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박혜숙,박기양,김영국,박규홍,박윤범,권혁천,박노경,백은정,황정연 한국수학교육학회 2004 수학교육 Vol.43 No.2
In this paper, we verified the effect and appropriateness of the scheme to cure the math. disliking disposition which is the cause of underachievement in learning. We choose 3 schools as the subject of experiment for this research. Each experiment experiment class consists of 27~30 students(underachievers) whose final test results of 1st school year in the middle school are 30~60 points. In this case, we also select some middle level students whose test results are more than 60 points for the normal experimental condition. For this research, we developed the suitable test materials to cure the mathematics disliking disposition of underachievers. We applied those test materials to the experiment schools during 2.5 months and we analysed the variation of disliking disposition, the variation of math. dislike students' number and the cure rate of the math. disliking disposition. From the results of this experimental study, we find that the factors of teacher and math recognition environment have only the significant difference of math. disliking disposition between experiment class and comparison class under the 5% significance level in one middle school. We understand that this results caused by teachers' careful advice and guidance in that middle school. We also find that the number of student who dislike mathematics decreased in two middle schools. Furthermore 50% of math. disliking dispositions are cured for 9 disliking factors in the lower grade group(the group of underachievers) and as a whole, we can see that 50% of cure rate for the 7 factors of math. disliking in two middle schools. So we can understand that the experiment of our research was performed successfully in two middle schools. In this research, we find out that the scheme to cure the disliking dispositions for the factors of math. disliking depends on the factors of teacher who take charge of cure. So teachers must take interest in and must have careful concem to students and their math. disliking.
두개골의 3차원 영상 분석을 위한 전산화단층촬영 방법의 비교 : 상층 두께가 3차원 영상의 계측에 미치는 영향
정호걸,김기덕,박혁,김동욱,정해조,김희중,유선국,김용욱,박창서 대한구강악안면방사선학회 2004 Imaging Science in Dentistry Vol.34 No.3
Purpose : To evaluate the quantitative accuracy of three-dimensional (3D) images by means of comparing distance measurements on the 3D images with direct measurements of dry human skull according to slice thickness and scanning modes. Materials and Mathods : An observer directly measured the distance of 21 line items between 12 orthodontic landmarks on the skull surface using a digital vernier caliper and each was repeated five times. The dry human skull was scanned with a Helical CT with various slice thickness (3, 5, 7 mm) and acquisition modes (Conventional and Helical). The same observer measured corresponding distance of the same items on reconstructed 3D images with the internal program of V-works 4.0 (Cybermed Inc., Seoul, Korea). The quantitative accuracy of distance measurements were statistically evaluated with Wilcoxons’ two-sample test. Results : 11 line items in Conventional 3 mm, 8 in Helical 3mm, 11 in Conventional 5 mm, 10 in Helical 5 mm, 5 in Conventional 7 mm and 9 in Helical 7 mm showed no statistically significant difference. Average difference between direct measurements and measurements on 3D CT images was within 2 mm in 19 line items of Conventional 3 mm, 20 of Helical 3 mm, 15 of Conventional 5 mm, 18 of Helical 5 mm, 11 of Conventional 7mm and 16 of Helical 7 mm. Conclusion : Considering image quality and patient’s exposure time, scanning protocol of Helical 5 mm is recommended for 3D image analysis of the skull in CT.
고전압 비휘발성 메모리 Programming Pin ESD 개선방안에 관한 연구
권순엽(Soon-Yeob Kwon),임경식(Kyoung-Sik Im),고재혁(Jae-Hyok Ko),정신영(Shin-Young Chung),김요정(Yo-Joung Kim),박무근(Moo-Keun Park),이경진(Kyoung-Jin Lee),공배선(Bai-Sun Kong) 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11
Ths paper presents a method of improving the ESD characteristic of high voltage non-volatile memory (NVM) programming pin in a 130㎚/30V technology. Suggested scheme can provide not only a major current discharge path to protect the internal circuit from ESD damage but also a voltage clamping function to prevent the soft error of programmed data during an ESD event. Resistance value of 120 ㏀ and capacitance value of 6.8㎊ were chosen for maximizing the improvement of voltage characteristic and delay time, while minimizing the area overhead. The proposed scheme has been validated by TCAD simulation and actuality silicone.