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대면적 미세 금속전극 인쇄를 위한 원통형 마이크로 접촉 인쇄공정
김준학(Jun-Hak Kim),이미영(Mi-young Lee),송정근(Chung-Kun Song) 大韓電子工學會 2011 電子工學會論文誌-SD (Semiconductor and devices) Vol.48 No.6
본 논문은 PDMS(polydimethyl siloxane) 스탬프를 이용한 원통형 마이크로 접촉인쇄(roll-type micro-contact printing)에 관한 것으로 대면적 플라스틱 기판에 미세 금속 전극 인쇄를 PDMS 스탬프의 평탄화, 은 나노 잉크의 은 함량, 공정변수인 코팅속도, 잉킹속도, 프린팅속도, 프린팅 압력을 조절하여 가장 우수한 인쇄특성을 나타내는 조건을 도출하였다. 그 결과 면적 4.5㎝ × 4.5㎝ 기판에 최소선폭 10 ㎛, 두께 300 ㎚, 표면거칠기 40 ㎚ 이하, 비저항 2.08 × 10<SUP>-5</SUP> Ω·㎝의 특성을 갖는 은미세 전극을 인쇄하였다. This paper is related to a roll-type micro-contact printing process. The proper parameters such as coating velocity, inking velocity, printing velocity and printing pressure as well as Ag contents of Ag ink were extracted to perform the fine patterning of Ag electrodes. Additionally we developed a process for PDMS with high uniform thickness. Finally, we obtained the Ag fine electrodes on 4.5㎝ × 4.5㎝ plastic substrate with the line width of 10 ㎛, thickness less than 300 ㎚, surface roughness less than 40 ㎚, and the specific resistance of 2.08 × 10<SUP>-5</SUP> Ω·cm.
터어키안 주위 종양으로 오인된 침윤성 아스페르길루스 접형동염
김준학 ( Jun Hak Kim ),최경미 ( Gyeong Mi Choi ),안성기 ( Sung Ki Ahn ),송준호 ( Joon Ho Song ) 대한뇌종양학회·대한신경종양학회·대한소아뇌종양학회 2008 대한뇌종양학회지 Vol.7 No.2
Invasive Aspergillus sphenoidal sinusitis rarely occurs and it is a potentially life threatening disease. It can be divided into an acute fulminant form with rapid disease progression and a chronic non-fulminant form. We report a case of fulminant invasive Aspergillus sphenoidal sinusitis in a 69-year-old diabetic woman who presented with ptosis of left eye and headache. Neuroimaging studies showed osteolytic tumor-like lesion in the sphenoidal sinus. Mass removal was performed using endonasal transsphenoidal approach and surgical biopsy revealed fungal hyphae in the specimen. In spite of using massive antifungal agents, the patient died of brain invasion and septisemia.
고순도 AlN분체 합성을 위한 Al-N-H-Cl 반응계의 열역학적 평형조성
현상훈,김준학 연세대학교 산업기술연구소 1984 논문집 Vol.16 No.2
Thermodynamic equilibrium compositions in the Al-N-H-Cl system were determined to predict the theoretical equilibrium yields of AlN by the vapor phase reaction of NH₃ and AlCl₃. The calculation procedure of the equilibrium composition was to determine the mixture composition which corresponds to the minimum total Gibbs free energy of the reacting system. The equilibrium yields of AlN at 600-1200 K showed above 90% when the initial amounts of AlCl₃and of NH₃were equal and below ?? moles, respectively. The effect of the total pressure on the equilibrium yields was insignificant. The domain above 95% yields according to the initial ratio of AlCl₃to NH₃at 1200 K and 1300 K was also given. The theoretical aspects for the synthesis of high-purity AlN powders by the gas phase reaction of AlCl₃and NH₃were discussed.