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LTCC 기판재료 응용을 위한 다양한 충전제 함유 CaO-Al<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub> 유리복합체 연구
김관수,장호순,신현호,김인태,김신,한용현,윤상옥,Kim, Kwan-Soo,Jang, Ho-Soon,Shin, Hyun-Ho,Kim, In-Tae,Kim, Shin,Han, Yong-Hyun,Yoon, Sang-Ok 한국세라믹학회 2009 한국세라믹학회지 Vol.46 No.3
Influences of ceramic filler types and dose on the sintering, phase evolution, and dielectric properties of ceramic/CaO-$Al_2O_3-SiO_2$ glass composites were investigated. All of the specimens were sintered at $900^{\circ}C$ for 2 h, which conditions are required by the lowtemperature co-firing ceramic (LTCC) technology. Ceramic fillers of $Al_2O_3,\;SiO_2$, kaolin, and wollastonite were used. The addition of $Al_2O_3$ filler yielded the crystalline phases of alumina and wollastonite, and the densification over 95% of the relative density was achieved up to 50 wt% addition of the filler. For the cases of the fillers of $SiO_2$, kaolin, and wollastonite, crystalline phases of quartz, mullite, and wollastonite formed, while the densification decreased monotonically with the filler addition. In overall, all the investigated fillers with 10 wt% addition resulted in a reasonable sintering (over 95 %) and low dielectric constants (less than 6), demonstrating the feasibility of the investigated composites for application to a LTCC substrate material with a low dielectric constant.
알루미나-아연붕규산염 유리를 이용한 저온 소결 다공성 세라믹스의 제조 및 특성
김관수,송기영,박상엽,김신,김성진,윤상옥,Kim, Kwan-Soo,Song, Ki-Young,Park, Sang-Yeup,Kim, Shin,Kim, Sung-Jin,Yoon, Sang-Ok 한국세라믹학회 2009 한국세라믹학회지 Vol.46 No.6
The low-temperature preparation of porous ceramics was carried out using mixtures of alumina-zinc borosilicate (ZBS) glass. The compositions of alumina-ZBS glass mixture with PMMA pore-former were unfortunately densified. Because PMMA was evaporated below the softening point of ZBS glass ($588{^{\circ}C}$), the densification through the pore-filling caused by the capillary force might occur. Howerver, those with carbon possessed pores where carbon was evaporated above the softening point. The porous ceramic having 35% porosity was successively fabricated by the low-temperature sintering process below $900{^{\circ}C}$ using 45 vol% of alumina, 45 vol% ZBS of glass, and 10 vol% of carbon as starting materials.
강황 (Curcuma longa L.) 색소의 정량 및 안정성
김관수,정명근,박시형,Kim Kwan-Su,Choung Myoung-Gun,Park Si-Hyung 한국작물학회 2005 Korean journal of crop science Vol.50 No.suppl1
강황 (Curcuma longa L.) 색소의 curcuminoid 성분인 curcumin (CUR), demethoxycurcumin (DEM), bisdemethoxy-curcumin (BIS)의 정량분석을 위해 유의성있는 검량선$(r^2=0.9999**)$을 작성하였다. 사용된 HPLC는 역상칼럼을 장착하고 420nm의 UV 검출조건, 그리고 이동상으로 acetonitrile: $0.1\%$ acetic acid /water의 50 : 50 혼합용액을 이용하는 조건으로 분석조건이 확립되었다. 국내 6개 지역에서 재배된 강황들의 색소성분 함량분석 결과, CUR가 91.6mg/g으로 가장 높았으며 DEM은 56.9 mg/g이고 BIS는 23.0 mg/g으로 가장 낮게 나타났으며 총량은 평균 171.5 mg/g이었다. 강황 색소추출물의 저장시기별 색소성분의 함량 변화를 조사한 결과 $-20^{\circ}C$ 냉동저장은 거의 손실이 없었으나 상온저장은 60일 이후 급격한 감소율을 보였다. 저장 90일째의 색소성분은 암조건에서 약 $50\%$, 명조건에서 약 $30\%$만이 남아 있어 curcuminoid색소성분은 빛과 온도에 의해 분해가 촉진되는 것을 알 수 있었다. Three curcuminoids [curcumin (CUR), demethoxycurcumin(DEM), bisdemethoxycurcu in (BIS)] are major yellow pigments in turmleric (Curcuma longa L.) root. Contents of curcuminoids in turmeric roots collected from 6 locations were analyzed using, high performance liquid chromatography (HPLC) equipped with reversed-phase column, an UV-Vis detector at 420nm, and eluted with a mixture of acetonitrile: $0.1\%$ acetic acid in water (50 : 50, v/v) as mobile phase. The stability of curcuminoid pigments in $80\%$ methanol extract solution were investigated during storage in a freezer at $-20^{\circ}C$, room temperature in the dark, and light condition. Calibration curves for the determination of curcuminoids were made with significant linearity $(r^2=0.999**)$. Average content of total curcuminoids was 171.5 mg/g, with 91.6 mg/g of CUR, 56.9 mg/g of DEM, and 23.0 mg/g of BIS. Amount of curcuminoids during storage in a freezer was almost not changed while those in room temperature wert reduced and rapid degradation appeared after 60 days. Within 90 days, about $50\%$ curcuminoid decreased in the dark and about $70\%$ in the light condition, indicating the decomposition of curcuminoid pigments followed under light and heat.
Ultrathin-body SOI MOSFETs에서 면방향에 따른 정공의 이동도 증가
김관수,조원주,Kim, Kwan-Su,Cho, Won-Ju 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.11
We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.
213-nm Solid-State Laser 굴절교정각막절제술 시 각막표면 수분의 영향
김관수,최철영,차흥원,Kwan Soo Kim,Chul Young Choi,Hungwon Tchah 대한안과학회 2008 대한안과학회지 Vol.49 No.11
Purpose: To investigate the effect of surface fluid on the ablation rate and efficacy of 213-nm solid-state laser during photorefractive keratectomy (PRK). Methods: Twelve rabbits (24 eyes) underwent myopic PRK for the correction of 10 diopters using 213-nm solid-state laser. Photoablation was performed with removal of corneal surface fluid using the Weckcel® sponge every 5 seconds in one eye and without removal of corneal surface fluid in the control eye. The mean central corneal thickness (CCT) was evaluated preoperatively, and at 1 week, 4 weeks postoperatively. Results: The mean CCT of group 1 (with removal of corneal surface fluid) were 361.3±13.9 μm preoperatively and 321.4±18.5 μm at 4 weeks postoperatively. The mean CCT of group 2 (without removal of surface fluid) were 358.7±8.9 μm preoperatively and 338.4±12.0 μm at 4 weeks postoperatively. The mean ablation depths were 39.8±7.4 μm in group 1 and 20.3±5.8 μm in group 2 at 4 weeks postoperatively (p<0.05). Conclusions: Induced corneal surface fluid during PRK may influence the ablation efficacy and accuracy of solid-state laser. This result should be considered in clinical trialswith 213-nm solid-state laser, especially in high myopes. J Korean Ophthalmol Soc 2008;49(11):1723-1728
김관수,최철영,장혜란,Kwan Soo Kim,M,D,Chul Young Choi,M,D,Hae Ran Chang,M,D 대한안과학회 2008 대한안과학회지 Vol.49 No.12
Purpose: A number of patients with accommodative esotropia who were initially well controlled with their optical correction will deteriorate. This study aims to examine the cautious clinical features of patients with accommodative esotropia during follow-up period by obtaining the prevalence and the predictive factors of deterioration in accommodative esotropia. Methods: The records of 89 patients with accommodative esotropia whose eyes were aligned with optical correction (including bifocals) to 8 prism diopters (PD) of esotropia or less were reviewed. All patients were followed for a period of at least 2 years. The patients whose alignment was increased to 10PD of esotropia or greater during the follow-up period were included into the deteriorated group. We obtained the rate of deterioration and compared the clinical features of the deteriorated and controlled group. Results: The mean follow-up period was 64.1±29.3 months. Seven (7.8%) of 89 patients was deteriorated. The mean interval of deterioration after initial optical correction was 41.8±26.9 months. The stereopsis was significantly worse in the deteriorated group p=0.024). The frequency of high AC/A ratio was also significantly higher in the deteriorated group (p=0.003). Conclusions: This study indicates that accommodative esotropia with high AC/A ratio or worse sensory status has an increased likelihood of deterioration.
높은 이동도 특성을 가지는 Strained-Si-on-insulator (sSOI) MOSFETs
김관수,조원주,Kim, Kwan-Su,Cho, Won-Ju 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8
We investigated the characteristics of Strained-Si-on-Insulator (sSOI) MOSFETs with 0.7% tensile strain. The sSOI MOSFETs have superior subthreshold swing under 70 mV/dec and output current. Especially, the electron and hole were increased in sSOI MOSFET. The electron and hole mobility in sSOI MOSFET were 286$cm^2/Vs$ and 151$cm^2/Vs$, respectively. The carrier mobility enhancement is due to the subband splitting by 0.7% tensile strain.