removed after 10min by KOH 45wt% solution at 80?C. The wafer etched at high temperature (90?C) and in low concentration (4wt%) of TMAH solution showed an increased etch rate of silicon wafer and wavy patterns on the surface. Especially, pyramidal textures were formed in 4wt% TMAH solution without alcohol additives.