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Development of Water Assisted Solid State Reaction for the Ceramic Materials
Toda, Kenji,Kim, Sun Woog,Hasegawa, Takuya,Watanabe, Mizuki,Kaneko, Tatsuro,Toda, Ayano,Yamanashi, Ryota,Kumagai, Shota,Muto, Masaru,Itadani, Atsushi,Sato, Mineo,Uematsu, Kazuyoshi,Ishigaki, Tadashi,K Trans Tech Publications, Ltd. 2017 Key Engineering Materials Vol.751 No.-
<P>We report a novel soft chemical synthesis method, water assisted solid state reaction (WASSR) method. This method is very simple and can synthesize many ceramic materials just by storing or mixing raw materials added a small amount of water in a reactor at low temperature below 373 K. For example, well-crystalline SrMoO4 was obtained using the WASSR method.</P>
Measurements of charge exchange neutral particles in Heliotron J
masashi Kaneko,F. Sano,H. Okada,K. Hanatani,K. Nagasaki,K. Kondo,S. Kobayashi,S. Murakami,T. Mizuuchi,Y. Suzuki,Y. Nakamura 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
The ion behavior in Heliotron J plasmas is investigated through measurements of the ion energy distribution function, which is measured with a charge-exchange neutral particle analyzer system. The bulk ion temperature is estimated from the measured energy spectrum. In NBI heated plasma, the pitch angle distribution of energy spectra is measured. Dependence of the high energy tail and bulk ion temperature of injection power is investigated in an ion-cyclotron range of frequency heating experiment.)
Characteristics of Carrier-generated Field-effect Transistors with Pentacene/Vanadium Pentoxide
M. Minagawa,K. Nakai,A. Baba,K. Shinbo,K. Kato,F. Kaneko,이천 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.51
In this paper, the driving mechanism of carrier-generated organic field-effect transistors (OFETs) with pentacene and vanadium pentoxide (V_2O_5) layers is discussed. In this study, large on-currents were observed in an OFET with a 35-nm V_2O_5 layer. Devices with aluminum (Al)/pentacene/V_2O_5/Al layer structures were also prepared. These devices exhibited a large current density in spite of their high carrier injection barriers between each layer and the Al electrodes. Moreover, new absorption bands corresponding to the radical cation absorption of pentacene were observed within the absorption spectrum of the pentacene and V_2O_5 mixed layers. It was inferred that the charge transfer (CT) complexes that formed at the interface between the pentacene and V_2O_5 layers were dissociated by the applied gate voltage and that the generated holes contributed to driving the OFETs.