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Hepatogenous diabetes in cirrhosis is related to portal pressure and variceal hemorrhage.
Jeon, Hyo Keun,Kim, Moon Young,Baik, Soon Koo,Park, Hong Jun,Choi, Hoon,Park, So Yeon,Kim, Bo Ra,Hong, Jin Heon,Jo, Ki Won,Shin, Seung Yong,Kim, Jung Min,Kim, Jae Woo,Kim, Hyun Soo,Kwon, Sang Ok,Kim, Plenum Pub. Corp.] 2013 Digestive diseases and sciences Vol.58 No.11
<P>The clinical impact and complications of hepatogenous diabetes (HD) on cirrhosis have not been elucidated. This study aimed to evaluate the relationship of HD with portal hypertension (PHT) and variceal hemorrhage and to assess the prevalence of HD.</P>
Case Reports : A Case of Pulmonary Vein Tumor Presenting as a Left Atrial Mass
Hyo Keun Jeon,Jung Ho Kim,Gwon Hyun Cho,Sun Young Kyung,Sung Hwan Jeong,Wook Jin Chung,Na Rae Kim 대한내과학회 2007 The Korean Journal of Internal Medicine Vol.22 No.1
Primary cardiac tumors are extremely rare and can originate within the heart or be the result of tumor spread from other sites. We report a female patient with a pulmonary vein tumor extending into the left atrium that had a suspicious primary malignant origin with a sacral metastatic carcinoma. The patient was admitted complaining of pain in her buttock area as a result of a sacral tumor. It was believed that the sacral tumor was a metastasis from the imaging study and clinical manifestation. The primary malignant origin was evaluated. The chest CT showed a left atrium thrombus-like lesion without a pulmonary abnormality. After a transesophageal echocardiogram, the patient was diagnosed with a pulmonary vein tumor extending to the left atrium. The patient was given palliative radiotherapy for the sacral pain. Initially, the clinical impression was a metastatic sacral tumor with a thromboembolism of the left atrium. However, this patient was finally diagnosed with a pulmonary vein tumor with a left atrium extension by a transesophageal echocardiogram.
Keun Hee Chung,Hyo Jeong Hwang,Kyung Ok Shin,Woo Min Jeon,Kyung Soon Choi 한국영양학회 2013 Nutrition Research and Practice Vol.7 No.4
The aim of this study was to examine the effects of perilla oil as well as several vegetable oils, including flaxseed oil, canola oil, and rice bran oil on plasma levels of cardioprotective (n-3) polyunsaturated fatty acids in mice by feeding each vegetable oil for a period of eight weeks. Concentrations of docosapentaenoic acid (DHA) and eicosapentaenoic acid (EPA), fish-based (n-3) polyunsaturated fatty acids, showed an increase in the plasma of mice fed perilla and flaxseed oils compared to those of mice in the control group (P < 0.05), whereas rice bran and canola oils did not alter plasma DPA and EPA concentrations. Arachidonic acid concentration was increased by feeding rice bran oil (P < 0.05), but not canola, flaxseed, or perilla oil. In addition, oleic acid, linoleic acid, and docosahexaenoic acid concentrations were altered by feeding dietary rice bran, canola, perilla, and flaxseed oils. Findings of this study showed that perilla oil, similar to flaxseed oil, is cardioprotective and could be used as an alternative to fish oil or even flaxseed oil in animal models.
Jeon, Woojin,Yoo, Sijung,Kim, Hyo Kyeom,Lee, Woongkyu,An, Cheol Hyun,Chung, Min Jung,Cho, Cheol Jin,Kim, Seong Keun,Hwang, Cheol Seong American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.23
<P>The effects of Pt and RuO<SUB>2</SUB> top electrodes on the electrical properties of capacitors with Al-doped TiO<SUB>2</SUB> (ATO) films grown on the RuO<SUB>2</SUB> bottom electrode by an atomic layer deposition method were examined. The rutile phase ATO films with high bulk dielectric constant (>80) were well-grown because of the local epitaxial relationship with the rutile structured RuO<SUB>2</SUB> bottom electrode. However, the interface between top electrode and ATO was damaged during the sputtering process of the top electrode, resulting in the decrease in the dielectric constant. Postmetallization annealing at 400 °C was performed to mitigate the sputtering damage. During the postmetallization annealing, the ATO layer near the RuO<SUB>2</SUB> top electrode/ATO interface was well-crystallized because of the structural compatibility between RuO<SUB>2</SUB> and rutile ATO, while the ATO layer near the Pt top electrode/ATO interface still exhibited an amorphous-like structure. Despite the same thickness of the ATO films, therefore, the capacitors with RuO<SUB>2</SUB> top electrodes showed higher capacitance compared to the capacitors with Pt top electrodes. Eventually, an extremely low equivalent oxide thickness of 0.37 nm with low enough leakage current density (<1 × 10<SUP>–7</SUP> A/cm<SUP>2</SUP> at 0.8 V) and physical thickness of 8.7 nm for the next-generation dynamic random access memory was achieved from ATO films with RuO<SUB>2</SUB> top electrodes.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-23/am506677e/production/images/medium/am-2014-06677e_0006.gif'></P>
Park, Hyo-Yeol,Jeon, Kyoung-Nam,Kim, Keun-Joo The Korean Institute of Electrical and Electronic 2010 Transactions on Electrical and Electronic Material Vol.11 No.1
The authors investigated the photoluminescence (PL) and the electron paramagnetic resonance (EPR) from an magnesium (Mg)-doped GaN thin film with a delta-doped layer. The regularly doped sample shows a PL peak at 2.776 eV for the as-grown sample, and the peak shifts to 2.904 eV and increases in intensity for the annealed sample. The delta-doped sample also shows the same PL peak as does the regularly doped sample. However, only the annealed delta-doped layer shows a sharp EPR with a small isotropic Lande g-factor, $g_{II}$, of 2.029. This resonance is attributed to the delta-doped layer, which forms a hole-bound Mg-N atomic structure instead of the $Mg_{Ga}-V_N$ defect complex, indicating that the delta-doped sample was not optically activated to form PL centers but was instead electrically activated to form a hole-bound state.
Kim, Hyo Yeon,Nam, Ji Hyeun,George, Sheby Mary,Park, Jin-Seong,Park, Bo Keun,Kim, Gun Hwan,Jeon, Dong Ju,Chung, Taek-Mo,Han, Jeong Hwan Elsevier 2019 CERAMICS INTERNATIONAL Vol.45 No.4
<P><B>Abstract</B></P> <P>Atomic layer deposition (ALD) of SnO and SnO<SUB>2</SUB> thin films was successfully demonstrated over a wide temperature range of 70–300 °C using a divalent Sn-precursor, bis(<I>N-</I>ethoxy-2,2-dimethyl propanamido)tin (Sn(edpa)<SUB>2</SUB>). The regulated growth of the SnO<SUB>2</SUB> and SnO films was realized by employing O<SUB>2</SUB>-plasma and H<SUB>2</SUB>O, respectively. Pure SnO<SUB>2</SUB> and SnO films were deposited with negligible C and N contents at all the growth temperatures, and the films exhibited polycrystalline and amorphous structures, respectively. The SnO<SUB>2</SUB> films presented a high transmittance of > 85% in the wavelength range of 400–700 nm and an indirect band gap of 3.6–4.0 eV; meanwhile, the SnO films exhibited a lower transmittance of > 60% and an indirect band gap of 2.9–3.0 eV. The SnO<SUB>2</SUB> films exhibited n-type semiconducting characteristics with carrier concentrations of 8.5 × 10<SUP>16</SUP>–1.2 × 10<SUP>20</SUP> cm<SUP>−3</SUP> and Hall mobilities of 2–26 cm<SUP>2</SUP>/V s. By employing an alternate ALD growth of SnO and SnO<SUB>2</SUB> films, SnO<SUB>2</SUB>/SnO multilayer structures were successfully fabricated at 120 °C. The in-situ quadrupole mass spectrometry analysis performed during ALD revealed that the oxidation of chemisorbed Sn-precursor occurs dominantly during the Sn(edpa)<SUB>2</SUB>/O<SUB>2</SUB>-plasma ALD process, resulting in the production of combustion by-products, whereas the Sn(edpa)<SUB>2</SUB>/H<SUB>2</SUB>O ALD process was governed by a ligand exchange reaction with the maintenance of the original oxidation state of Sn<SUP>2+</SUP>.</P>
전낙근(Jeon Rak-Keun),이상효(Lee Sang-Hyo),김재준(Kim Jae-Jun) 대한건축학회 2009 대한건축학회논문집 Vol.25 No.7
The change of housing demand can be judged from the fluctuation of Housing fund demand because construction market is more closely connected with financial market. Therefore the construction investment on buildings can be judged from the fluctuation of Housing fund demand because housing demand is closely connected with housing construction market. this paper attempts to analyze on the relation between housing fund demand and construction investment on buildings by using Vector Error Correction Model.