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부산석고 시용에 의한 밭 토양 특성과 마늘의 수량 및 품질에 미치는 영향
김영남,조주영,윤영은,최현지,정미선,이미나,김권래,이용복,Kim, Young-Nam,Cho, Ju Young,Yoon, Young-Eun,Choe, Hyoen Ji,Cheong, Mi Sun,Lee, Mina,Kim, Kwon-Rae,Lee, Yong Bok 한국환경농학회 2021 한국환경농학회지 Vol.40 No.1
BACKGROUND: Globally, large amounts of phosphogypsum (PG), which is a by-product of the phosphate fertilizer production, is deposited in open areas. As PG contains calcium, phosphate, and sulphate, it can be used as a soil amendment in farmlands. This study was conducted to investigate the effects of PG application on properties of field soil and yield and quality of garlic (Allium sativum L.), and to seek appropriate level of PG application into the field. METHODS AND RESULTS: This experiment was conducted by applying PG at four different levels that were adjusted based on 65% calcium base saturation in the field soil: 0% (control), 50% (PG50, 100 kg/10a), 100% (PG100, 200 kg/10a), and 150% (PG150, 300 kg/10a). Following cultivation, soil electrical conductivity (EC), organic matter, available P and exchangeable Ca increased, whilst soil pH decreased. With increase in PG application level, soil EC and exchangeable Ca increased. PG application increased concentrations of water soluble Ca and SO4 across the soil profile, especially in PG150. The highest yield of garlic was found in PG100 treatment. The plant's uptake for N, P, Ca, and S increased by PG applications, but that for K decreased. Moreover, concentrations of S-related amino acids such as cysteine and methionine in garlic increased by PG applications. The increased content of nutrients and amino acids with PG supply might improve yield, quality, and favor of the crop. CONCLUSION: Overall, PG application at 200 kg/10a into a field had the best effect on improving soil fertility as well as yield and quality of garlic. Further studies are required to maximize efficiencies of PG supply in soil management and production of various crops.
제왕절개분만의 빈도와 적응증의 변화양상 -1980-2003년의 24년간 부산백병원에서 시행한 총 6,051 제왕절개분만 예의 분석-
김영남 ( Young Nam Kim ),강영미 ( Young Mi Kang ),길민경 ( Min Kyung Gil ),김성용 ( Sung Yong Kim ),정대훈 ( Dae Hoon Jeong ),이경복 ( Kyung Bok Lee ),성문수 ( Moon Soo Sung ),김기태 ( Ki Tae Kim ) 대한산부인과학회 2005 Obstetrics & Gynecology Science Vol.48 No.9
정상현(Sang-Hyun JEONG),김용성(Yong-Seong KIM),김재현(Jae-Hyun KIM),김지형(Ji-Hyung KIM),김광호(Kwang-Ho KIM),김영남(Yeong-Nam KIM) 한국정보기술학회 2005 Proceedings of KIIT Conference Vol.2005 No.-
급속 건식 열산화를 이용하여 850~1050 ℃의 온도범위로 초박막 SiO2를 p-Si(100) 위에 성장시켰다. 초박막 산화막의 유전상수는 게이트 전극의 면적과 측정된 커패시턴스로 산출하였다. 초박막 산화막 두께는 ellipsometer와 10 ㎑ C-V특성에서 Maserjian이 제안하는 방법에 따라 평가하였으며 MOS 커패시터에서 측정된 산화막 두께는 33.6Å이었다. 산화막에 대한 전기적 특성을 평가하기 위해 정전용량-전압, 전류-전압 특성을 이용하였으며, C-V 특성에서 산출된 초박막 산화막 두께가 111.6Å인 MOS 커패시터 midgap 부근에서의 최소 계면 준위 밀도는 6~10×1010 /㎝2eV 였다. In this paper, ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850~1050 ℃. Dielectric constant of ultra-thin SiO2 is estimated by the capacitance following the variable area of gate electrode. The 10 ㎑ C-V characteristics are used to estimate the thickness of the ultra-thin oxides following the method proposed by Maserjian, The estimated oxide thickness in this MOS capacitor was about 33.6 Å. The capacitance-voltage, current-voltage characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 Å derived from the C-V curve was ranged from 6 to 10×1010 /㎝2eV.