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김항규,신장규,정우철,남태철 ( Hang Kyoo Kim,Jang Kyoo Shin,Woo Chul Jung . Tae Chul Nam ) 한국센서학회 1994 센서학회지 Vol.3 No.1
A SIMOX SOI Hall sensor has been fabricated and its characteristics were measured at temperatures between 20℃ and 260℃. Output Hall voltage varied linearly with supplied current, showing good linearity. The Hall voltage and the offset voltage initially increased slightly and then decreased with temperature due possibly to the electron mobility variation with temperature. Nearly constant product sensitivity throughout the temperature range indicates that this Hall sensor could be used for high temperature applications.
n-ITO/p-PSL 이종접합형 광검출 소자의 제조 및 그 특성
김항규,신장규,이종현,송재원 ( Hang Kyoo Kim,Jang Kyoo Shin,Jong Hyun Lee,Jae Won Song ) 한국센서학회 1995 센서학회지 Vol.4 No.1
n-ITO/p-PSL heterojunction photodetector have been fabricated on the Si wafer by using ITO(indium tin oxide) and PSL(porous silicon layer). They were anodized selectively by using silicon nitride and Ni-Cr/Au and were passivated by using ITO as well as being isolated by using mesa structure. With white light from 0 to 3000 Lux, the photocurrent varied linearly with incident light intensity. The reverse characteristics of fabricated devices were very stable up to a bias voltage of -40V and dark current density was about 40nA/㎟. When the device was exposed by Xe lamp whose wavelength range from 400nm to 1100nm, the maximum photo responsivity was about 0.6A/W between 600 and 700nm. Variation of the characteristics of fabricated devices after 5 weeks was negligible.
H₂S 가스로 유황처리된 GaAs 표면의 AES 및 XPS 분석
신장규(Jang-Kyoo Shin),이동근(Dong-Geun Lee),김항규(Hang-Kyoo Kim) 한국진공학회(ASCT) 1994 Applied Science and Convergence Technology Vol.3 No.3
본 연구에서는 HCl 또는 NH₄OH로 산화막을 식각한 GaAs 표면에 H₂S 가스를 이용하여 유황처리하였다. 표면의 화학적 조성 및 결합상태를 측정하기 위하여 AES(Auger electron spectroscopy) 및 XPS(X-ray photoelectron spectroscopy)를 사용하였다. 시편들은 30, 200 및 350℃로 가열하면서 H₂S 가스와 반응시켰다. 이때 유황은 GaAs 표면의 Ga 원자 및 As 원자와 화학결합을 형성하고 있음이 밝혀졌다. 또한 350℃로 가열된 시편이 30℃ 또는 200℃로 가열된 시편보다 표면에 결합된 유황의 양이 많은 것으로 나타났다. 아울러 (NH₄)₂S 수용액 또는 Na₂S 수용액으로 유황처리된 경우와 동일하게 H₂S 가스로 유황처리된 GaAs 표면에서는 Ga 산화막 및 As 산화막이 거의 관측되지 않았다. This paper presents experimental results on the sulfur treatment using H₂S gas to HCl-etched and NH₄OH-etched GaAs surfaces. AES(Auger electron spectroscopy) and XPS(x-ray photoelectron spectroscopy) spectra were obtained in order to determine the surface chemical species and their bonding states. The experiments were conducted with H₂S exposed samples at substrate temperatures of 30, 200, and 350℃. Sulfur is shown to bond to both Ga and As. The H₂S exposed surfaces heated at 350℃ had a higher sulfur coverage than those that were heated at 30℃ or 200℃. Like (NH₄)₂S or Na₂S solution treated samples, Ga or As oxide was not found after the H₂S treatment.
r김항규,신장규,이종현,신용현,김현태 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1
Porous silicon photodetectors with a vertical n-ITO/p-PSL heterojunction structure have been fabricated. From I-V characteristics of fabricated devices with white light from 0 to 3000 Lux, we find that the photocurrent varies linearly with incident light intensity. The transparent ITO affords light emission through the top surface of the device, as well as providing passivation and hence long-tens stability.