http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
권영해,조훈영,홍치유 동국대학교 자연과학연구원 1995 자연과학연구 논문집 Vol.15 No.-
The oxidation and pressure effects of electrochemically etched porous Si have been investigated by photoluminescence(PL) and Raman spectroscopy. The porous Si sample was etched with a current density of 50mA/㎠ for 20 min, and shows a PL signal at 710 nm and a Raman peak at 517 cm. Rapid-thermal-annealing of the as-etched sample at 400℃ shows a rapid drop in the PL intensity. On the other hand, the intensity of the rapid-thermal-oxidized sample remains constant in the temperature range from 600℃ to 800℃. The Raman signal of the oxidized sample also showed thermal stability. The reverse leakage current of the oxidized porous Si was reduced to 100 times in comparision to that of as-grown porous Si. The PL peak position of the oxidized porous Si shows the shifts to 705 nm and the Raman peak shifts to a higher energy, closer that of the bulk polycrystalline Si. This can be explained in terms of the stress on the Si columnar structure. The initial tensile stress induced by the etching process is reduced by the compressive stres caused by the formation of oxides (SiO₂) in the gaps. It is supposed that this can cause the blue shift in the PL spectrum and the recovery of the Raman peak position.
이연환,권영해 東國大學校 1997 東國論叢 Vol.36 No.-
We present the existence of deep level defects in the band gap of porous silicon by the photoinduced current transient spectroscopy (PICTS) technique combined with the results of thermovoltage and conductivity measurements. The defects are found to exhibit deep donor levels in the upper part of the band gap. It is found that the thermal emission and ionization energies of the defect increase in the ranges from 0.3 eV to 0.86 eV below the conduction band edge as the porosity increases indicating that the defects play a role of a killer of luminescence. We suggest a configuration coordinate diagram to explain the observed defects uniquely.