수렴성빔 전자회절법을 이용한 $SiO_2/Si$ 계면 부위의 격자 변형량 측정

김긍호,우현정,최두진,Kim, Gyeung-Ho,Wu, Hyun-Jeong,Choi, Doo-Jin 한국현미경학회 1995 Applied microscopy Vol.25 No.2

The oxidation of silicon wafers is an essential step in the fabrication of semiconductor devices. It is known to induce degradation of electrical properties and lattice strain of Si substrate from thermal oxidation process due to charged interface and thermal expansion mismatch from thermally grown SiO, film. In this study, convergent beam electron diffraction technique is employed to directly measure the lattice strains in Si(100) and $4^{\circ}$ - off Si(100) substrates with thermally grown oxide layer at $1200^{\circ}C$ for three hours. The ratios of {773}-{973}/{773}-{953} Higher Order Laue Zone lines were used at [012] zone axis orientation. Lattice parameters of the Si substrate as a function of distance from the interface were determined from the computer simulation of diffraction patterns. Correction value for the accelerating voltage was 0.2kV for the kinematic simulation of the [012]. HOLZ patterns. The change in the lattice strain profile before and after removal of oxide films revealed the magnitudes of intrinsic strain and thermal strain components. It was shown that $4^{\circ}$ -off Si(100) had much lower intrinsic strain as surface steps provide effective sinks for the free Si atoms produced during thermal oxidation. Thermal strain in the Si substrate was in compression very close to the interface and high concentration of Si interstitials appeared to modify the thermal expansion coefficient of Si.

수렴성 빔 전자회절법에 원리와 응용

김긍호 ( Gyeung Ho Kim ) 대한금속재료학회 1996 大韓金屬學會會報 Vol.9 No.6

투과전자현미경과 분석법의 소개

김긍호(Gyeung-Ho KIM) 한국물리학회 2023 물리학과 첨단기술 Vol.32 No.7/8

Sc₂O₃와 CeO₂가 첨가된 ZrO₂의 전기전도도

이동석,허장원,김재동,김주선,이해원,김긍호,김대준,이종호,Lee, Dong-Suek,Heo, Jang-Weon,Kim, Jae-Dong,Kim, Joo-Sun,Lee, Hae-Weon,Kim, Gyeung-Ho,Kim, Dae-Jun,Lee, Jong-Ho 한국세라믹학회 2002 한국세라믹학회지 Vol.39 No.4

중저온 영역에서 작동 가능한 고체산화물연료전지(SOFC)의 전해질 재료를 탐색하기 위해 $Sc_2O_3$와 $CeO_2$를 동시에 첨가하여 안정화시킨 $CeO_2$의 상안전성과 전기적 물성을 분석하였다. 분석결과 $Sc_2O_3$와 $CeO_2$를 동시에 첨가하여 안정화시킨 $ZrO_2$는 $1350^{Circ}C∼1550^{Circ}C$까지의 열처리과정중 다른 상전이 없이 상온에서 안정한 입방정상을 유지하였으며 넓은 온도영역($300∼^{Circ}C$)에서 기존의 YSZ보다 훨씬 높은 전기전도도값을 나타냈다. 또한 $Sc_2O_3$와 $CeO_2$가 동시에 첨가된 $ZrO_2$는 기존의 Sc-$ZrO_2$계 전해질 물질보다 훨씬 향상된 장기안정성을 나타내 중저온형 고체산화물 연료전지의 전해질재료로 적합함을 알 수 있었다. The electrical conductivity and phase stability of $ZrO_2$ doped with $Sc_2O_3$ and $CeO_2$ were investigated in order to search for better solid electrolyte material for solid oxide fuel cell. Present study showed that $ZrO_2$ doped with $Sc_2O_3$ and $CeO_2$ exhibited no phase transition during the heat treatment up to $1350^{Circ}C∼1550^{Circ}C$ and was stable as a cubic phase in whole temperature ranges. The $ZrO_2$ doped with $Sc_2O_3$ and $CeO_2$ showed much higher electrical conductivity than YSZ in the temperature range of $300∼^{Circ}C$ and better long term stability than other sc-$ZrO_2$ based electrolyte that showed the possibility as a strong candidate electrolyte material for intermediate-or low-temperature SOFC.

표면복제법을 이용한 세라믹 복합재료 파괴현상의 투과전자현미경 분석

전형우,김긍호,김병호,Jun, Hyeung-Woo,Kim, Gyeung-Ho,Kim, Byung-Ho 한국현미경학회 1996 Applied microscopy Vol.26 No.4

Fracture surfaces of materials contain useful information ranging from crack path to the mechanism of fracture. Since limitation of electron transparency requires a sample in the form of thin foil for TEM observations, it is impossible to extract such information directly from the fracture surfaces. In this study, the method of surface replication from the ceramic fracture surface is employed to characterize the process of crack propagation in ceramic matrix composites using TEM analysis. The surface replica from the fracture surface in ceramic materials provides detailed surface morphology and more importantly, loosened particles on the fracture surface are collected. Electron diffraction and chemical composition analyses of these particles reveal crack path in the specimen. Furthermore, one can determine the mode of fracture by observing the fracture surface morphology from the image of replica. Two examples are given to illustrate the potential of the surface replication technique. In the first example, apparent toughness increase in $B_{4}C-Al$ composites at high strain rate is investigated by surface replication to elucidate the mechanism of fracture at different strain rates. The polytypes of SiC formed during the sintering of SiC-AlN composite and their effect on the fracture behavior of SiC-AlN composite are analyzed in the second example.

활성화 이온빔 처리된 Sapphire기판 위에 성장시킨 MOCVD-GaN 박막의 격자변형량 측정

김현정,김긍호,Kim, Hyun-Jung,Kim, Gyeung-Ho 한국현미경학회 2000 Applied microscopy Vol.30 No.4

사파이어 기판을 이용한 GaN 박막성장에서 완충층의 사용과 기판의 질화처리는 GaN 박막 내의 격자결함을 줄이는 가장 보편적인 방법이다. GaN박막의 초기 핵생성과 성장 거동을 향상시키기 위한 새로운 방법으로 사파이어 표면을 질소 활성화 이온빔으로 처리하는 방법이 시도되었다. 활성화 이온빔 처리의 결과 약 10nm두께의 비정질 $AlO_xN_y$ 층이 형성되었으며 GaN의 성장온도에서 부분적으로 결정화되어 계면 부위에 고립된 비정질 영역으로 존재하였다. 계면에 존재하는 비정질 층은 기판과 박막사이에서 발생하는 열응력을 효과적으로 감소시키는 역할이 가능하며 이를 확인하기 위하여 활성화 이온빔 처리에 의한 GaN박막 내의 격자변형량 차이를 비교하였다. GaN박막에서 얻어진 $[\bar{2}201]$ 정대축고차 Laue도형을 전산모사 도형과 비교하여 격자변형량을 측정하였다. 본 연구의 결과 활성화 이온빔 처리를 하지 않은 기판 위에 성장시킨 GaN박막의 격자변형량은 처리한 경우에 비해 6배 이상 높은 값을 가졌으며 따라서 활성화 이온빔 처리에 의해 GaN박막의 열응력은 크게 감소함을 확인하였다. Introduction of the buffer layer and the nitridation of a sapphire substrate were one of the most general methods employed for the reduction of lattice defects in GaN thin films Brown on sapphire by MOCVD. In an effort to improve the initial nucleation and growth condition of the GaN, reactive ion beam (RIB) of nitrogen treatment of the sapphire surface has been attempted. The 10 nm thick, amorphous $AlO_xN_y$ layer was formed by RIB and was partially crystallized alter the main growth of GaN at high temperature, leaving isolated amorphous regions at the interface. The beneficial effect of amorphous layer at interface in relieving the thermal stress between substrate and GaN film was examined by measuring the lattice strain value of the GaN film grown with and without the RIB treatment. Higher order Laue zone pattern (HOLZ) of $[\bar{2}201]$ zone axis was compared with simulated patterns and lattice strain was estimated It was confirmed that the great reduction of thermal strain was achieved by RIB process and the amount of thermal stress was 6 times higher in the GaN film grown by conventional method without the RIB treatment.

투과전자현미경을 이용한 상전이형 광디스크의 미세조직 관찰

김수철,김긍호,Kim, Soo-Chul,Kim, Gyeung-Ho 한국현미경학회 1999 Applied microscopy Vol.29 No.4

기억저장매체로서 광디스크의 개발이 활발히 진행되고 있으며 최근의 레이저 기술의 발전, 제조기술의 발전에 따른 기억밀도의 증가로서 기존의 자기기록매체와 경쟁을 하고 있다. 기록밀도의 증대와 신뢰성의 향상을 위하여 다층박막 구조를 가지는 광디스크의 미세구조는 더욱 복잡하며 소형화되고 있다. 이종의 물질로 구성된 다층박막형 광디스크의 미세구조 관찰 및 분석을 위해서는 투과전자현미경과 같은 미소영역 분석법이 필수적이며 비교적 간단하고 신뢰성 높은 시편준비법의 확립이 선행되어야 한다. 본 연구에서는 투과전자현미경 분석을 위한 광디스크의 평면 및 단면시료 제작법을 제시하고 제조된 시편으로부터 얻어진 광디스크의 미세구조 분석결과를 보고한다. With increasing demand for fast and reliable, yet economical data storage devices, the role of optical disk technology is becoming more important. In recent years, advanced laser technology combined with new materials has given the competitive edge over the traditional magnetic memory devices both in memory capacity and reliability of data retrieval. Continuing effort is being put into developing smaller and more complex structures for optical disks to increase their memory density. Characterization of such multilayered structure requires not only high spatial resolution for observation but also laborious specimen preparation. In this paper, the method of preparing optical disk specimens for TEM characterization is described in detail. The microstructural features in optical disks observed by TEM are also discussed.

수렴성빔 전자회절법을 이용한 리오캐스팅시킨 과공정 Al-Si합금에서 실리콘초정의 격자상수 측정

이정일,김긍호,이호인,Lee, Jung-Ill,Kim, Gyeung-Ho,Lee, Ho-In 한국현미경학회 1995 Applied microscopy Vol.25 No.3

The morphological changes of primary solid particles as a function of process time on hypereutectic Al-15.5wt%Si alloy during semi-solid state processing with a shear rate of $200s^{-1}$ are studied. In this alloy, it was observed that primary Si crystals are fragmented at the early stage of stirring and morphologies of primary Si crystals change from faceted to spherical during isothermal shearing for 60 minutes. To understand the role of Al dissolved in the primary Si crystal by shear stress at high temperature, lattice parameters of the primary Si crystals are determined as a variation of high order Laue zone(HOLZ) line positions measured from convergent beam electron diffraction(CBED) pattern. The lattice parameter of the primary Si crystal in the rheocast Al-15.5wt%Si alloy shows tensile strain of about 5 times greater than that of the gravity casting. Increase of the lattice parameter by rheocasting is due to the increased amount of Al dissolved in the primary Si crystal accelerated by shear stress at high temperature. The amounts of solute Al in the primary Si crystal are measured quantitatively by EPMA method to confirm the CBED analysis.

초미립 $\textrm{La}^{3+}$-doped $\textrm{BaTiO}_3$세라믹스의 미세구조 및 유전특성

조지만,김병호,김긍호,제해준,이해원,김병국,Cho, Ji-Man,Kim, Byong-Ho,Kim, Gyeung-Ho,Je, Hae-June,Lee, Hae-Won,Kim, Byung-Kook 한국재료학회 1999 한국재료학회지 Vol.9 No.10

초미립 $BaTiO_3$분말을 출발물질로 하고 $\textrm{La}_{3+}$을 0~2 mol% 첨가하여 $1200~1400^{\circ}C$에서 소결하였을 때 $\textrm{La}_{3+}$을 첨가하지 않고 $1350^{\circ}C$ 이상에서 소결한 경우를 제외하고는 모두 110~240 nm의 평균입경을 갖는 초미립의 $\textrm{La}_{3+}$-doped $BaTiO_3$소결체를 얻을 수 있었다. 이 때, 평균입경이 240 nm에서 110 nm로 감소함에 따라 정방정비 (c/a), $90^{\circ}$ 분역의 부피분율, 상온 비유전율, 상전이온도($\textrm{T}_{c}$)에서의 최대 비유전율, $\textrm{T}_{c}$ 에서의 상전이 완만화도 등은 모두 감소하였다. 이와 같은 유전특성의 입경 의존성은 평균입경 감소에 따른 $90^{\circ}$ 분역 생성의 억제 및 그에 따른 내부응력의 영향으로 해석하였다. When the 0-2 mol% of $\textrm{La}_{3+}$ were added to the nanocrystalline $BaTiO_3$ powders and sintered at $1200~1400^{\circ}C$, the nanocrystailine $BaTiO_3$ ceramics having the average grain size of 110-240 nm were obtained except for when no $\textrm{La}_{3+}$ was added and sintered at > $1350^{\circ}C$. As the average grain size decreased from 240 nm to 110 nm, the tetragonality (c/a) and volume fraction of the $90^{\circ}$ domain decreased, and all the properties such as relative dielectric constant at room temperature, maximum relative dielectric constant at the temperature of phase transformation $\textrm{T}_{c}$ and diffuseness of phase transformation at $\textrm{T}_{c}$ also decreased. The results were attributed to the internal stress induced by inhibition of the $90^{\circ}$ domain formation in the case of finer grain size.

Al-6.2wt.%Si 합금의 등온교반시간에 따른 미세조직변화

이정일,박지호,김긍호,이호인 ( Jung Ill Lee,Ji Ho Park,Gyeung Ho Kim,Ho In Lee ) 한국주조공학회 1995 한국주조공학회지 Vol.15 No.5

N/A The microstructural evolution with isothermal stirring during semi-solid state processing of hypoeutectic Al-6.2wt%Si alloy was studied. Substructure of the individual primary solid particle in the slurry was investigated through transmission electron microscopy(TEM). Formation of subgrain boundaries on the rheocast Al-6.2wt%Si alloy is observed and the misorientation between the grains is shown typically under 2 degrees by analyzing selected area diffraction (SAD) and convergent beam electron diffraction (CBED) patterns. The existence of high angle grain boundaries are also observed in the alloy. Based upon these observations, mechanisms for the primary particles fragmentation are considered. With isothermal stirring, the dislocation density increases, and the evolution of dislocation cell structure takes place, which is interpreted as a process of achieving uniform deformation by dynamic recovery under applied shear stress.